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Электронный компонент: CHA5390-99F

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CHA5390
Ref. : CHA53901012 - 12-Jan.-01
1/
8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description

The CHA5390 is a high gain broadband four-
stage monolithic medium power amplifier. It is
designed for a wide range of applications, from
military to commercial communication
systems. The backside of the chip is both RF
and DC grounded. This helps simplify the
assembly process.

The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Broadband performances : 24-30GHz
25dBm output power.
24dB gain
Good broadband matchings
Low DC power consumption, 460mA @ 5V
Chip size : 2.99 X 1.31 X 0.10 mm

Typical in JIG measurements :
-25
-20
-15
-10
-5
0
5
10
15
22
24
26
28
30
32
Frequency (GHz)
-10
-5
0
5
10
15
20
25
30
Input Rloss : grey solid line - Output Rloss : dash line.


Main Characteristics
Tamb. = 25C
Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
24
30
GHz
G Small
signal
gain
21 24 dB
P01
Output power at 1dB gain compression
24
25
dBm
Id Bias
current
460 720 mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
24-30GHz Medium Power Amplifier
CHA5390
Ref. : CHA53901012 - 12-Jan.-01
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd1,2,3,4 = 5V Id=460mA
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
24
30
GHz
G
Small signal gain (1)
21 (2)
24 (2)
dB
G
Small signal gain flatness (1)
2
dB
Is
Reverse isolation
50
dB
P1dB
Pulsed output power at 1dB compression (1)
24
25
dBm
IP3 3
rd
order intercept point
33
dBm
PAE
Power added efficiency at saturation
16
%
VSWRin Input
VSWR
3.0:1
VSWRout Output
VSWR
3.0:1
Id
Bias current
460
720
mA

(1) On
Wafer
measurements
(2) [26-29 GHz]: 24dB min [24-31 GHz]: 21dB min

For Tj<175C ( 80C ambient ), Id should be below 475mA under 5V bias.

Current source biasing network is recommended.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vd Drain
bias
voltage
6.0
V
Id Drain
bias
current
720
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
24-30GHz Medium Power Amplifier
CHA5390
Ref. : CHA53901012 - 12-Jan.-01
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Scattering Parameters ( On wafer Sij measurements )
Bias Conditions :
Vd1,2,3,4 = 5 Volt, Vg1=Vg2,3,4 for Id total = 460 mA.
Freq
S11 S11 S12 S12 S21 S21 S22 S22
GHz
dB /
dB /
dB /
dB /
10,00 -0,29 130,16 -75,37 -43,42 -34,97 121,53 -0,06 -86,95
11,00
-0,28 124,05 -81,16 -71,65 -28,63
83,18 -0,15 -96,45
12,00
-0,37 116,99 -72,11 -126,26 -22,61
38,63 -0,22 -107,06
13,00
-0,44 110,04 -67,15 -168,43 -16,98
-5,99 -0,60 -118,07
14,00
-0,52 101,55 -62,83 161,43 -11,59
-54,05 -1,15 -129,62
15,00
-0,72 92,63 -70,09 78,51 -6,39 -103,80 -1,82 -142,41
16,00
-0,90 82,31 -71,91 128,46 -1,14 -160,60 -3,31 -155,90
17,00
-1,27 70,45 -76,18 107,49 2,51 145,18 -4,18 -169,19
18,00
-1,67 56,58 -64,68
23,57 6,33 87,15 -5,81 178,80
19,00
-2,46 39,70 -57,90
-132,71
10,08
29,84 -7,79 163,19
20,00 -3,43 20,21 -70,93 -36,12 12,99 -40,94 -12,99 172,06
21,00 -4,70 -3,92
-72,62 -152,80 16,09 -93,03 -14,82 133,35
22,00 -6,51 -32,14 -63,69 -136,16 18,62 -165,91 -29,66 66,63
23,00 -8,25 -65,38 -63,11 -140,18 19,93 124,97 -19,94 -63,84
24,00 -9,14 -101,40 -58,44 139,63 21,09 56,97 -12,89 -82,46
25,00 -8,55 -132,96 -61,00 143,50 21,95 -10,22 -10,26 -100,64
26,00
-7,35 -166,59 -57,18 129,53 22,91 -80,46 -8,40 -116,75
27,00
-6,98 162,62 -58,79 86,49 24,06 -154,23 -7,08 -132,67
28,00 -7,08 131,98 -59,95 98,53 24,67 120,37 -6,87 -152,96
29,00
-8,55 104,51 -53,56 39,77 24,75 27,75 -7,49 -160,23
30,00 -10,35 86,80 -56,73 63,65 22,41 -81,77 -5,44 173,15
31,00 -10,35 55,09 -56,70 39,90 15,27 167,03 -5,66 134,04
32,00 -10,57 12,96 -60,16 8,74
5,20 76,86 -7,23 94,35
33,00
-9,06 -29,71 -60,33 3,48 -5,52 4,57 -8,61 52,15
34,00
-5,85 -67,30 -62,25
10,68 -13,87
-54,17 -8,80 13,41
35,00 -4,00 -102,02 -57,44 106,73 -25,98 -129,57 -7,32 -20,49
36,00
-2,75 -128,52 -50,88 63,61 -40,47
149,77 -5,61 -44,58
37,00
-2,05 -147,84 -54,34 37,74 -54,58
67,95 -4,56 -65,34
38,00
-1,57 -163,57 -52,72 21,62 -57,99
-11,22 -3,80 -81,87
39,00
-1,31 -176,44 -49,31 8,02 -44,73
-27,42 -2,84 -96,60
40,00
-1,13 172,84 -46,92 -24,29 -46,12
-20,40 -2,52 -109,78
41,00
-0,92 163,42 -50,28 -74,06 -50,08
-74,61 -2,34 -121,05
42,00
-0,78 154,77 -53,84 -95,08 -51,70
-137,05 -1,76 -132,13
43,00
-0,68 146,73 -52,16 -99,63 -53,15
-122,09 -1,64 -141,28
44,00
-0,65 139,75 -52,59 -134,12 -50,20
-107,23 -1,46 -149,16
45,00 -0,54 133,59 -61,38 -168,80 -54,54 110,71 -1,40 -157,67
46,00
-0,36 127,43 -51,37 122,79 -39,96
-168,88 -1,33 -165,36
47,00
-0,27 121,26 -46,98 89,44 -35,22
-157,54 -1,26 -171,65
48,00
-0,34 115,63 -41,66 36,57 -32,62
-134,30 -1,02 -179,72
49,00
-0,36 110,09 -51,95 3,01 -39,27
-123,83 -1,07 174,56
50,00
-0,33 104,27 -48,05 39,26 -35,81
-4,84 -1,07 168,39
CHA5390
Ref. : CHA53901012 - 12-Jan.-01
4/
8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz Medium Power Amplifier
CHA5390
Ref. : CHA53901012 - 12-Jan.-01
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical In JIG Measurements
Bias Conditions :
Vd1,2,3,4 = 5 Volt, Vg1,2,3,4 for Id = 460 mA
In JIG Scattering Parameters
-25
-20
-15
-10
-5
0
5
10
15
5
10
15
20
25
30
35
40
Frequency (GHz)
-10
-5
0
5
10
15
20
25
30
S11 (dB)
S22 (dB)
S21 (dB)
Power Measurements
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
24
25
26
27
28
29
30
31
32
Frequency (GHz)
P-1dB (dBm)
Linear Gain (dB)
Associated PAE (%)