CHR2292
Ref. : DSCHR22921201 -20-July-01
1/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
17-20GHz Integrated Down Converter
GaAs Monolithic Microwave IC
Description
The CHR2292 is a multifunction chip which
integrates a LO time two multiplier, a balanced
cold FET mixer, and a RF LNA. It is designed for
a wide range of applications, typically commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Broadband performances : 17-20GHz
13dB conversion gain
4.0dB noise figure
10dBm LO input power
-10dBm RF input power (1dB gain comp.)
Low DC power consumption, 110mA@3.5V
Chip size : 2.49 X 2.13 X 0.10 mm
-20
-16
-12
-8
-4
0
4
8
12
16
20
12
14
16
18
20
22
24
2*LO Frequency (GHz)
Con
v
er
s
i
on
G
a
i
n
&
Im
age s
u
p
p
r
e
s
s
i
on (
d
B
)
Gc_channel_inf_rf-
Gc_channel_sup_rf-
Gc_channel_inf_rf+
Gc_channel_sup_rf+
Conversion Gain for F_IF=1GHz (on wafer meas.)
P_LO=+10dBm / P_RF= -20dBm
Main Characteristics
Tamb. = 25C
Parameter Min
Typ
Max
Unit
F
RF
RF frequency range
17
20
GHz
F
LO
LO frequency range
7.5
10
GHz
F
IF
IF frequency range
0.25
1.5
GHz
G
c
Conversion
gain
13 dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
LO
Q
I
GM
GB
VDM
VDL
GX
VGA
RF
17-20GHz Mfc Down Converter
CHR2292
Ref. : DSCHR22921201 -20-July-01
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd = 3.5V
Symbol Parameter Min
Typ
Max
Unit
F
RF
RF frequency range
17
20
GHz
F
LO
LO frequency range
7.5
10
GHz
F
IF
IF frequency range
0.25
1.5
GHz
P
LO
LO Input power
+10
dBm
G
c
Conversion gain (1)
13
dB
NF
Noise Figure (1)
4.0
dB
Img Sup Image Suppression (1)
15
dBc
P1dB
RF Input power at 1dB gain compression (1)
-10
dBm
LO VSWR Input LO VSWR (1)
1.5:1
RF VSWR Input RF VSWR (1)
2.5:1
Id
Bias current (2)
110
mA
(1) On Wafer measurements without bonding wires at the RF ports.
(2) Current source biasing network is recommended. Optimum performances for Idm=50mA and
Idl=60mA
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vd Drain
bias
voltage
4.0
V
Id Drain
bias
current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
17-20GHz Mfc Down Converter
CHR2292
Ref. : DSCHR22921201 -20-July-01
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical On-wafer Measurements
Bias Conditions :Vdm= Vdl= 3.5 V, Vgm= -0.9V, Vgb= 0.4V, Vgx= -0.7V, Vga= -0.35V
-20
-16
-12
-8
-4
0
4
8
12
16
20
12
14
16
18
20
22
24
2*LO Frequency (GHz)
C
o
n
v
e
r
s
i
on
G
a
i
n
&
Im
ag
e
s
u
pp
ression
(d
B)
Gc_channel_inf_rf-
Gc_channel_sup_rf-
Gc_channel_inf_rf+
Gc_channel_sup_rf+
Conversion Gain & Image Suppresion @ IF=1GHz
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
17
17.5
18
18.5
19
19.5
20
RF Frequency (GHz)
Noise figure (dB) by channel
17-20GHz Mfc Down Converter
CHR2292
Ref. : DSCHR22921201 -20-July-01
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
-20
-18
-16
-14
-12
-10
-8
-6
-4
Input RF power (dBm)
IF power_I (dBm)
Conv_gain I (dB)
IF power_Q (dBm)
Conv_gain Q (dB)
Freq_RF= 18.3GHz
Freq_OL= 9.65GHz
Input RF compression by channel
17-20GHz Mfc Down Converter
CHR2292
Ref. : DSCHR22921201 -20-July-01
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
LO
IN
RF
IN
Q
OUT
I
OUT
To Vgm DC Gate Supply
To Vgb DC Gate Supply
To Vgx DC Gate Supply
To Vga DC Gate Supply
To Vdm,Vdl DC Drain Supply
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended
Bonding pad positions
( Chip thickness : 100m. All dimensions are in micrometers )
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