CHA5130
Ref. : DSCHA51303155 - 04 Jun 03
1/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
28-35 GHz Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5130 is a compact four-stage PHEMT
HPA MMIC designed for VSAT ground terminals
and other radio applications. It provides typically
28dBm nominal output power at 1dB gain
compression over the 28-35
GHz frequency
range, and 18dB small signal gain.
The backside of the chip is both RF and DC
grounds. This helps to simplify the assembly
process.
The circuit is manufactured with a 0.25m gate
length power PHEMT process on 70m
substrate, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form.
Main Features
Broadband performances : 28-35GHz
18dB
1 dB linear gain
28dBm output power at 1dB comp
Integrated output power detector
Chip size : 1.32 X 1.87 X 0.07mm
3
RF
I
n
RF
O
u
t
VG4
VG3
VD1
VD4
VD2
VD3
VG1
VG2
DET
Chip size 2.47mm
2
Main Characteristics
Tamb = +25C, Vd = 6V
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
28
35
GHz
G Small
signal
gain
17 18 dB
P1dB
CW output power at 1dB gain compression
27
28.5
dBm
Vd Drain
bias
voltage
6
V
Id Bias
current
700 1000 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
28
29
30
31
32
33
34
35
10
12
14
16
18
20
22
24
26
28
30
CHA5130 : V
d
=6V, I
d
=700 mA
G
a
i
n
(dB)
an
d
O
u
t
p
ut
Pow
e
r P
-1
d
B
(d
Bm
)
Frequency (GHz)
P
-1dB
Linear Gain
Typical in JIG test fixture measurements
28-35 GHz POWER AMPLIFIER
CHA5130
Ref. : DSCHA51303155 - 04 Jun 03
2/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical characteristics in JIG test fixture
Tamb = +25C, Vd = 6V, Id=700mA (typically Vg=-0.4V)
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
28
35
GHz
G
Small signal gain (1)
17
18
dB
G
Small signal gain flatness
1
dB
P1dB
CW output power at 1dB gain compression (1)
27
28.5
dBm
Psat
Saturated output power (1)
28
29.5
dBm
IP3 3
rd
order intercept point (1)
34
dBm
RLin
Input return loss (1)
-10
-8
dB
RLout
Output return loss (1)
-10
-8
dB
Is
Reverse Isolation (1)
35
dB
Vd Drain
bias
voltage
6
V
Vg
Gate
bias
voltage
-0.4 V
Id Bias
current
700 mA
(1)
These values are representative for CW JIG test fixture measurements, that are made with
bond wires at RF ports. The given values include the test fixture loss correction.
Absolute Maximum Ratings
(2)
Tamb = +25C
Symbol Parameter
Values
Unit
Vd
Drain bias voltage
6.5
V
Id Bias
current
1000
mA
Vg
Min. and max. gate bias voltage
-2.5 ~ 0
V
Pin
Maximum peak input power overdrive (3)
+15
dBm
Top
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(2) Operation of this device above anyone of these parameters may cause permanent damage.
(3) Duration < 1s.
28-35 GHz POWER AMPLIFIER
CHA5130
Ref. : DSCHA51303155 - 04 Jun 03
3/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical CW performance in JIG test fixture @ Tamb=25C
25
30
35
40
-25
-20
-15
-10
-5
0
5
10
15
20
S
11
S
22
Jig CHA5130 V
d
=6 V, I
d
=700 mA
S Pa
r
a
m
e
te
rs
(d
B)
Frequency (GHz)
S
21
Typical in JIG test fixture S-parameters measurements
0
1
2
3
4
5
6
7
8
9 10 11 12 13
10
15
20
25
30
CHA5130: V
d
=6V, I
d
=700 mA
Frequency: 28 ~ 35 GHz
Ga
i
n
(d
B
)
a
n
d Ou
tp
u
t
p
o
w
e
r
(d
B
m
)
Input Power (dBm)
Gain
P
out
Typical CW P
out
versus P
in
characteristics
28
29
30
31
32
33
34
35
10
12
14
16
18
20
22
24
26
28
30
CHA5130 : V
d
=6V, I
d
=700 mA
Ga
in
(d
B
)
an
d
Out
pu
t P
o
w
e
r P
-
1dB
(d
B
m
)
Frequency (GHz)
P
-1dB
Linear Gain
CW P
-1dB
and linear gain versus frequency
28-35 GHz POWER AMPLIFIER
CHA5130
Ref. : DSCHA51303155 - 04 Jun 03
4/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
28
29
30
31
32
33
34
35
20
25
30
35
40
CHA5130: V
d
=6V, I
d
=660 mA
T= +25 C
IP
3
(d
B
m
)
Frequency (GHz)
Typical CW IP3 versus frequency at optimum bias for linearity (V
d
=6.0V, I
d
=660 mA)
10
11
12
13
14
15
16
17
18
19
20
30
35
40
45
50
55
60
C/I3 @ +85C
C/I3 @ +25C
CHA5130: V
d
=6V, I
d
=660 mA
Frequency: 30 GHz 5 MHz
C
/I3
(
d
B
c
)
2-tone Output Power (dBm)
C/I3 @ -40C
IP3 @ -40C
IP3 @ +25C
IP3 @ +85C
C/I3 and IP3 over P
out
and temperature at 30 GHz and optimum bias for linearity (V
d
=6.0V, I
d
=660 mA)
-10
-5
0
5
10
15
20
25
30
1
10
100
1000
D
e
t
e
c
t
e
d
V
o
l
t
ag
e (m
V
)
Output Power (dBm)
Output power detector characteristic @ 30 GHz, V
d
=6.0V, I
d
=700 mA)
28-35 GHz POWER AMPLIFIER
CHA5130
Ref. : DSCHA51303155 - 04 Jun 03
5/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Recommended Chip Assembly
50-Ohm line
50-Ohm line
RF In
RF Out
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
10 nF
10 nF
Detected voltage
To DRAIN voltage (Vd)
+ 1 F SMD cap.
to ground
To GATE control voltage (Vg)
+ 1 F SMD cap.
to ground
VD1
VD2 VD3
VD4
VG2
VG3
VG4
DET
VG1
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