SLOTTED
PHOTOINTERRUPTER
MIT-5A11C
Description
Package Dimensions
The MIT-5A11C consists of a Gallium Arsenide in-
frared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing . It is a refl-
ective subminiature photointerrupter.
Features
l
Non -contact switching
l
For- direct pc board or
l
Dual - in - line socket mounting
l
Fast switching speed
l
Choice of mounting configuration.
NOTE
1. Tolerance is 0.25 mm (.006") unless otherwise noted.
Absolute Maximum Ratings
@T
A
=25
o
C
Parameter
Symbol
Maximum Rating
Unit
Continuous Forward Current
I
F
50
mA
INPUT
Reverse Voltage
V
R
5
V
Power Dissipation
P
ad
75
mW
Collector-emitter breakdown voltage
V
(BR)CEO
30
V
OUTPUT Emitter-Collector breakdown voltage V
(BR)ECO
5
V
Collector power dissipation
P
C
75
mW
Total power dissipation
P
TOT
100
mW
Operating Temperature Range
T
opr
Storage Temperature Range
T
stg
04/01/2002
-25
o
C to +85
o
C
-40
o
C to +100oC
Unity Opto Technology Co., Ltd.
Unit: mm ( inches )
9.6
7.0 (.276)
(.378)
0.5
(.020)
12.8 0.05
5.2
3.8
3.2 0.15
6.4
2.5
1.72
5.8
(.504)
(.205)
(.126)
(.252)
(.150)
(.068
(.098)
1
2
4
3
MIT-5A11C
Optical-Electrical Characteristics
@T
A
=25
o
C
Parameter
symbol
Min.
Typ.
Max.
Unit.
Test Conditions
Input
Forward Voltage
V
F
1.2
1.4
V
I
F
=20mA
Reverse Current
I
R
10
A V
R
=5V
Collector Dark Current
Iceo
100
nA
Vce =10V
Collector Emitter
V
CE(SAT)
0.4
V
Ic=0.1mA,Ee=0.1mW/cm
2
Collector Current
Ic (on)
500
A I
F
=20mA, Vce =5V
Transfer Cha- Response Time (RISE)
t
r
20
100
S Ic=100
A, Vce =5V
racteristics
Response Time (FALL)
t
f
20
100
S R
L
=1k, d =1mm
Typical Optical-Electrical Characteristic Curves
04/01/2002
Unity Opto Technology Co., Ltd.
0
100
200
300
400
500
600
700
0
5
10
15
20
25
30
0
20
40
60
80
100
120
-25
0
25
50
75
100
Ambient Temperature T
A
(
o
C )
Fig.2 Power Dissipation vs
Ambient Temperature
Power Dissipation (mW)
1
10
100
1000
0
1
2
3
4
0
20
40
60
80
100
120
-25
0
25
50
75
100
Collector Current Ic (
A)
Forward Current I
F
(mA)
Fig.4 Collector Current vs
Forward Voltage
0
10
20
30
40
50
60
-25
0
25
50
75
100
Ambient Temperature T
A
Fig.1 forward Current
VS
.
Ambient Temperature
Relative Collector Current (%)
Ambient Temperature T
A
(
o
C )
Fig.6 Relative Collector Current
VS
. T
A
Forward Current I
F
(mA)
Forward Current I
F
(mA)
0
100
200
300
400
500
600
700
0
2
4
6
8
10
12
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
I
F
=15mA
10mA
4mA
20mA
Collector Current Ic (
A)
Output
Forward Voltage V
F
(V)
Fig.3 Forward Current
VS
Forward Voltage
P
D
, P
C
P
TOT
Ta=25
o
C
Vce=2V
Ta=25
MIT-5A11C
Typical Optical-Electrical Characteristic Curves
Response Time Measurement Circuit
Sensing Position Characteristics
(Typical)
(Center of optical axis)
04/01/2002
0
25
50
75
100
0.1
1
10
100
1000
0.01
0.1
1
10
100
10
-6
10
-7
10
-8
10
-9
10
-10
V
CE
=20V
Response Time (
s)
Load Resistance R
t
(K
)
Fig.8 Response Time vs.
Load Resistance
Collector Dark Current I
CEO
Unity Opto Technology Co., Ltd.
0
20
40
60
80
100
700
800
900
1000
1100
1200
Relative Sensitivity (%)
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
Ambient Temperature T
A
(
o
C )
Fig.7 Collector Dark Current vs.
Ambient Temperature
Ta=25
Input
Output
90 %
10 %
tr
tf
t
t
0
50
100
-2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm)
Relative light current I
L
(%)
I
F
=20mA
V
CE
=5V
Ta=25
I
F
=20mA
V
CE
=5V
Ta=25
Distance d (mm)
Y
X
0
+
0
+
Y
X
V
CE
=2V
I
C
=100mA
Ta=25
IL
Input
V
CC
Output
VR
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