UTC 2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-028,A
GENERAL PURPOSE APPLIATION
FEATURES
*Collector-Emitter Voltage: V
CEO
=40V
*Collector Dissipation: Pc(max)=625mW
*Complementary to 2N3904
TO-92
1
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C ,unless otherwise specified )
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
-40 V
Collector-emitter voltage
V
CEO
-40 V
Emitter-base voltage
V
EBO
-5 V
Collector current
Ic
-200
mA
Base Current
I
B
-50
mA
Collector dissipation
Pc
625
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector Cut-off Current
ICEX
V
CE
=-30V, V
EB
=-3V
-50
nA
Base Cut-off Current
I
BL
V
CE
=-30V, V
EB
=-3V
-50
nA
Collector-base breakdown voltage
V
CBO
Ic=-10
A,I
E
=0
-40
V
Collector-emitter breakdown voltage
(note)
V
CEO
Ic=-1mA,I
B
=0 -40
V
Emitter-base breakdown voltage
V
EBO
I
E
=-10
A, Ic=0
-6
V
DC current gain (note)
hFE1
hFE2
hFE3
hFE4
hFE5
V
CE
=-1V,Ic=-0.1mA
V
CE
=-1V,Ic=-1mA
V
CE
=-1V,Ic=-10mA
V
CE
=-1V,Ic=-50mA
V
CE
=-1V,Ic=-100mA
60
80
100
60
30
300
Collector-emitter saturation voltage
(note)
V
CE
(sat)1
V
CE
(sat)2
Ic=-10mA,I
B
=-1mA
Ic=-50mA,I
B
=-5mA
-0.25
-0.4
V
Base-emitter saturation voltage
V
BE
(sat)1
V
BE
(sat)2
Ic=-10mA,I
B
=-1mA
Ic=-50mA,I
B
=-5mA
-0.65
-0.85
-0.95
V
Transition voltage
f
T
V
CE
=-20V,Ic=-10mA,f=100MHz
250
MHz
UTC 2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R201-028,A
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Output capacitance
Cob
V
CB
=-5V,I
E
=0, f=1MHz
4.5
pF
Turn on time
t
ON
Vcc=-3V,
V
BE
=-0.5V, Ic=-10mA,
I
B
1=-1mA
70
ns
Turn off time
t
OFF
I
B
1=1
B
2=-1mA
300
ns
Note: Pulse test: PW<=300
s, Duty Cycle<=2%
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