CHA5292a
Ref. : DSCHA52922149 - 29-May-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
37-40GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5292a is a high gain four-stage
monolithic medium power amplifier. It is
designed for a wide range of applications, from
military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.15m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Performances : 37-40GHz
24dBm output power @ 1dB comp. gain
24 dB
1dB gain
DC power consumption, 500mA @ 3.5V
Chip size : 3.43 x 1.44 x 0.07 mm
Vd1 Vd2 Vd3 Vd4
Vg1 Vg2 Vg3 Vg4
IN
OUT
Typical on jig Measurements
Main Characteristics
Tamb. = 25C
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
37
40
GHz
G
Small signal gain
24
dB
P1dB
Output power at 1dB gain compression
24
dBm
Id Bias
current
500
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
30
31
32
33
34
35
36
37
38
39
40
Frequency (GHz)
S21 (dB)
S11 (dB)
S22 (dB)
CHA5292a
37-40GHz Medium Power Amplifier
Ref. : DSCHA52922149 - 29-May-02
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vd = 3.5V Id =500mA
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range (1)
37
40
GHz
G
Small signal gain (1)
24
dB
G
Small signal gain flatness (1)
1
dB
Is
Reverse isolation
35
dB
P1dB
Pulsed output power at 1dB compression (1)
24
dBm
P03
Output power at 3dB gain compression (1)
26
dBm
VSWRin Input VSWR (2)
3:1
VSWRout Output VSWR (2)
3.5:1
Tj
Junction temperature for 80C backside
160
C
Id
Bias current @ small signal
500
650
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vd
Maximum Drain bias voltage with Pin max=0dBm
+4.0
V
Id
Drain bias current
750
mA
Vg
Gate bias voltage
-2 to +0.4
V
Ig
Gate bias current
-1.8 to +1.8
mA
Vdg
Maximum drain to gate voltage (Vd - Vg)
+6.0
V
Pin
Maximum input power overdrive (2)
+3.0
dBm
Tch
Maximum channel temperature
+175
C
Ta
Operating temperature range
-40 to +80
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
37-40GHz Medium Power Amplifier
CHA5292a
Ref. : DSCHA52922149 - 29-May-02
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Jig Measurements
Bias conditions: Vd=3.5V, Vg tuned for Id = 500mA
Linear Gain & Return Losses versus frequency (including 1dB losses)
Linear Gain & Output power at 1dB compression versus frequency
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
30
31
32
33
34
35
36
37
38
39
40
Frequency (GHz)
S21 (dB)
S11 (dB)
S22 (dB)
15
16
17
18
19
20
21
22
23
24
25
35
36
37
38
39
40
Frequence (GHz)
20
21
22
23
24
25
26
27
28
29
30
P-1dB-400mA
P-1dB-500mA
Linear Gain -400mA
Linear Gain-500mA
CHA5292a
37-40GHz Medium Power Amplifier
Ref. : DSCHA52922149 - 29-May-02
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
C/I3 versus total output power (
F =10MHz)
30
34
38
42
46
50
54
58
62
0
2
4
6
8
10
12
14
16
Pout (dBm)
37GHz
38GHz
39GHz
40GHz
3.5V, 500mA
C/I3 (dBc)
IP3 (dBm)
30
34
38
42
46
50
54
58
62
0
2
4
6
8
10
12
14
16
Pout (dBm)
37GHz
38GHz
39GHz
40GHz
3.5V, 400mA
C/I3 (dBc)
IP3 (dBm)
37-40GHz Medium Power Amplifier
CHA5292a
Ref. : DSCHA52922149 - 29-May-02
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
120pF
120pF
120pF
120pF
120pF
120pF
120pF
120pF
10nF
10nF
10nF
To Vd1,2 DC Drain Supply
To Vd3,4 DC Drain Supply
To Vg1,2,3,4 DC Gate Supply Feed
IN
OUT
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 70m. All dimensions are in micrometers )
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