CHA5296
Ref. : DSCHA52962147 - 27-May-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
27-30GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5296 is a high gain three-stage
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial communication systems.
The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process on 50m substrate thickness, 0.25m
gate length, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form.
Main Features
Performances : 27-30GHz
29dBm output power @ 1dB comp. gain
15 dB
1dB gain
DC power consumption, 850mA @ 6V
Chip size : 3.80 x 2.52 x 0.05 mm
-20
-15
-10
-5
0
5
10
15
20
20
22
24
26
28
30
32
34
36
Frequency (GHz)
Gai
n
& RLosses (dB)
S22
S11
Typical on jig Measurements
Main Characteristics
Tamb. = 25C
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
27
30
GHz
G
Small signal gain
14
15
dB
P1dB
Output power at 1dB gain compression
28
29
dBm
Id Bias
current
850
1000
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHA5296
27-30GHz High Power Amplifier
Ref. : DSCHA52962147 - 27-May-02
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vd = 6V Id #900mA
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range (1)
27
30
GHz
G
Small signal gain (1)
14
15
dB
G
Small signal gain flatness (1)
1
dB
Is
Reverse isolation
50
dB
P1dB
Pulsed output power at 1dB compression (1)
28
29
dBm
P03
Output power at 3dB gain compression (1)
29
30
dBm
IP3 3
rd
order intercept point (2)
41
dBm
PAE
Power added efficiency at Psat
12
16
%
VSWRin Input VSWR (2)
5:1
VSWRout Output VSWR (2)
2.5:1
Tj
Junction temperature for 80C backside
170
C
Id
Bias current @ small signal
850
1000
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vd
Drain bias voltage
6.25
V
Id
Drain bias current
1450
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Vgd
Negative gate drain voltage ( = Vg - Vd)
-8
V
Pin
Maximum peak input power overdrive (2)
+18
dBm
Ta
Operating temperature range
-40 to +80
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
27-30GHz High Power Amplifier
CHA5296
Ref. : DSCHA52962147 - 27-May-02
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Jig Measurements
Bias conditions: Vd=6V, Vg tuned for Id = 850mA
-20
-15
-10
-5
0
5
10
15
20
14
16
18
20
22
24
26
28
30
32
34
36
Frequency (GHz)
Gai
n
& RLosses (dB)
S22
S11
Linear Gain & Return Losses versus frequency
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
21
22
23
24
25
26
27
28
29
30
31
32
33
Output power (dBm)
G
a
in (dB) & PAE (%
)
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
DC Tota
l Dra
i
n Curre
nt Id (m
A)
32GHz
30GHz
28GHz
26GHz
Id
PAE
Gain
32GHz
30GHz
28GHz
26GHz
28GHz
30GHz
30GHz
32GHz
Gain, PAE & DC drain current vs Output power @ different frequencies
CHA5296
27-30GHz High Power Amplifier
Ref. : DSCHA52962147 - 27-May-02
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
-30
-26
-22
-18
-14
-10
-6
-2
2
6
10
14
18
22
26
30
34
38
42
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Input Power(dBm)
Out
put
power
(
d
Bm
)
F=28,5GHz
F=10MHz
IP3=+41dBm
(F
1
;F
2
)
((2F
1
-F
2
);(2F
2
-F
1
))
((3F
1
-2F
2
);(3F
2
-2F
1
))
((4F
1
-3F
2
);(4F
2
-3F
1
))
IP3 versus total input power @ 28.5GHz
0
5
10
15
20
25
30
35
40
45
50
55
60
10
12
14
16
18
20
22
24
26
28
30
Total Fundamental Output power (dBm)
C/
I
(
d
Bc
)
& I
P
3
(
d
Bm)
c/i3
c/i
IP3
C/I & IP3 versus total fund. output power @ 28.5GHz (
F=10MHz)
27-30GHz High Power Amplifier
CHA5296
Ref. : DSCHA52962147 - 27-May-02
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 50m. All dimensions are in micrometers )
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