AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-516A4U
Description
Package Dimensions
The MIE-516A4U is infrared emitting diodes in
GaAs technology with AlGaAs window coating
molded in pastel pink transparent package.
Features
l
High radiant power and high radiant intensity
l
Standard T-1 3/4 (
5mm) package
l
Peak wavelength
p
= 940 nm
l
Good spectral matching to si-photodetector
l
Radiant angle : 16
Absolute Maximum Ratings
Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Current(300pps,10
s pulse)
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
Storage Temperature Range
-55
o
C to +100
o
C
Lead Soldering Temperature
260
o
C for 5 seconds
11/17/2000
Notes :
1. Tolerance is 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package
@ T
A
=25
o
C
Unite: mm ( inches )
Unity Opto Technology Co., Ltd.
7.62
(.300)
1.00
(.040)
.50 TYP.
(.020)
23.4 0MIN.
(.920)
1.00MIN
(.040)
A
C
5.05
(.200)
FLAT DENOTES CATHODE
5.90
(.230)
5.47
(.215)
2.54
(.100)
MIE-516A4U
Optical-Electrical Characteristics
Parameter
Test Conditions
Symbol
Min.
Typ .
Max.
Unit
Radiant Intensity
I
F
=20mA
Ie
4
-
mW/sr
I
F
=50mA
1.3
1.5
I
F
=200mA
1.65
2.0
Reverse Current
V
R
= 5V
I
R
100
A
Peak Wavelength
I
F
=20mA
940
nm
Spectral Bandwidth
I
F
=20mA
50
nm
View Angle
I
F
=20mA
2
1/2
-
16
-
deg.
Typical Optical-Electrical Characteristic Curves
11/17/2000
V
V
F
Forward Voltage
@ T
A
=25
o
C
Unity Opto Technology Co., Ltd.
FIG.6 RADIATION DIAGRAM
0.5
0.3
0.1
0.2
0.4
0.6
30
40
90
70
60
50
80
1.0
0.9
0.8
Relative Radiant Intensity
0 10 20
-55 -25 0
25 50 75 100 125
100
0
50
60
70
80
90
Forward Current I
F
(mA)
Ambient Temperature T
A
(
o
C)
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
0
1
2
3
4
5
0
20
40
60
80
100
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
Output Power Relative To
Value at I
F
=20mA
0
0.5
1
1.5
2
2.5
3
-40
-20
0
20
40
60
Ambient Temperature T
A
(
o
C)
FIG.4 RELATIVE RADIANT INTENSITY
VS.AMBIENT TEMPERATURE
Output Power To Value I
F
=20mA
0
20
40
60
80
100
0.8
1.2
1.6
2
2.4
2.8
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
Forward Current (mA)
0
0.5
1
840
940
1040
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
Relative Radiant Intensity
PDF 
ZIP