UTC 2SC1384
NPN EPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R211-005,A
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC 2SC1384 is power amplifier and driver.
FEATURES
*Low collector to emitter saturation voltage V
CE
(sat)
*Complementary pair with 2SA684
TO-92NL
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C, unless otherwise specified)
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Peak Collector Current
Icp
1.5
A
Collector Current (DC)
Ic
1
A
Collector Dissipation (Ta=25
C)
Pc 1
W
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
I
CBO
V
CB
=20V,I
E
=0
0.1
A
Collector-Base Voltage
V
CBO
Ic=10
A,I
E=0
60
V
Collector-Emitter Voltage
V
CEO
Ic=2mA,I
B
=0 50
V
Emitter-Base Voltage
V
EBO
I
E
=10
A,Ic=0
5 V
DC Current Gain
h
FE1
h
FE2
V
CE
=10V, Ic=500mA (note)
V
CE
=5V, I
B
=1A (note)
85
50
160
100
340
Collector-Emitter Saturation Voltage
V
CE
(sat) Ic=0.5A,
I
B
=50mA (note)
0.2
0.4
V
Base-Emitter Saturation Voltage
V
BE
(sat) Ic=0.5A,
I
B
=50mA (note)
0.85
1.2
V
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
B
=-50mA, f=200MHz
200
MHz
Output Capacitance
Cob
V
CB
=10V,I
E
=0,f=1MHz
11
20
pF
Note: Pulse measurement
UTC 2SC1384
NPN EPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R211-005,A
CLASSIFICATION OF hFE1
RANK Q R S
RANGE 85-170 120-240 170-340
TYPICAL PERFORMANCE CHARACTERISTICS
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