CHV2241
Ref. : DSCHV22411074 -15-Mar.-01
1/8
Specifications subject to change without notice
united monolithic semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band Oscillator with integrated Q-band Harmonic
Mixer
GaAs Monolithic Microwave IC
Description
The CHV2241 is a monolithic multifunction
proposed for frequency generation and
transposition. It integrates a K-band oscillator, a
Q-band harmonic mixer and buffer amplifiers.
For performance optimisation, an external port
(ERC) allows a passive resonator coupling to
the oscillator (at half output frequency). All the
active devices are internally self biased.
The circuit is manufactured with the P-HEMT
process : 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
n
K-band Oscillator + Q-band harmonic
mixer
n
External resonator for centre frequency
control and phase noise optimisation
n
High quality oscillator when coupled to
a dielectric resonator
n
Low conversion loss
n
High temperature range
n
On chip self biasing
n
Automatic assembly oriented
n
Chip size 1.82 x 0.97 x 0.1 mm
F_lo = (F_rf - F_if)/2
x2
IF
HIGH Q
RESONATOR
+V
-V
RF
ERC
LO_out_aux
Multifunction block diagram
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
37
37,5
38
38,5
39
RF Frequency (GHz)
Co
n
versi
o
n
l
o
ss (d
B)
Typical conversion loss characteristic
Main Characteristics
Tamb = +25C
Symbol
Parameter
Min
Typ
Max
Unit
F_rf
RF frequency
37.5
38.25
39
GHz
F_lo
Oscillator frequency
(F_rf - F_if)/2
Pn
Oscillator phase noise @ 100kHz (38GHz)
-100
dBc/Hz
Lc
Conversion loss
7
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
CHV2241
K-band Oscillator / Q-band Mixer
Ref. : DSCHV22411074 -15-Mar.-01
2/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Full temperature range, used according to section "Typical assembly and bias configuration"
Symbol
Parameter
Min
Typ
Max
Unit
F_rf
RF frequency
37.5
38.25
39
GHz
F_if
IF frequency
0.1
1.5
GHz
F_lo
Oscillator frequency (1)
(F_rf - F_if)/2
P_lo
Auxiliary LO output power (optional)
-15
-8
-4
dBm
Pn
Phase noise (given at RF frequency) (2)
@ 1kHz
@ 10kHz
@ 100kHz
@ 200kHz
@ 1MHz
-45
-78
-105
-114
-129
-35
-68
-95
-104
-119
dBc/Hz
P_V+
Frequency pushing vs positive supply
voltage
300
1000
kHz/v
Lc
Conversion loss
3
7
11
dB
P_1dB_rf
RF input power at 1dB
-13
-8
0
dBm
Plolk_if
LO leakage at IF port (3)
-25
-18
dBm
P2lo_rf
2LO leakage at RF port (3)
-40
-30
dBm
VSWR_rf
VSWR at RF input port
2:1
2.5:1
IMP_if
IF load impedance
50
+V
Positive supply voltage (4)
4.4
4.5
4.6
V
+I
Positive supply current
50
90
mA
-V
Negative supply voltage (4)
-4.6
-4.5
-4.4
V
-I
Negative supply current
6
10
mA
Top
Operating temperature range
-40
+100
C
(1) The centre frequency is given by the external passive resonator.
See part "Proposed external high Q resonator" for frequency temperature drift
example.
DRO frequency long term stability is DR environment stability dependant
(hermeticity ...).
(2) This characteristic depends on the external resonator Q, the given performance has
been obtained by using an external dielectric resonator (see section "Proposed External
High Q resonator")
(3) Without external filtering
(4) Negative supply voltage must be applied at least 1us before positive supply
voltage.
K-band Oscillator / Q-band Mixer
CHV2241
Ref. : DSCHV22411074 -15-Mar.-01
3/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Absolute Maximum Ratings (1)
Symbol
Parameter
Values
Unit
P_rf
Maximum RF input power (2)
7
dBm
+V
Positive supply voltage
5
V
-V
Negative supply voltage
-5
V
+I
Positive supply current
100
mA
-I
Negative supply current
15
mA
Tstg
Storage temperature range
-55 to +155
C
(1)
Operation of this device above anyone of these parameters may cause permanent damage.
(2)
CW mode.
