CHA6042
Ref. DSCHA60423141 - 21 May 03
1/5
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
13.5-16.5 GHz 1-Watt Packaged Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6042 is a packaged four-stage
PHEMT HPA MMIC designed for VSAT ground
terminals and other radio applications. It
provides typically more than 30dBm nominal
output power at 1dB gain compression over the
13.5-16.5GHz frequency range, and 32dB small
signal gain.
The circuit is manufactured with a 0.25m gate
length power PHEMT process on 70m
substrate, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in 10-lead flange package form.
The backside of the package is both RF and DC
grounds. This helps to simplify the assembly
process.
Main Features
Broadband performance : 13.5-16.5GHz
32dB linear gain
>30dBm output power at 1dB comp
31dBm saturated output power
Bias 8V @ 700mA
10-lead flange package
Main Characteristics
Tamb = +25C, Vd = 8V
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
13.5
16.5
GHz
G Small
signal
gain
32 dB
P1dB
CW output power at 1dB gain compression
>30
dBm
Vd Drain
bias
voltage
8
V
Idq Quiescent
bias
current
700 mA
Typical CHA6042-MFF characteristic
14
15
16
17
20
22
24
26
28
30
32
34
36
38
40
14
15
16
17
25
26
27
28
29
30
31
32
33
34
35
V
d
=8 V, I
dq
=700 mA
V
d
=8 V, I
dq
=700 mA
Li
near
G
a
i
n
(d
B)
P
sa
t
(d
Bm
)
Frequency (GHz)
13.5-16.5 GHz POWER AMPLIFIER
CHA6042
Ref. : DSCHA60423141 - 21 May 03
2/5
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Electrical characteristics in JIG test fixture
Tamb = +25C, Vd = 8V, Idq=700 mA (typically Vg=-0.5V)
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
13.5
16.5
GHz
G
Small signal gain (1)
32
dB
G
Small signal gain flatness
2
dB
P1dB
CW output power at 1dB gain compression (1)
>30
dBm
Psat
Saturated output power (1)
31
dBm
RLin
Input return loss (1)
-10
dB
RLout
Output return loss (1)
-10
dB
Is
Reverse Isolation (1)
45
dB
Vd
Drain bias voltage (2)
8
V
Idq
Quiescent bias current (2)
700
1000
mA
Vg
Gate
bias
voltage
-0.5 V
(1)
These values are representative for CW measurements in JIG test fixture.
(2)
Adjusting Vd from 8 to 9V, or Idq from 700 to 1000mA increases by approx. 0.5dB the output
power over the bandwidth.
Absolute Maximum Ratings
(2)
Tamb = +25C
Symbol Parameter
Values
Unit
Vd
Drain bias voltage
9
V
Idq
Maximum quiescent bias current
1.2
A
Vg
Min. and max. gate bias voltage
-2.5 ~ 0
V
Pin
Maximum peak input power overdrive (3)
+8
dBm
Top
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(2) Operation of this device above anyone of these parameters may cause permanent damage.
(3) Duration < 1s.
13.5-16.5 GHz POWER AMPLIFIER
CHA6042
Ref. : DSCHA60423141 - 21 May 03
3/5
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical fixture performance @ Tamb=25C (test fixture losses corrected)
11
12
13
14
15
16
17
18
19
20
-20
-10
0
10
20
30
40
S
11
S
22
CHA6042: V
d
=8 V, I
d
=700mA
S Pa
r
a
m
e
te
r
(
d
B)
Frequency (GHz)
S
21
Typical S-parameters at V
d
=8 V and Idq=700 mA
14
15
16
17
20
25
30
35
CHA6042: V
d
=8 V, I
dq
=700 mA
S
a
t
u
r
a
t
ed ou
tp
ut
p
o
wer
(d
B
m
)
Frequency (GHz)
P
sat
Typical CW saturated output power versus frequency at V
d
=8 V and Idq=700 mA
-12
-10
-8
-6
-4
-2
0
2
20
25
30
35
400
600
800
1000
1200
1400
1600
1800
2000
P
-1dB
I
d
P
out
CHA6042: V
d
=8 V, I
dq
=700mA, f
in
=14 GHz
Dr
ai
n cur
r
e
n
t (
m
A
)
Ou
tp
ut P
o
we
r (d
B
m
)
Input Power (dBm)
Typical CW output power and drain current versus input power at 14 GHz, V
d
=8 V and Idq=700 mA
13.5-16.5 GHz POWER AMPLIFIER
CHA6042
Ref. : DSCHA60423141 - 21 May 03
4/5
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
Pin-Out:
1 - Vd
6 - Vg
2 - GND
7 - GND
3 - RFin
8 - RFout
4 - GND
9 - GND
5 - Vg
10 - Vd
CHA6042
Ref. DSCHA60423141 - 21 May 03
5/5
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Ordering Information
Chip form
:
CHA6042-MFF/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
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