UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-027,A
SWITCHING AND AMPLIFIER
APPLICATION
FEATURES
*Suitable for automatic insertion in thick and thin-film
circuits.
*Complement to BC856 ... BC860
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C, unless otherwise noted)
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
BC846
BC847 / BC850
BC848 / BC849
V
CBO
80
50
30
V
V
V
Collector-Emitter Voltage
BC846
BC847 / BC850
BC848 / BC849
V
CEO
65
45
30
V
V
Emitter-Base Voltage
BC846 / BC847
BC848 / BC849 / BC850
V
EBO
6
5
V
V
Collector Current (DC)
Ic
100
mA
Collector Dissipation
Pc
310
mW
Junction Temperature
Tj
150
C
Storage Temperature
T
stg
-65 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise noted)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
Collector Cut-Off Current
I
CBO
V
CB
=30V, I
E
=0
15
nA
DC Current Gain
h
FE
V
CE
=5.0V, Ic=2.0mA
110
800
Collector-Emitter Saturation
Voltage
V
CE
(sat) Ic=10mA,I
B
=0.5mA
Ic=100mA,I
B
=5.0mA
90
200
250
600
mV
mV
Collector-Base Saturation Voltage
V
BE
(sat) Ic=10mA,I
B
=0.5mA
Ic=100mA,I
B
=5.0mA
700
900
mV
mV
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-027,A
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
Base-Emitter On Voltage
V
BE
(on) V
CE
=5.0V,Ic=2.0mA
V
CE
=5.0V,Ic=10mA
580 660 700
720
mV
mV
Current Gain Bandwidth Product
f
T
V
CE
=5.0V,Ic=10mA
f=100MHz
300 MHz
Output Capacitance
Cob
V
CB
=10V, I
E
=0, f=1.0MHz
3.5
6
pF
Input Capacitance
Cib
V
EB
=0.5V, I
C
=0, f=1.0MHz
9
pF
Noise Figure:
BC846/BC847/BC848
BC849/BC850
BC849
BC850
NF
V
CE
=5V, Ic=200
A,
f=1KHz, R
G
=2K
V
CE
=5V, I
C
=200
A,
R
G
=2K
, f=30~15000Hz
2
1.2
1.4
1.4
10
4
4
3
dB
dB
dB
dB
Classification of h
FE
RANK A B
C
RANGE 110-220
200-450
420-800
Marking Code
P/N RANK MARK RANK MARK RANK MARK
BC846
A 8AA B 8AB C 8AC
BC847
A 8BA B 8BB C 8BC
BC848 A 8CA B 8CB C 8CC
BC849 A 8DA B 8DB C 8DC
BC850
A 8EA B 8EB C 8EC
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R206-027,A
TYPICAL CHARACTERISTICS
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