SLOTTED
PHOTOINTERRUPTER
MIT-5A116
Description
Package Dimensions
The MIT-5A116 consists of a Gallium Arsenide in-
frared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing . It is a transmissive
subminiature photointerrupter.
Features
l
Non -contact switching
l
For- direct pc board or
l
Dual - in - line socket mounting
l
Fast switching speed
l
Choice of mounting configuration.
NOTE
1. Tolerance is 0.25 mm (.006") unless otherwise noted.
Absolute Maximum Ratings
@T
A
=25
o
C
Parameter
Symbol
Maximum Rating
Unit
Continuous Forward Current
I
F
50
mA
INPUT
Reverse Voltage
V
R
5
V
Power Dissipation
P
ad
75
mW
Collector-emitter breakdown voltage
V
(BR)CEO
30
V
OUTPUT Emitter-Collector breakdown voltage
V
(BR)ECO
5
V
Collector power dissipation
P
C
75
mW
Total power dissipation
P
TOT
mW
Operating Temperature Range
T
opr
Storage Temperature Range
T
stg
04/01/2002
100
-25
o
C to + 85
o
C
-40
o
C to +100
o
C
Unity Opto Technology Co., Ltd.
Unit: mm ( inches )
0.8 (.031)
1
2
4
3
14.0 (.551)
5.0 0.2
10.3 0.3
2.5 (.098)
7.5
0.3 (.295)
10.0 (.394)
7.0 (.276)
0.7 (.028)
10 MIN
(.197)
(.394)
(.406)
1.0 (.040) MIN
0.5 0.10
3.7
0.2
2.54 NOM
A-A SECTION
2.35 0.1
6.6 0.1
6.0
5.2
0.1
2-
0.7
0.1
(.260)
(.028)
(.205)
(.093)
(.236)
(.146)
(.020)
0.5
A
A
(.020)
(.100)
MIT-5A116
Optical-Electrical Characteristics
@T
A
=25
o
C
Parameter
Symbol Min.
Typ.
Max.
Unit.
Test Conditions
Input
Forward Voltage
V
F
-
1.2
1.4
V
I
F
=20mA
Reverse Current
I
R
-
-
10
A V
R
=5V
Output
Collector Dark Current
Iceo
-
-
100
nA
Vce =10V
Collector Emitter
V
CE(SAT)
-
-
0.4
V
Ic=0.1mA,Ee=0.1mW/cm
2
Collector Current
Ic (on)
0.5
-
10
mA
I
F
=20mA, Vce =5V
Transfer Cha-Response Time (RISE)
t
r
-
20
100
S Ic=100
A, Vce =5V
racteristics Response Time (FALL)
t
f
-
20
100
S R
L
=1k, d =1mm
Typical Optical-Electrical Characteristic Curves
04/01/2002
Unity Opto Technology Co., Ltd.
0
100
200
300
400
500
600
700
0
5
10
15
20
25
30
0
20
40
60
80
100
120
-25
0
25
50
75
100
Ambient Temperature T
A
(
o
C )
Fig.2 Power Dissipation vs
Ambient Temperature
Power Dissipation (mW)
P
TOT
P
D
, P
C
0
20
40
60
80
100
120
-25
0
25
50
75
100
Collector Current Ic (
A)
Vce=2V
Ta=25
Forward Current I
F
(mA)
Fig.4 Collector Current vs
Forward Voltage
0
10
20
30
40
50
60
-25
0
25
50
75
100
Ambient Temperature T
A
Fig.1 forward Current
VS
.
Ambient Temperature
Relative Collector Current (%)
Ambient Temperature T
A
(
o
C )
Fig.6 Relative Collector Current
VS
. T
A
Forward Current I
F
(mA)
Forward Current I
F
(mA)
0
100
200
300
400
500
600
700
0
2
4
6
8
10
12
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
I
F
=15mA
10mA
4mA
20mA
Ta=25
Collector Current Ic (
A)
Forward Voltage V
F
(V)
Fig.3 Forward Current
VS
Forward Voltage
0
20
40
60
80
100
0.8
1.2
1.6
2.0
2.4
2.8
MIT-5A116
Typical Optical-Electrical Characteristic Curves
Response Time Measurement Circuit
Sensing Position Characteristics
(Typical)
(Center of optical axis)
04/01/2002
Ambient Temperature T
A
(
o
C )
Fig.7 Collector Dark Current vs.
Ambient Temperature
0
25
50
75
100
0.1
1
10
100
1000
0.01
0.1
1
10
100
Response Time (
s)
Load Resistance R
t
(K
)
Fig.8 Response Time vs.
Load Resistance
Collector Dark Current I
CEO
Unity Opto Technology Co., Ltd.
0
20
40
60
80
100
700
800
900
1000 1100 1200
Relative Sensitivity (%)
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
Input 0
Output 0
90 %
10 %
tr
tf
t
t
V
CE
=20V
Ta=25
10
-6
10
-7
10
-8
10
-9
10
-10
0
50
100
-3 -2 -1 0 1 2 3 -3 -2 -1 0 1 2 3
Relative light current I
L
(%)
Distance d (mm)
Y
X
0
+
0
+
Y
X
I
F
=20mA
V
CE
=5V
Ta=25
o
C
I
F
=20mA
V
CE
=5V
Ta=25
o
C
V
CE
=2V
I
C
=100mA
Ta=25
IL
Input
V
CC
Output
VR
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