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Электронный компонент: MIE-544A4

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GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-544A4
Description
Package Dimensions
The MIE-544A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Features
l
High radiant power and high radiant intesity
l
Suitable for DC and high pulse current operation
l
Standard T-1 3/4 (
5mm) package, radiant angle : 40
l
Peak wavelength
P
=940 nm
l
Good spectral matching to si-photodetecto
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Peak Forward Current
1
A
Continuous Forward Current
50
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
Storage Temperature Range
-55
o
C to +100
o
C
Lead Soldering Temperature
260
o
C for 5 seconds
11/17/2000
5.05
(.199)
Unity Opto Technology Co., Ltd.
Unit: mm(inch)
2.54 NOM.
(.100)
7.62
(.300)
1.00
(.039)
0.50 TYP.
(.020)
23.40 MIN.
(.921)
1.00MIN.
(.039)
FLAT DENOTES CATHODE
5.90
(.230)
5.47
(.215)
SEE NOTE 3
SEE NOTE 2
A
C
Notes :
1. Tolerance is 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
MIE-544A4
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Test Conditions
Symbol
Min.
Typ .
Max.
Unit
Radiant Intensity
I
F
=20mA
Ie
1.0
2.0
mW/sr
Forward Voltage
I
F
=50mA
V
F
1.30
1.5
V
Reverse Current
V
R
=5V
I
R
100
A
Peak Wavelength
I
F
=20mA
940
nm
Spectral Bandwidth
I
F
=20mA
50
nm
View Angle
I
F
=20mA
2
1/2
40
deg .
Typical Optical-Electrical Characteristic Curves
11/17/2000
0
10
20
30
40
50
60
-55 -25
0
25 50 75 100 125
Unity Opto Technology Co., Ltd.
0
20
40
60
80
100
0
1.2 1.6 2.0 2.4 2.8
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
Forward Current (mA)
0
0.5
1
1.5
2
2.5
3
-40 -20
0
20
40
60
Ambient Temperature T
A
(
o
C)
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
Output Power To Value I
F
=20mA
Ambient Temperature T
A
(
o
C)
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
0
0.5
1
840
940
1040
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
Relative Radiant Intensity
0
1
2
3
4
5
0
20
40
60
80 100
Output Power Relative To
Value at I
F
=20mA
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
Relative Radiant Intensity
1.0
0.9
0.8
0.5 0.3 0.1 0.2 0.4 0.6
0 10 20
FIG.6 RADIATION DIAGRAM
30
90
70
60
50
80
40
Forward Current I
F
(mA)