T-1 PACKAGE
NPN PHOTOTRANSISTOR
MID-33H22
Description
Package Dimensions
The MID-33H22 is a NPN silicon phototransistor mou-
nted in a lensed, special dark plastic package. The lens-
ing effect of the package allows an acceptance half view
angle of 15 that is measured from the optical axis to
the half sensitivity point .
Features
l
Wide range of collector current
l
Lensed for high sensitivity
l
Low cost plastic package
l
compatible IRED : 850 nm or above
l
Acceptance view angle : 30
o
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
02/04/2002
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unity Opto Technology Co., Ltd.
Unit: mm ( inches
Notes :
1. Tolerance is 0.25mm (.010") unless otherwise noted .
2. Protruded resin under flange is 0.8 mm (.031") max
3. Lead spacing is measured where the leads emerge from the package.
FLAT DENOTES COLLECTOR
3.00
(.118)
4.00
(.157)
0.800.50
(.032.020)
2.54
(.100)
0.50 TYP
(.020)
1.00
(.040)
1.00MIN
(.040)
23.40MIN.
(.920)
5.25
(.207)
C
E
MID-33H22
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Test Conditions
Symbol
Min.
Typ .
Max.
Unit
Collector-Emitter
I
c
=0.1mA
Breakdown Voltage
Ee=0
Emitter-Collector
Ie=0.1mA
Breakdown Voltage
Ee=0
Collector-Emitter
I
c
=0.5mA,
=850nm
Saturation Voltage
Ee=0.1mW/cm
2
Rise Time
V
CC
=5V, R
L
=1K
Tr
15
Fall Time
I
C
=1mA
Tf
15
Collector Dark
V
CE
=10V
Current
Ee=0
On State Collector
V
CE
=5V,
=850nm
Current
Ee=0.1mW/cm
2
Typical Optical-Electrical Characteristic Curves
02/04/2002
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
30
5
V
V
0.4
V
I
C(ON)
2
mA
S
nA
100
I
CEO
Unity Opto Technology Co., Ltd.
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Vce = 5 V
0
40
80
120
160
200
0
2
4
6
8
10
R
L
- Load Resistance - K
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
Tr Tf Rise and Fall Time -
S
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-75
-25
25
75
125
Vce = 5 V
Ee = 0.1 mW/cm
2
@
= 850 nm
0.001
0.01
0.1
1
10
100
1000
0
40
80
120
Iceo-Collector Dark Current -
A
T
A
- Ambient Temperature -
o
C
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
FIG.5 SENSITIVITY DIAGRAM
1.0
0.9
0.8
Relative Sensitivity
0 10 20
0.5
0.3
0.1
0.2
0.4
0.6
30
90
70
60
50
80
Relative Collector Current (mA)
I
C
Normalized Collector Current
T
A
- Ambient Temperature -
o
C
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
Ee - Irradiance - mW/cm
2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
40
Vcc = 5 V
V
RL
= 1 V
F = 100 Hz
PW = 1 ms
PDF 
ZIP