CHA5293a
Ref. : DSCHA52932123 -03-May-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
17-24GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5293a is a high gain three-stage
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial communication systems.
The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Performances : 17-24GHz
30dBm output power @ 1dB comp. gain
17 dB
1dB gain
DC power consumption, 800mA @ 6V
Chip size : 4.01 x 2.52 x 0.05 mm
Vd1 Vd2 Vg3 Vd3
Vg1,2 Vd2 Vg3 Vd3
-20
-15
-10
-5
0
5
10
15
20
25
12
14
16
18
20
22
24
26
28
Frequency (GHz)
Gai
n
& RL
o
ss (d
B)
S11
S22
Typical on jig Measurements
Main Characteristics
Tamb. = 25C
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
17
24
GHz
G
Small signal gain
16
17
dB
P1dB
Output power at 1dB gain compression
29
30
dBm
Id Bias
current
800
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHA5293a
17-24GHz High Power Amplifier
Ref. : DSCHA52932123 -03-May-02
2/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vd = 6V Id #800mA
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range (1)
17
24
GHz
G
Small signal gain (1)
16
17
dB
G
Small signal gain flatness (1)
1
dB
Is
Reverse isolation
50
dB
P1dB
Pulsed output power at 1dB compression (1)
29
30
dBm
P03
Output power at 3dB gain compression (1)
32
dBm
IP3 3
rd
order intercept point (2)
42
dBm
PAE
Power added efficiency at 1dB comp.
20
%
VSWRin Input VSWR (2)
3:1
VSWRout Output VSWR (2)
3:1
Tj
Junction temperature for 80C backside
155
C
Id
Bias current @ small signal
800
1000
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vd
Maximum drain bias voltage with Pin max=12dBm
6.25
V
Id
Maximum drain bias current
1450
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Ig
Gate bias current
-5 to +5
mA
Vgd
Minimum negative gate drain voltage ( Vg - Vd)
-8
V
Pin
Maximum input power overdrive (2)
15
dBm
Tch
Maximum channel temperature
175
C
Ta
Operating temperature range
-40 to +80
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
17-24GHz High Power Amplifier
CHA5293a
Ref. : DSCHA52932123 -03-May-02
3/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Jig Measurements
( including 1dB loss for the gain & 0.5dBm for the power)
Bias conditions: Vd=6V, Vg tuned for Id = 800mA
-20
-15
-10
-5
0
5
10
15
20
25
12
14
16
18
20
22
24
26
28
Frequency (GHz)
Gain & RLoss (
d
B)
S11
S22
Linear Gain & Return Losses versus frequency
Output power versus frequency & Drain current @ 20GHz
10
11
12
13
14
15
16
17
18
19
20
14
16
18
20
22
24
26
28
30
32
Output Power (dBm)
Gain (dB)
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
16 GHz
18 GHz
20 GHz
22 GHz
24GHz
Srie2
Drain current (mA) @ 20GHz
CHA5293a
17-24GHz High Power Amplifier
Ref. : DSCHA52932123 -03-May-02
4/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
30
34
38
42
46
50
54
58
62
66
70
74
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
C/ I3 (dBc)
IP3 (dBm)
F=18GHz
F=10MHz
C/I3 & IP3 versus total output power @ 18GHz
30
34
38
42
46
50
54
58
62
66
70
74
78
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
C/ I3 (dBc)
IP3 (dBm)
F=20GHz
F=10MHz
C/I3 & IP3 versus total output power @ 20GHz
17-24GHz High Power Amplifier
CHA5293a
Ref. : DSCHA52932123 -03-May-02
5/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
30
34
38
42
46
50
54
58
62
66
70
74
78
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
C/ I3 (dBc)
IP3 (dBm)
F=21.5GHz
F=10MHz
C/I3 & IP3 versus total output power @ 21.5GHz
30
34
38
42
46
50
54
58
62
66
70
74
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
C/ I3 (dBc)
IP3 (dBm)
F=23.5GHz
F=10MHz
C/I3 & IP3 versus total output power @ 23.5GHz
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