BC856/BC857
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-028,A
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for automatic insertion in thick and thin-film
circuits
*Complement to BC846 / BC847
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C, unless otherwise noted)
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
BC856
BC857
V
CBO
-80
-50
V
V
Collector-Emitter Voltage
BC856
BC857
V
CEO
-65
-45
V
V
Emitter-Base Voltage
V
EBO
-5 V
Collector Dissipation
Pc
310
mW
Collector Current (DC)
Ic
-100
mA
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-65 ~ 150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise noted)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector Cut-Off Current
I
CBO
V
CB
=-30V, I
E
=0
-15
nA
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-2mA 110
800
Collector-Emitter Saturation Voltage
V
CE
(sat) Ic=-10mA,I
B
=-0.5mA
Ic=-100mA,I
B
=-5mA
-90
-250
-300
-650
mV
mV
Base-Emitter Saturation Voltage
V
BE
(sat)
Ic=-10mA,I
B
=-0.5mA
Ic=-100mA,I
B
=-5mA
-700
-900
mV
mV
Base-Emitter On Voltage
V
BE
(on)
V
CE
=-5V,Ic=-2mA
V
CE
=-5V,Ic=-10mA
-600
-660 -750
-800
mV
mV
Current Gain Bandwidth Product
f
T
V
CE
=-5V,Ic=-10mA
f=100MHz
150
MHz
BC856/BC857
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-028,A
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Output Capacitance
Cob
V
CB
=-10V,I
E
=0,f=1MHz
6
pF
Noise Figure
NF
V
CE
=-5V, IC=-200
A
f=1KHz, R
G
=2K
2
10
dB
Classification of h
FE
RANK A B
C
RANGE 110-220
200-450
420-800
Marking Code
TYPE 856A 856B 856C 857A 857B 857C
MARK 9AA 9AB 9AC 9BA
9BB 9BC
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