UTC 2SD1616/A
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-008,A
NPN EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
*Audio frequency power amplifier
*Medium speed switching
TO-92
1
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
VALUE
UNIT
Storage Temperature
Tstg
-55 ~+150
C
Junction Temperature
Tj
150
C
Total Power Dissipation (Ta=25
C)
Pc 750 mW
Collector to Base Voltage: D1616
D1616A
VCBO 60
120
V
Collector to Emitter Voltage: D1616
D1616A
VCEO 50
60
V
Emitter to Base Voltage
VEBO
6
V
Collector Current (DC)
Ic
1
A
Collector Current (*Pulse)
Ic
2
A
Note: (*) Pulse width
10ms, Duty cycle<50%
CHARACTERISTICS
(Ta=25
C)
CHARACTERISTIC SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-Off Current
ICBO
VCB=60V
100
nA
Emitter Cut-Off Current
IEBO
VEB= 6V
100
nA
Collector-Emitter Saturation Voltage VCE(SAT)
IC=1A, IB=50mA
0.15
0.3
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=1A, IB=50mA
0.9
1.2
V
Base Emitter On Voltage
VBE(ON)
VCE=2V, IC=50mA
600
640
700
mV
DC Current Gain: D1616
D1616A
hFE1 VCE=2V,
IC=100mA
135
135
600
400
hFE2
VCE=2V,
IC=1A
81
Current Gain Bandwidth Product
fT
VCE=2V, IC=100mA
100
160
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
19
pF
Turn On Time
ton
VCE=10V, IC=100mA
0.07
us
UTC 2SD1616/A
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R201-008,A
CHARACTERISTIC SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Storage Time
ts
IB1=-IB2=10mA
0.95
us
Fall Time
tf
VBE(off)=-2
-3V
0.07 us
Classification of h
FE1
RANK Y G L
hFE1 135-270
200-400
300-600
UTC 2SD1616/A
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R201-008,A
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