CHV2242C
Ref. : DSCHV22423273 - 30 Sep 03
1/9
Specifications subject to change without notice
united monolithic semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Q-band VCO based on Ku-band Oscillator
and Q-band Multiplier
GaAs Monolithic Microwave IC
Description
The CHV2242C is a monolithic multifunction for
frequency generation. It integrates a Ku-band
oscillator with frequency control (VCO), a Q-
band frequency multiplier and buffer amplifiers.
For performance optimisation, two external
ports (ERC1 and ERC2) allow a passive
resonator coupling to the oscillator (at one third
of output frequency). On chip Schottky diode,
based on a P-HEMT, is used as varactor. All the
active devices are internally self biased.
The circuit is manufactured with the P-HEMT
process : 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
n Ku-band VCO + Q-band multiplier
n On chip varactor
n External resonator for centre frequency
control and phase noise optimisation
n Low phase noise
n Auxiliary output at VCO frequency
n High temperature range
n On-chip self biasing
n Automatic assembly oriented
n Chip size 2.41 x 1.18 x 0.1 mm
n BCB Layer protection
(F_out)
MEDIUM Q
RESONATOR
F_VCO = F_out/3
x3
RF_out
V_tune
+V
-V
ERC1
ERC2
Multifunction block diagram
38,1
38,2
38,3
38,4
38,5
38,6
38,7
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0,9
1
1,1
1,2
Tuning voltage (V)
O
u
tput frequency (G
H
z
)
Typical tuning characteristic
(coupled to a micro-strip filter
Main Characteristics
Tamb = +25C
Symbol Parameter Min
Typ
Max
Unit
F_out
Output centre frequency
38
38.25
38.5
GHz
F_vco
Oscillator frequency
F_out/3
F_tune
Output frequency tuning range
150
200
MHz
Pout Output
power
5
7
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
CHV2242C
Q-band VCO
Ref. : DSCHV22423273 - 30 Sep 03
2/9
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Full temperature range, used according to section "Typical assembly and bias configuration"
Symbol Parameter Min
Typ
Max
Unit
F_out
Output centre frequency
38
38.25
38.5
GHz
F_vco
VCO frequency (1)
F_out/3
F_tune
Frequency tuning range (at F_out) (2)
150
200
MHz
P_out
Output
power
5 7
dBm
F_slope
Frequency tuning slope (2)
500
MHz/V
V_tune
Control voltage range
0.2 0.8 0 1.5
V
Pushing Frequency pushing vs positive supply
voltage
60
MHz/v
PN
Phase noise (given at F_out) (2)
@ 10kHz
@ 100kHz
@ 1MHz
-48
-75
-100
-43
-70
-95
dBc/Hz
+V
Positive supply voltage
4.4
4.5
4.6
V
+I
Positive supply current
110
160
mA
-V
Negative supply voltage
-4.6
-4.5
-4.4
V
-I
Negative supply current
5
8
mA
Top
Operating temperature range
-40
100
C
(1) The centre frequency is given by the external passive resonator
(2) This characteristic depends on the resonator Q, the given performance has been
obtained by using a micro-strip filter used as resonator (see section "Proposed External
Medium Q Resonator")
Absolute Maximum Ratings (1)
Symbol Parameter
Values
Unit
V_tune Tuning
voltage
2.5
V
+V
Positive supply voltage
5
V
-V
Negative supply voltage
-5
V
+I
Positive supply current
250
mA
-I
Negative supply current
15
mA
Tstg
Storage temperature range
-55 to +155
C
(1)
Operation of this device above anyone of these parameters may cause permanent damage.
Q-band VCO
CHV2242C
Ref. : DSCHV22423273 - 30 Sep 03
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Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Mechanical Data and Pin References
Unit = m
External chip size =
2410 x 1180 +/- 35
Chip thickness = 100 +/- 10
RF Pads (
1, 2,11
) =
83 x 86
DC/IF Pads =
98 x 95
Pin number
Pin name
Description
1
ERC2
External Resonator Coupling Port 2
2
RF_out
RF output at 38GHz
3, 7
NC
4, 6
+V
Positive supply voltage
5, 8
-V
Negative supply voltage
9
GND (optional)
10
V-tune
Tuning voltage input port
11
ERC1
External Resonator Coupling Port 1
No Number
Ground : should not be bonded. If required, please ask
for more information.
CHV2242C
Q-band VCO
Ref. : DSCHV22423273 - 30 Sep 03
4/9
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Assembly and Bias Configuration
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self biased. The positive and negative voltages can be
respectively connected together (see drawing) according to the recommended
values given in the electrical characteristics table. Due to the high value of
frequency sensitivity versus tuning voltage (around 500MHz/V), the signal
applied to V_tune port must have very low level of noise.
For the RF pads the equivalent wire bonding inductance (diameter=25m) has to
be according to the following recommendation.
Port Equivalent
inductance
(nH)
Approximated wire
length (mm)
ERC1 (11)
L_erc1 = 0.4
0.5
ERC2 (1)
L_erc2 = 0.4
0.5
RF_out (2)
L_out = 0.28
0.35
For a micro-strip configuration a hole in the substrate is recommended for chip
assembly.
Q-band VCO
CHV2242C
Ref. : DSCHV22423273 - 30 Sep 03
5/9
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Proposed External Medium Q Resonator
This resonator can be used for 77GHz FMCW-based radar applications.
The chip has been especially designed to be coupled to a medium Q resonator
printed on temperature compensated soft substrate. The resonance is given by
three half wave coupled lines. The length of the coupler (L) gives the centre
frequency and the space between the coupled lines (s) gives the bandwidth. For
easy connection and phase considerations half wave lines are at the input and
output of the filter. All the recommended dimensions are given in the following
drawing.
The main substrate characteristics are the following (ROGERS R03003)
Dielectric
constant
Thickness Dissipation
factor (10GHz)
Thermal
coefficient
3 250m
0.0013 13
ppm/C
The typical resonator length (L) is 7.35mm for a coupling value (s) of 0.4mm and
for a frequency of 38.25GHz. However this L value should have to be adjusted
depending on the final chip environment.
Other possibility is ARLON/CLTE substrate. (L is 7.27mm for s=0.4mm)
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