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Электронный компонент: 2SB772S-TO92

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UNISONIC TECHNOLOGIES CO.,
2SB772S
PNP EPITAXIAL SILICON TRANSISTOR
www.unisonic.com.tw
1
Copyright 2005 Unisonic Technologies Co.,
QW-R201-023.B
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB772S is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882S

TO-92
1
*Pb-free plating product number: 2SB772SL
PIN CONFIGURATION
PIN NO.
PIN NAME
1 Emitter
2 Collector
3 Base
ORDERING INFORMATION
Order Number
Normal Lead
free
Package Packing
2SB772S-T92-B 2SB772SL-T92-B
TO-92
Tape Box
2SB772S-T92-K 2SB772SL-T92-K
TO-92
Bulk






2SB772S
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R201-023.B
ABSOLUATE MAXIUM RATINGS
(Ta = 25
)
PARAMETER SYMBOL
RATINGS
UNIT
Collector -Base Voltage
V
CBO
-40 V
Collector -Emitter Voltage
V
CEO
-30 V
Emitter -Base Voltage
V
EBO
-5 V
Peak Collector Current
I
CM
-7 A
DC Collector Current
I
C
-3 A
Base Current
I
B
-0.6 A
Power Dissipation
P
D
0.5 W
Operating Temperature
T
J
+150
Storage Temperature
T
STG
-40 ~ +150
ELECTRICAL CHARACTERISTICS
(Ta= 25
, unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
I
CBO
V
CB
=-30V,I
E
=0
-1000
nA
Emitter Cut-Off Current
I
EBO
V
EB
=-3V,Ic=0
-1000
nA
DC Current Gain(Note 1)
h
FE1
h
FE2
V
CE
=-2V,Ic=-20mA
V
CE
=-2V,Ic=-1A
30
100
200
150
400
Collector-Emitter Saturation Voltage
V
CE(sat)
Ic=-2A,I
B
=-0.2A
-0.3
-0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
Ic=-2A,I
B
=-0.2A
-1.0
-2.0
V
Current Gain Bandwidth Product
f
T
V
CE
=-5V,Ic=-0.1A
80
MHz
Output Capacitance
Cob
V
CB
=-10V,I
E
=0,f=1MHz
45
pF
Note 1: Pulse test: P
W
<300
s, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK Q
P
E
RANGE
100 ~ 200
160 ~ 320
200 ~ 400
2SB772S
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R201-023.B
TYPICAL CHARACTERICS
Fig.1 Static characteristics
-Collector-Emitter voltage (V)
-C
o
l
l
e
ct
o
r
cu
rre
n
t
,
I
c

(A)
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
Case Temperature, Tc (
)
-I
B
=1mA
-I
B
=2mA
-I
B
=3mA
-I
B
=4mA
-I
B
=5mA
-I
B
=6mA
-I
B
=7mA
-I
B
=8mA
-I
B
=9mA
Fig.2 Derating curve of safe
operating areas
-
I
c D
e
ra
t
i
n
g

(%
)
200
150
100
50
0
-50
0
50
100
150
S/b
lim
ited
Dis
sip
atio
n li
m
ited
Case Temperature, Tc (
)
200
150
100
50
0
-50
Fig.3 Power Derating
Po
w
e
r
D
i
ss
ip
a
t
io
n
(
W)
0
4
8
12
Fig.4 Collector Output
capacitance
-Collector-Base Voltage(v)
Ou
tp
u
t
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
10
0
10
-1
10
-2
10
-3
10
1
10
2
10
3
10
0
I
E
=0
f=1MHz
Fig.5 Current gain -
bandwidth product
C
u
rre
n
t
g
a
i
n
-
b
a
nd
wid
t
h
p
r
odu
c
t
,

f
T
(MH
z
)
10
1
10
2
10
3
10
0
V
CE
=5V
Collector-Emitter Voltage
-C
o
l
l
e
ct
o
r
cu
rre
n
t
,
I
c

(A)
Fig.6 Safe Operating Area
Ic(max),DC
Ic(max),Pulse
10m
S
1mS
0.1
m
S
Collector current, Ic (A)
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
10
0
10
1
10
2
I
B
=8mA
I
B
=8mA
2SB772S
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
4
www.unisonic.com.tw
QW-R201-023.B
TYPICAL CHARACTERICS(cont.)
Fig.7 DC current gain
-Collector current, Ic (mA)
-Collector current, Ic (mA)
Fig.8 Saturation Voltage
D
C
cu
rre
n
t
G
a
i
n
,
H
FE
10
1
10
2
10
3
10
0
-
S
a
t
u
r
at
i
o
n V
o
l
t
ag
e (
m
V
)
V
CE
=-2V
V
CE
(sat)
V
BE
(sat)
10
0
10
1
10
2
10
3
10
4
10
0
10
1
10
2
10
3
10
4
10
0
10
1
10
2
10
3
10
4




























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exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
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