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Электронный компонент: CHX2191-99F

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CHX2191
Ref. : DSCHX21913146 - 26 May 03
1/3
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz Frequency Multiplier
GaAs Monolithic Microwave IC
Description

The is a times 2 frequency multiplier monolithic
circuit.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.

The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.

Main Features
Broadband performance : 17-20 GHz
11dBm output power for 0dBm input power
DC power consumption, 70mA @ 4.25V
(with RF)
Chip size : 1.63 x 0.95 x 0.10 mm





Main Characteristics
Tamb. = 25C
Symbol Parameter Min
Typ
Max
Unit
Fin
Input frequency range
17
20
GHz
Fout
Output frequency range
34
40
GHz
Pin Input
power
0
dBm
Pout
Output power for +0dBm input power
11
dBm

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
X 2
Multiplier
X
CHX2191
20-40GHz Frequency Multiplier
Ref. : DSCHX21913146 - 26 May 03
2/3
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09


Electrical Characteristics
Tamb = +25C, Vd = 4.25V Id = 70mA under RF Pin=0dBm
Symbol Parameter Min
Typ
Max
Unit
Fin
Input frequency range
17
20
GHz
Fout
Output frequency range
34
40
GHz
Pin Input
power
0
dBm
Pout
Output power for +0 dBm input power
11
dBm
Is/Fo
Fin level at the output ( 17 < Fin < 20GHz ), for
0dBm input power
-15 dBm
VSWRin Input VSWR
2.5:1
VSWRout Output
VSWR
2.5:1
Id
Bias current (with RF)
70
mA

A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching.





Absolute Maximum Ratings
Tamb = +25C
Symbol Parameter
Values
Unit
Vd
Drain bias voltage
4.5 V
Id
Drain bias current
100 mA
Ta
Operating temperature range
-40 to +85 C
Tstg
Storage temperature range
-55 to +125 C

(1) Operation of device above anyone of these parameters may cause permanent damage.
20-40GHz Frequency Multiplier
CHX2191
Ref. : DSCHX21913146 - 26 May 03
3/3
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09



































Ordering Information

Chip form
:
CHX2191-99F/00



Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S.
assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.