Chip Appearance
Chip Size
400m x 337.5m
Chip Thickness
230 20m
Bonding Pad Dimension
Scribe Line Width
50m
Top Metal
Al
Back Metal
Ti - Ni - Ag
Raper Size
4 inch
Absolute Max Ratings (Ta=25C)
(TO-92)
Item
Symbol
Max Ratings
Unit
Note
Collector-Base Voltage
V CBO
30
V
Collector-Emitter Voltage
V CEO
20
V
Emitter-Base Voltage
V EBO
5
V
Collector Current
I C
30
mA
Collector Loss (Power Dissipation)
P C
300
mW
Junction Temperature
T j
125
C
Storage Temperature
T stg
-65 to +125
C
Electrical Characteristics (Ta=25C)
(TO-92)
Item
Symbol
Min.
Typ.
Max.
Unit
Condition
Collector-Base
B V CBO
30
-
-
V
I
C
= 100 A
Breakdown Voltage
Collector-Emitter
B V CEO
20
-
-
V
I
C
= I mA
Breakdown Voltage
Emitter-Base
B V EBO
5
-
-
V
I
E
= 100 A
Breakdown Voltage
Collector Cut-Off Current
I CBO
-
-
50
nA
VCB = 20 V
Emitter Cut-Off Current
I EBO
-
-
10
A
VEB = 5 V
DC Current Gain
h FE
40
-
75
-
VCE = 10 V, IC = 1 mA
Collector Saturation
V CE(SAT)
-
-
0.3
V
IC = 10 mA, IB = 1 mA
Probing Spec (Ta=25C)
No.
Mode
Limit
Condition
Min.
Max.
Unit
1
V BE
-
0.74
V
I B = 1 mA
2
B V CEO
20
-
V
I C = mA
3
I CBO
-
50
nA
V CB = 20 V
4
I EBO
-
10
A
V EB = 5 V
5
I CEO
-
-
A
V CE = V
6
h FE
40
75
-
V CE = 10 V, I C = 1 mA
7
V CE(SAT)
-
-
V
I C = mA, I B = mA
SPEC SHEET
BF495D
Emitter
Dia=75m
Base
Dia=75m
V
BE
(set) < 1 V
@ I
C
= 10 mA
V
CE
= 10 V
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