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Электронный компонент: CHX2091-99F/00

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CHX2091
Ref. : DSCHX20911208-27-Jul.-01
1/5
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09



20-40GHz Frequency Multiplier
GaAs Monolithic Microwave IC
Description

The CHX2091 is a cascadable by 2 frequency
multiplier monolithic circuit.
It is designed for a wide range of applications, from
military to commercial communication systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.

The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through the
substrate, air bridges and electron beam gate
lithography.

Main Features
Broadband performances :Fin 17-20GHz
12dBm output power for +12dBm input power
DC bias : Vd=3.5Volt@Id=50mA
Chip size : 1.67 x 0.97 x 0.10 mm


X2
Main Characteristics
Tamb. = 25C
Symbol Parameter Min
Typ
Max
Unit
Fin
Input frequency range
17
20
GHz
Fout
Output frequency range
34
40
GHz
Pin Input
power
12
dBm
Pout
Output power for +12dBm input power
10
12
dBm

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Typical measurement
-30
-25
-20
-15
-10
-5
0
5
10
15
16
17
18
19
20
21
22
23
Input Frequency (GHz)
O
u
t
put
pow
er
(
d
B
m
)
Pout (2*Fin)
Pout (Fin)
CHX2091
20-40GHz Frequency Multiplier
Ref. : DSCHX20911208-27-Jul.-01
2/5
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vdd = 3.5V Vg1 = -0.9V Vg2 tuned for Id=50mA ( # -0.4V ) Pin = +12dBm
Symbol Parameter Min
Typ
Max
Unit
Fin
Input frequency range
17
20
GHz
Fout
Output frequency range
34
40
GHz
Pin Input
power
12 15 dBm
Pout
Output power for +12dBm input power
10
12
dBm
Is/Fo
Fin rejection at the output ( 18 < Fin < 20GHz)
25
dBc
VSWRin Input VSWR
2.5:1
VSWRout Output
VSWR
2.5:1
Id
Bias current with RF , Pin=+12dBm
50
70
mA





Absolute Maximum Ratings
Tamb = +25C
Symbol Parameter
Values
Unit
Vd
Drain bias voltage
5
V
Id
Drain bias current
120
mA
Vg
Gate bias voltage
-2 to +0.4
V
Pin Input
Power
17
dBm
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C

(1) Operation of device above anyone of these parameters may cause permanent damage.
20-40GHz Frequency Multiplier
CHX2091
Ref. : DSCHX20911208-27-Jul.-01
3/5
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on jig Measurements
Bias conditions : vd = 3.5V , Vg1 = -0.9V , Vg2 tuned for Id = 50mA ( # -0.4V )
Pout = f(vd) for Pin = 12dBm Fin = 20GHz
Vg2 tuned for Id = 50mA ( # -0.4V )
0
2
4
6
8
10
12
14
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
4
Vd (V)
P
out
2
*
Fin (
d
B
m
)
-35
-30
-25
-20
-15
-10
-5
0
P
out
Fin (
d
B
m
)
Pout ( 2*Fin )
Pout ( Fin )
Pout = f(Vg2) for Pin = 12dBm, Fin = 20GHz & Vd = 3,5V
-8
-6
-4
-2
0
2
4
6
8
10
12
14
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
Vg2 (V)
Pout 2*Fin (dB
m
)
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
Pout Fin (dB
m
)
Pout (2*Fin)
Pout (Fin)
Pout = f(Fin) for Pin=12dBm
-30
-25
-20
-15
-10
-5
0
5
10
15
16
17
18
19
20
21
22
23
Input Frequency (GHz)
Out
put
powe
r
(
d
B
m
)
Pout (2*Fin)
Pout (Fin)
Pout =F(Pin) tem perature dependance for Fin=20G H z
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
16
17
Pin (dB m )
Pout 2*Fin (dBm)
-40
-35
-30
-25
-20
-15
-10
-5
Pout Fin (dBm)
Fout=2XFin (-40C )
Fout=2XFin (25C )
Fout=2XFin (+80C )
Fout=Fin (-40C )
Fout=Fin (25C
Fout=Fin (+80C )
CHX2091
20-40GHz Frequency Multiplier
Ref. : DSCHX20911208-27-Jul.-01
4/5
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Chip Assembly and Mechanical Data
Vd = 3.5V
Vg1 = -0.9V Vg2 tuned for Id = 50mA ( # -0.4V )
100pF
100pF
100pF
To Vg2 DC Gate supply feed
To Vg1 DC Gate supply feed
To Vd DC Drain
supply feed
IN
OUT
x2
Note : Supply feed should be capacitively bypassed. 25
m diameter gold wire is to be prefered.
Pad Size : 100 x 100m
1670 +/- 35
1410
1070
740
490
415
415
970 +/- 35
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
P
o
u
t

(
2
*
F
i
n) for several P
20-40GHz Frequency Multiplier
CHX2091
Ref. : DSCHX20911208-27-Jul.-01
5/5
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09






























Ordering Information

Chip form
:
CHX2091-99F/00


Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S.
assumes no responsability for the consequences of use of such information nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any
patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied.
United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support
devices or systems without express written approval from United Monolithic Semiconductors S.A.S.