UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R209-007,A
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
* Collector current up to 5A
* 2SD965 : Collector-Emitter voltage up to 20 V
* 2SD965A : Collector-Emitter voltage up to 30 V
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
TO-252
1
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
( Ta=25
C )
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
40 V
Collector-emitter voltage
2SD965
2SD965A
V
CEO
20
30
V
Emitter-base voltage
V
EBO
7 V
Collector power dissipation
Pc
1
W
Collector current
Ic
5
A
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-65 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
BV
CBO
Ic=100
A,I
E
=0 40
V
Collector-emitter breakdown voltage
2SD965
2SD965A
BV
CEO
Ic=1mA,I
B
=0
20
30
V
Emitter-base breakdown voltage
BV
EBO
I
E
=10
A,Ic=0 7
V
Collector cut-off current
I
CBO
V
CB
=10V,I
E
=0
100
nA
Emitter cut-off current
I
EBO
V
EB
=7V,Ic=0
100
nA
DC current gain(note)
h
FE
V
CE
=2V,Ic=1mA
V
CE
=2V,Ic=0.5A
V
CE
=2V,Ic=2A
230
150
200
800
Collector-emitter saturation voltage
V
CE
(sat) Ic=3A,
I
B
= 0.1A
1
V
UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R209-007,A
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Current gain bandwidth product
f
T
V
CE
=6V,Ic=50mA
150
MHz
Output capacitance
Cob
V
CB
=20V,I
E
=0
f=1MHz
50
pF
CLASSIFICATION OF hFE2
RANK Q R S
RANGE 230-380 340-600 560-800
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic
,
C
o
lle
c
t
o
r
c
ur
re
n
t
(A
)
0
0.4
0.8
1.2
1.6
2.0
0
1.0
1.5
2.0
2.5
3.0
I
B
=0.5mA
I
B
=1.0mA
I
B
=1.5mA
I
B
=2.0mA
I
B
=2.5mA
I
B
=3.0mA
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
,
D
C
c
urr
e
nt
G
ai
n
10
2
10
1
10
0
10
3
10
4
10
3
10
2
10
1
10
-1
V
CE
=2V
Fig.3 Base-Emitter on Voltage
Ic,Collector current (mA)
10
4
10
3
10
2
10
1
10
0
S
a
tu
ra
ti
on
v
o
l
ta
g
e
(
m
V
)
10
1
10
2
10
3
10
4
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
10
0
10
1
10
2
10
3
Cu
rr
e
n
t
G
a
in
-bandwi
d
th
p
r
od
uct
,
f
T
(MH
z
)
10
0
10
1
10
2
V
CE
=6V
Collector-Base voltage (V)
Cob,
Capaci
t
a
nce
(
p
F)
10
3
10
3
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
f=1MHz
I
E
=0
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