UTC 2SA1015
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-004,A
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BV
CEO
=-50V
*Collector current up to 150mA
*High hFE linearity
*Complement to 2SC1815
TO-92
1
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
-50 V
Collector-emitter voltage
V
CEO
-50 V
Emitter-base voltage
V
EBO
-5 V
Collector dissipation
Pc
400
mW
Collector current
Ic
-150
mA
Base current
I
B
-50
mA
Junction Temperature
T
j
125
C
Storage Temperature
T
STG
-65 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector-base breakdown voltage
BV
CBO
Ic=-100
A,I
E
=0
-50
V
Collector-emitter breakdown voltage
BV
CEO
Ic=-10mA,I
B
=0 -50
V
Emitter-base breakdown voltage
BV
EBO
I
E
=-10
A,Ic=0
-5 V
Collector cut-off current
I
CBO
V
CB
=-50V,I
E
=0
-100
nA
Emitter cut-off current
I
EBO
V
EB
=-5V,Ic=0
-100
nA
DC current gain(note)
h
FE1
h
FE2
V
CE
=-6V,Ic=-2mA
V
CE
=-6V,Ic=-150mA
70
25
400
Collector-emitter saturation voltage
V
CE
(sat) Ic=-100mA,I
B
=-10mA
-0.1
-0.3
V
Base-emitter saturation voltage
V
BE
(sat) Ic=-100mA,I
B
=-10mA
-1.1
V
Current gain bandwidth product
f
T
V
CE
=-10V,Ic=-1mA 80
MHz
Output capacitance
Cob
V
CB
=-10V,I
E
=0,f=1MHz
4.0
7.0
pF
Noise Figure
NF
Ic=-0.1mA,V
CE
=-6V
R
G
=1k
,f=100Hz
0.5 6 dB
UTC 2SA1015
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-004,A
CLASSIFICATION OF hFE1
RANK Y G
RANGE 120-240 200-400
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic
,C
ol
l
e
c
t
or
c
u
r
r
ent (
m
A)
-0
-4
-8
-12
-16
-20
0
-10
-20
-30
-40
-50
I
B
=-50
A
I
B
=-100
A
I
B
=-150
A
I
B
=-200
A
I
B
=-250
A
I
B
=-300
A
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
,
DC c
u
r
r
e
n
t
G
a
i
n
10
2
10
1
10
0
10
3
-10
3
-10
2
-10
1
-10
0
-10
-1
V
CE
=-6V
Fig.3 Base-Emitter on Voltage
Ic
,C
ol
l
e
c
t
or
c
u
r
r
ent (
m
A)
Base-Emitter voltage (V)
0
-0.2
-0.4
-0.6
-0.8
-1.0
V
CE
=-6V
Ic,Collector current (mA)
Satur
a
ti
on v
o
l
t
age (
V
)
-10
1
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
10
3
C
u
r
r
ent G
a
i
n
-
bandw
i
d
th
pr
oduc
t,f
T
(M
H
z
)
10
0
10
1
10
2
V
CE
=-6V
Collector-Base voltage (V)
C
ob,C
apac
i
t
anc
e (
p
F
)
10
0
10
1
10
2
f=1MHz
I
E
=0
-10
-1
-10
0
-10
1
-10
2
-10
3
-10
2
-10
1
-10
0
-10
-1
-10
0
-10
1
-10
2
-10
0
-10
1
-10
2
-10
3
-10
-1
-10
-2
-10
0
-10
-1
-10
-1
10
-1
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