CHR2291
Ref. : DSCHR22912218 06-Aug.-02
1/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12-17GHz Integrated Down Converter
GaAs Monolithic Microwave IC
Description
The CHR2291 is a multifunction chip which
integrates a LO time two multiplier, a balanced
cold FET mixer, and a RF LNA. It is designed for
a wide range of applications, typically commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Broadband performances : 12-17GHz
10 dB conversion gain
3.5dB noise figure
10dBm LO input power
-8dBm RF input power (1dB gain comp.)
Low DC power consumption, 130mA@3.5V
Chip size : 2.49 X 2.13 X 0.10 mm
Typical on wafer measurement:
Conversion Gain & Image suppression @ IF=1& 1.5GHz
Main Characteristics
Tamb. = 25C
Parameter Min
Typ
Max
Unit
F
RF
RF frequency range
12
17
GHz
F
LO
LO frequency range
5.25
7.75
GHz
F
IF
IF frequency range
0.25
1.5
GHz
G
c
Conversion
gain
+10 dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
LO
Q
I
GM
GB
VDM
VDL
GX
VGA
RF
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
11,0
12,0
13,0
14,0
15,0
16,0
17,0
18,0
RF Frequency (GHz)
(d
B
)
2LO Frequency
12-17GHz Integrated Down Converter
CHR2291
Ref. : DSCHR22912218 06-Aug.-02
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd = 3.5V ,Idl=50mA, Idm=50mA
Symbol Parameter Min
Typ
Max
Unit
F
RF
RF frequency range
12
17
GHz
F
LO
LO frequency range
5.25
7.75
GHz
F
IF
IF frequency range
0.25
1.5
GHz
G
c
Conversion gain (1)
+10
dB
NF
Noise Figure (1)
3.5
dB
P
LO
LO Input power
+10
dBm
Img Sup Image Suppression
15
dBc
P1dB
Input power at 1dB gain compression
-8
dBm
LO VSWR Input LO VSWR (1)
2.0:1
RF VSWR Input RF VSWR (1)
2.0:1
Id
Bias current (2)
100
mA
(1) On
Wafer
measurements
(2) Current source biasing network is recommended. Optimum performances for Idm= 50mA
and Idl= 50mA
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vd
Maximum drain bias voltage
4.0
V
Id
Maximum drain bias current
180
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Vdg
Maximum drain to gate voltage ( Vd Vg)
+5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Tch Maximum
channel
temperature
175
C
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
12-17GHz Integrated Down Converter
CHR2291
Ref. : DSCHR22912218 06-Aug.-02
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical On-wafer Measurements
Bias Conditions : Vdm= Vdl= 3.5 V, Vgm= -0.7V, Vgb= -0.4V, Vgx= -0.6V, Vga= -0.4V
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
11,0
12,0
13,0
14,0
15,0
16,0
17,0
18,0
RF Frequency (GHz)
(dB
)
2LO Frequency
Conversion gain & Image suppression with a 90 IQ combiner @ IF=1 & 1.5GHz
Input RF compression by channel
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Input RF power (dBm)
Conversion Gain_I (dB)
Conversion Gain_Q (dB)
IF_power_I (dBm)
IF_power_Q (dBm)
Freq. RF= 15GHz
Freq LO= 7GHz
12-17GHz Integrated Down Converter
CHR2291
Ref. : DSCHR22912218 06-Aug.-02
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical On-board Measurements
Bias Conditions : Vdm= Vdl= 3.5 V, Vgm= -0.7V, Vgb= -0.4V, Vgx= -0.6V, Vga= -0.4V
Conversion Gain & Image Rejection with a 90 IQ combiner
0
4
8
12
16
20
24
28
32
-2
-1,5
-1
-0,5
0
0,5
1
1,5
2
IF Frequency (GHz)
(dB
& dBc)
RF=12.75GHz
RF=14.05GHz
RF=15.35GHz
Gain
Rejection
LO= RF + IF
12-17GHz Integrated Down Converter
CHR2291
Ref. : DSCHR22912218 06-Aug.-02
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
LO
IN
RF
IN
Q
OUT
I
OUT
To Vgm DC Gate Supply
To Vgb DC Gate Supply
To Vgx DC Gate Supply
To Vga DC Gate Supply
To Vdm,Vdl DC Drain Supply
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended
Bonding pad positions
( Chip thickness : 100m. All dimensions are in micrometers )
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