CHM1290
Ref. : DSCHM12902045 - 14-Feb.-02
1/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz SUB-HARMONICALLY PUMPED MIXER
GaAs Monolithic Microwave IC
Description
The CHM1290 is a MFC which integrates a self
biased LO buffer amplifier and a sub-
harmonically diodes mixer for 2LO suppression
It is usable both for up-conversion and down-
conversion. It is designed for a wide range of
applications, typically commercial
communication systems for broadband local
access (LMDS). The backside of the chip is both
RF and DC grounds. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, capacities over via
holes, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form.
Main Features
Broadband performance : 20-30GHz
10dB conversion Loss
29dB 2LO to RF isolation
-4dBm LO input power
-3dBm input power 1 dB compression
Low DC power consumption, 33mA@4.0V
Chip size : 0.86 X 1.28 X 0.10 mm
Main Characteristics
Tamb. = 25C
Parameter Min
Typ
Max
Unit
F
RF
RF frequency range
20
30
GHz
F
LO
LO frequency range
10
15
GHz
F
IF
IF frequency range
DC
6
GHz
L
c
Conversion
Loss
10 12 dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
20-30GHz SHP Mixer
CHM1290
Ref. : DSCHM12902045 - 14-Feb.-02
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd = 4.0V Id=33mA
Symbol Parameter Min
Typ
Max
Unit
F
RF
RF frequency range
20
30
GHz
F
LO
LO frequency range
10
15
GHz
F
IF
IF frequency range
DC
6
GHz
L
c
Conversion
Loss
10 12 dB
P
LO
LO Input power
-4
8
dBm
2xLO Leak 2xLO Leakage (for P
LO
=-4dBm)
30
dBm
IP1dB
Input power at 1dB gain compression
-3
0
3
dBm
LO Match LO Matching
2.0:1
RF Match RF Matching
2.0:1
IF Match IF Matching
2.0:1
Sz
Chip
size
1.1 mm
Id Bias
current
33 mA
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vd Drain
bias
voltage
5.0
V
Id Drain
bias
current
50
mA
Pin
Maximum peak input power overdrive (2)
TBD
dBm
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
20-30GHz SHP Mixer
CHM1290
Ref. : DSCHM12902045 - 14-Feb.-02
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHM1290 : Conversion Loss & Leakages
Vds = 4.0V, Ids = 33mA ; LO Power = -4dBm / IF Frequency = 1.0GHz
-25.0
-22.5
-20.0
-17.5
-15.0
-12.5
-10.0
-7.5
-5.0
-2.5
0.0
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
LO Frequency ( GHz )
C
onv
e
r
s
i
on Los
s
( dB
)
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
L
eakag
e @
L
O
& 2xL
O
(
d
B
m
)
Lc (2xLO+IF)
Lc (2xLO-IF)
P LO @ RF
P 2*LO @ RF
CHM2190 : Conversion LOSS
Vds = 4.0V, Ids = 33mA
LO Power = -4dBm / IF Frequency = 2.0GHz
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
LO Frequency ( GHz )
C
onver
sion G
a
in ( dB
)
RF Freq. = 22GHz
RF Freq. = 30GHz
20-30GHz SHP Mixer
CHM1290
Ref. : DSCHM12902045 - 14-Feb.-02
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHM1290 : Conversion Loss & Leakages
Vds = 4.0V, Ids = 33mA ; LO Power = 0dBm / IF Frequency = 1.0GHz
-25.0
-22.5
-20.0
-17.5
-15.0
-12.5
-10.0
-7.5
-5.0
-2.5
0.0
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
LO Frequency ( GHz )
C
onv
e
r
s
i
on Los
s
(
dB
)
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
L
eakag
e @ L
O
& 2xL
O (
d
B
m
)
Lc (2xLO+IF)
Lc (2xLO-IF)
P LO @ RF
P 2*LO @ RF
20-30GHz SHP Mixer
CHM1290
Ref. : DSCHM12902045 - 14-Feb.-02
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
120pF
10nF
Vd Voltage
RF
Input/Output bonding wires as
short as possible
IF
Input/Output DC coupled to
diodes
LO
Input/Output bonding wires as
short as possible
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended
Bonding pad positions
810 +/- 35
760
1280 +/- 35
35
140
260
860
35
( Chip thickness : 100m. All dimensions are in micrometers )
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