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Электронный компонент: MIE-114A2

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GaAs HIGH POWER SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
MIE-114A2
Description
Package Dimensions
The MIE-114A2 is a GaAs infrared emitting diode
molded in clear, lensed side looking package .
The MIE-114A2 provides a broad range of
intensity selection .
Features
l
Selected to specific on-line intensity and
radiant intensity ranges
l
Low cost , plastic side looking package
l
Mechanically and spectrally matched to
The MID-11422 of phototransistor .
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
75
mW
Peak Forward Current
1
A
Continuos Forward Current
50
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
Storage Temperature Range
-55
o
C to +100
o
C
Lead Soldering Temperature
260
o
C for 5 seconds
02/04/2002
Unity Opto Technology Co., Ltd.
NOTES :
1. Tolerance is 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
2.54 NOM.
(.100)
0.760.10
(.030.008)
1.550.02
(.061.008)
4.450.20
(.175.008)
(.087)
2.22
(.087)
CATHODE
1.0 MIN.
(.040)
0.5 TYP.
(.020)
Unit: mm ( inches )
SEE NOTE 3
1.220.10
(.048.004)
C
A
5.720.2
(.225.008)
12.7 MIN.
(.500)
MIE-114A2
Optical-Electrical Characteristics
@ T
A
=25
Parameter
Test Conditions
Symbol
Min.
Typ .
Max.
Unit
Radiant Incidance
I
F
=20mA
Ee
-
0.8
-
mW/cm
2
Forward Voltage
I
F
=20mA
V
F
-
1.2
1.35
V
Reverse Current
V
R
=5V
I
R
-
-
100
A
Peak Wavelength
I
F
=20mA
p
-
940
-
nm
Spectral Bandwidth
I
F
=20mA
-
50
-
nm
Half View Angle
I
F
=20mA
2
1/2
-
80
-
deg .
Typical Optical-Electrical Characteristic Curves
02/04/2002
Unity Opto Technology Co., Ltd.
0
1
2
3
4
5
0
20
40
60
80
100
0
20
40
60
80
100
0
1.2
1.6
2.0
2.4
2.8
Forward Voltage (V)
FIG.2 FORWARD CURRENT VS.
FORWARD VOLTAGE
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-40
-20
0
20
40
60
Ambient Temperature T
A
()
FIG.3 RELATIVE RADIANT INTENSITY VS.
VS. AMBIENT TEMPERATURE
Output Power To Value I
F
=20mA
Forward Current (mA)
FIG.4 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
Output Power Relative To
Value at I
F
=20mA
0
0.5
1
840
880
920
960
1000
1040
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
Relative Radiant Intensity
1.0
0.9
0.8
Relative Radiant Intensity
30
40
50
60
70
80
90
0 10 20
FIG.5 RADIATION DIAGRAM
0.5 0.3 0.1 0.2 0.4 0.6
Forward Current (mA)