UTC BC817
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-025,A
NPN GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The UTC BC817 is designed for general purpose
medium power amplifiers and switches requiring collector
currents to 1.2A. Sourced from Process 38.
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C, unless otherwise noted)
PARAMETER SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V
CEO
45 V
Collector-Base Voltage
V
CES
50 V
Emitter-Base Voltage
V
EBO
5.0 V
Collector Current -Continuous
Ic
1.5
A
Operating and Storage Junction Temperature Range
T
j,Tstg
-55 to +150
C
Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Note 2: These ratings are based on a maximum junction temperature of 150
C.
Note 3: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS
(Ta=25
C, unless otherwise noted)
CHARACTERISTIC
SYMBOL
MAX (note)
UNIT
Total Device Dissipation
Derate above 25
C
P
D
350
2.8
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
JA
357
C/W
Note: Device mounted on FR-4 PCB 40mm40mm1.5mm.
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise noted)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
MAX
UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V
(BR)CEO
Ic=10mA,
I
B
=0 45
V
Collector-Base Breakdown Voltage
V
(BR)CES
I
C
=100
A,I
E
=0
50 V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10
A, Ic=0
5.0 V
Collector-Cutoff Current
I
CBO
V
CB
=20V
V
CB
=20V,T
A
=150
C
100
5.0
nA
A
UTC BC817
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-025,A
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
MAX
UNIT
ON CHARACTERISTICS
DC Current Gain
h
FE
Ic=100mA, V
CE
=1.0V,
BC817-25
BC817-40
Ic=500mA, V
CE
=1.0V
160
250
40
400
600
Collector-Emitter Saturation Voltage
V
CE
(sat) Ic=500mA,I
B
=50mA
0.7
V
Base-Emitter On Voltage
V
BE
(on) Ic=500mA,
V
CE
=1.0V
1.2
V
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current
Base-Emitter Saturation Voltage vs Collector Current
Base-Emitter ON Voltage vs Collector Current
UTC BC817
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R206-025,A
Collector-Cutoff Current vs Ambient Temperature Collector-Base Capacitance vs Collector-Base Voltage
Gain Bandwidth Product vs Collector Current
Power Dissipation vs Ambient Temperature
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