UTC MCR101
SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-009,B
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
DESCRIPTION
PNPN devices designed for high volume,
line-powered consumer applications such as relay
and lamp drivers, small motor controls, gate drivers
for larger thyristors, and sensing and detection
circuits. Supplied in an inexpensive plastic TO-92
package which is readily adaptable for use in
automatic insertion equipment.
DESCRIPTION
*Sensitive Gate Allows Triggering by Micro controllers
and Other Logic circuits
*Blocking Voltage to 600V
*On-State Current Rating of 0.8A RMS at 80
C
*High Surge Current Capability 10A
*Minimum and Maximum Values of IGT, VGT and IH
Specified for Ease of Design
*Immunity to dV/dt 20V/
sec Minimum at 110C
*Glass-Passivated Surface for Reliability and
Uniformity
TO-92
1
1: GATE 2: ANODE 3:CATHODE:
THERMAL CHARACTERISTICS
PARAMETER SYMBOL
MAX
UNIT
Thermal Resistance, Junction to Case
R
JC
75
C/W
Thermal Resistance, Junction to Ambient
R
JA
200
C/W
Lead Solder Temperature
(<1/16" from case, 10 secs max)
T
L
260
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
MAX
UNIT
Peak Repetitive Off-State Voltage(note)
(T
J
=-40 to 110
C, Sine Wave, 50 to 60Hz; Gate Open)
MCR101-4
MCR101-6
MCR101-8
V
DRM,
V
RRM
200
400
600
V
On-Sate RMS Current
(Tc=80
C) 180 Condition Angles
I
T(RMS)
0.8
A
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, T
J
=25
C)
I
TSM
10 A
UTC MCR101
SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-009,B
PARAMETER SYMBOL
MAX
UNIT
Circuit Fusing Considerations
(t=8.3 ms)
I
2
t 0.415 A
2
s
Forward Peak Gate Power
(T
A
=25
C, Pulse Width 1.0s)
P
GM
0.1 W
Forward Average Gate Power
(T
A
=25
C, t=8.3ms)
P
G(AV)
0.1 W
Peak Gate Current Forward
(T
A
=25
C, Pulse Width1.0s)
I
GM
1 A
Peak Gate Voltage Reverse
(T
A
=25
C, Pulse Width1.0s)
V
GRM
5 V
Operating Junction Temperature Range @ Rated V
RRM
and
V
DRM
T
J
-40 to +110
C
Storage Temperature Range
Tstg
-40 to +150
C
Note: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise stated)
PARAMETER TEST
CONDITION
SYMBOL
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking
Current Tc=25
C
Tc=125
C
V
D
=Rated V
DRM
and V
RRM
; R
GK
=1k
I
DRM
, I
RRM
10
100
A
A
ON CHARACTERISTICS
Peak Forward On-State Voltage
(Note1)
I
TM
=1A Peak @ T
A
=25
C V
TM
1.7
V
Gate Trigger Current (Continuous
dc)(note2)
V
AK
=7Vdc, R
L
=100
, T
C
=25
C I
GT
40
200
A
Holding Current (note 3) Tc=25
C
Tc=-40
C
V
AK
=7Vdc, initiating current=20mA
I
H
0.5
5
10
mA
Latch Current Tc=25
C
Tc=-40
C
V
AK
=7V, Ig=200
A I
L
0.6
10
15
mA
Gate Trigger Current
(continuous dc) (Note 2) Tc=25
C
Tc=-40
C
V
AK
=7Vdc, R
L
=100
V
GT
0.62
0.8
1.2
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State
Voltage
V
D
=Rated V
DRM
, Exponential
Waveform, R
GK
=1000
, T
J
=110
C
dV/dt 20
35
V/
s
Critical Rate of Rise of On-State
Current
I
PK
=20A; Pw=10
sec;
diG/dt=1A/
sec, Igt=20mA
di/dt
50
A/
s
Notes: 1. Indicates Pulse Test Width
1.0ms, duty cycle 1%
2. R
GK
=1000
included in measurement.
3. Does not include R
GK
in measurement.
UTC MCR101
SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-009,B
VOLTAGE CURRENT CHARACTERISTIC OF SCR
SYMBOL PARAMETER
V
DRM
Peak Repetitive Off Stat Forward Voltage
I
DRM
Peak Forward Blocking Current
V
RRM
Peak Repetitive Off State Reverse Voltage
I
RRM
Peak Reverse Blocking Current
V
TM
Peak On State Voltage
I
H
Holding
Current
CLASSIFICATION OF I
GT
RANK B
C
AA
AB
AC
AD
RANGE 48~105
A 95~200A 8~16A 14~21A 19~25A 23~52A
UTC MCR101
SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-009,B
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