CHV2241
K-band Oscillator / Q-band Mixer
Ref. : DSCHV22411074 -15-Mar.-01
4/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Mechanical Data and Pin References
Unit = m
External chip size (including saw streets)= 1820 x 970 +/- 35
Chip thickness = 100 +/- 10
HF Pads (2, 6) = 68 x 118
DC/IF Pads (+auxiliary LO output) = 100 x 100
Pin number
Pin name
Description
1,3,5,7,8
Ground : should not be bonded. If required,
please ask for more information
2
ERC
External Resonator Coupling Port
4
LO_OUT_AUX Oscillator auxiliary output port (optional)
6
RF
RF input port
9
IF
IF output port
10
NC
11
-V
Negative supply voltage
12,13
+V
Positive supply voltage
1
2
3
4
5
6
7
8
9
10
11
12
13
K-band Oscillator / Q-band Mixer
CHV2241
Ref. : DSCHV22411074 -15-Mar.-01
5/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Assembly and Bias Configuration
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self biased. The positive and negative voltages can be
respectively connected together (see drawing) according to the recommended
values given in the electrical characteristics table.
For the RF pads the equivalent wire bonding inductances (diameter=25m) have
to be according to the following recommendation.
Port
Equivalent inductance
(nH)
Approximative wire
length (mm)
ERC (2)
L_erc = 0.4
0.5
LO_OUT_AUX (4)
Optional
Not critical , < 1nH
RF (6)
L_rf = 0.28
0.35
For a micro-strip configuration a hole in the substrate is recommended for chip
assembly.
1
2
3
4
5
6
7
8
9
10
11
12
13
-V
+V
IF
-strip line
-strip line
DC and control lines
L_rf
L_erc
>= 120pF
>= 120pF
CHV2241
K-band Oscillator / Q-band Mixer
Ref. : DSCHV22411074 -15-Mar.-01
6/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Proposed external high Q resonator
This chip has been especially designed to be coupled to a high Q dielectric
resonator (For example typical Q. @ 10 GHz=24000 for MURATA
/DRD036EC016). The resonance is given by a dielectric cylinder coupled to a
50
line. The size of the resonator gives the centre frequency and the space
between the resonator and the line gives the loaded quality factor. The following
drawing shows an example of external configuration. As it is the assembly of a
test fixture all the biases are used and the auxiliary LO output is connected.
However, for a fixed application the configuration given in the previous section
can by applied.
Dielectric
resonator
Alumina substrate : thickness=250m
50 Ohm resistance
via hole
3l
2l
d
Additional information
n
Resonator reference example = MURATA /DRD036EC016. Other
kind of resonators can be used (from TEKELEC or TRANS-TECH).
The temperature coefficient has to be chosen according to the
environment.
n
Temperature drift : For example, in the 40 to +100C temperature
range, the frequency drift @ 38GHz is 12 MHz with the MURATA /
DRD036EC016 resonator.
n
Resonator coupling : d=0.3mm , l=1.5mm. These values have been
used in the test fixture, of course they can be modified if the
environment is different.
n
50
line width on alumina (heigth=0.25mm) = 0.238mm
n
Cavity size (mm) : 18 x 17 x 7
K-band Oscillator / Q-band Mixer
CHV2241
Ref. : DSCHV22411074 -15-Mar.-01
7/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
External Resonator Coupling Information
The external resonator has to be an equivalent series resonance. However, this
impedance must be compatible to the negative impedance of the oscillator ERC
port in order to obtain the oscillation conditions and to avoid parasitic oscillations.
Typical impedance of ERC port (Zerc) is given in the following table. The
diagram shows this impedance in a wider band. These values don't include the
wire bonding (self L_erc given in the previous section).
The recommended external resonator properties are:
series equivalent resonance
highest possible Q (dielectric resonator, cavity ...) if no tuning
bandwidth required
resistance at resonant frequency lower than 20
out-off band impedance has to be designed to avoid parasitic oscillation.
CHV2241
K-band Oscillator / Q-band Mixer
Ref. : DSCHV22411074 -15-Mar.-01
8/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Ordering Information
Chip form
:
CHV2241-99F/00
Information furnished is believed to be accurate and reliable. However united monolithic semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of united monolithic semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United monolithic semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from united
monolithic semiconductors S.A.S.
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