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Электронный компонент: UTC2SA928A

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UTC 2SA928A
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R211-009,A
AUDIO POWER AMPLIFIER
FEATURES
*Collector Dissipation Pc=1 W
*3 W Output Application
*Complement of 2SC2328A
TO-92NL
1
1: EMITTER 2: COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS
(Ta=25
C, unless otherwise specified)
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
-30 V
Collector-emitter voltage
V
CEO
-30 V
Emitter-base voltage
V
EBO
-5 V
Collector dissipation
Pc
1
W
Collector current
Ic
-2
A
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C

ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector-base breakdown voltage
BV
CBO
Ic=-100
A,I
E
=0
-30
V
Collector-emitter breakdown voltage
BV
CEO
Ic=-10mA,I
B
=0 -30
V
Emitter-base breakdown voltage
BV
EBO
I
E
=-1mA,Ic=0 -5
V
Collector cut-off current
I
CBO
V
CB
=-30V,I
E
=0
-100
nA
Emitter cut-off current
I
EBO
V
BE
=-5V,Ic=0
-100
nA
DC current gain(note)
h
FE
V
CE
=-2V,Ic=-500mA 100
320
Base-emitter on voltage
V
BE
(on) V
CE
=-2V,Ic=-500mA
-1
V
Collector-emitter saturation voltage
V
CE
(sat) Ic=-1.5A,I
B
=-0.03A
-2
V
Output capacitace
Cob
V
CB
=-10V, I
E
=0,f=1MHz
48
pF
Current gain bandwidth product
f
T
V
CE
=-2V,Ic=-500mA
120
MHz
CLASSIFICATION OF hFE
RANK O
Y
RANGE 100-200 160-320
UTC 2SA928A
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R211-009,A
TYPICAL CHARACTERISTIC CURVES
0
-2
-4
-6
-8 -10 -12 -14
-16
0
-200
-400
-600
-800
-1000
-1200
-1400
I
B
=-7mA
I
B
=-6mA
I
B
=-5mA
I
B
=-4mA
I
B
=-3mA
I
B
=-2mA
I
B
=-1mA
V
CE
(V),COLLECTOR-EMITTER VOLTAGE
I
C
(
m
A)
,COL
L
E
CT
OR CURRENT
FIG.1 STATIC
CHARACTERISTIC
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0
-200
-400
-600
-800
-1000
-1200
-1400
V
BE
(V),BASE-EMITTER VOLTAGE
I
C
(
m
A)
,COL
L
E
CT
OR CURRENT
FIG.2 BASE-EMITTER ON VLOTAGE
-1.4
V
CE
=-2V
-1
-3
-10 -30 -100 -300 -1000
-3000
10
30
50
100
300
500
1000
Ic(mA),COLLECTOR CURRENT
h
F
E DC CURRENT
GAIN
FIG.3 DC CURRENT GAIN
V
CE
=-2V
-1 -3
-10 -30 -100 -300 -1000
-3000
-0.01
-0.03
-0.05
-0.1
-0.3
-0.5
-1
Ic(mA),COLLECTOR CURRENT
V
CE
(s
at)(V
),S
A
TU
R
A
TIO
N
V
O
LTA
G
E
FIG.4 COLLECTOR-EMITTER SATURATION VOLTAGE
Ic=50l
B
Ta=25C
-3
0
20
40
60
80 100 120 140
160
0
0.2
0.4
0.6
0.8
1.0
1.2
Ta(C),AMBIENT TEMPERATURE
P
D
(W
),P
O
W
E
R
D
I
S
S
IP
A
T
ION
FIG.5 POWER DERATING
-0.3
-0.01
V
CE
(V), COLLECTOR EMITTER VOLTAGE
I
D
(
m
A)
,COL
L
E
CT
OR CURRENT
FIG.6 SAFE OPERATING AREA
-0.5 -1
-0.1
-3 -5 -10
-30
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
-50 -100
Ic(MAX)
Ic(MAX) PULSE
Ta=25C
D.C
OPERATION
1s
1ms
V
CEO
MAX