UTC BT150
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-008,B
SCRs
DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in
applications requiring high bidirectional blocking voltage
capability and high thermal cycling performance. Typical
applications include motor control, industrial and domestic
lighting, heating and static switching.
SYMBOL
K
A
G
TO-220
1
1: CATHODE 2: ANODE 3: GATE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL
RATING
UNIT
Repetitive peak off-state voltages
BT150-500
BT150-650
BT150-800
V
DRM
, V
RRM
500*
650*
800
V
Average on-state current
(half sine wave; T
mb
113 C)
I
T(AV)
2.5
A
RMS on-state current
(all conduction angles)
I
T(RMS)
4 A
Non-repetitive peak on-state current
(half sine wave; T
j
= 25 C prior to surge)
t = 10 ms
t = 8.3 ms
I
TSM
35
38
A
I
2
t for fusing
(t = 10 ms)
I
2
t 6.1
A
2
s
Repetitive rate of rise of on-state current after triggering
(I
TM
= 10 A; I
G
= 50 mA; d
IG
/dt = 50 mA/ms)
dI
T
/dt
50
A/s
Peak gate current
I
GM
2
A
Peak gate voltage
V
GM
5
V
Peak reverse gate voltage
V
RGM
5
V
Peak gate power
(over any 20 ms period)
P
GM
5
W
Average gate power
P
G(AV)
0.5
W
Storage temperature
T
stg
-40~150
Operating junction temperature
T
j
125**
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15A/
s.
UTC BT150
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-008,B
** Note: operation above 110 may require the use of a gate to cathode resistor of 1k or less.
THERMAL RESISTANCES
PARAMETER SYMBO
L
MIN TYP MAX UNIT
Thermal resistance Junction to mounting base
R
th j-mb
2.5 K/W
Thermal resistance Junction to ambient
In free air
R
th j-a
60 K/W
STATIC CHARACTERISTICS
(T
j
=25
C,unless otherwise stated)
PARAMETER SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Gate trigger current
I
GT
V
D
= 12 V; I
T
= 0.1 A
15
200
mA
Latching current
I
L
V
D
= 12 V; I
GT
= 0.1 A
0.17
10
mA
Holding current
I
H
V
D
= 12 V; I
GT
= 0.1 A
0.10
6
MA
On-state voltage
V
T
I
T
= 5 A
1.23
1.8
V
Gate trigger voltage
V
GT
V
D
= 12 V; I
T
= 0.1 A
V
D
= VDRM(max) ; I
T
= 0.1 A; T
j
= 110 C
0.1
0.4
0.2
1.5
V
Off-state leakage current
I
D
, I
R
V
D
= V
DRM(max)
; V
R
= VRRM(max) ;
T
j
= 125 C
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
(T
j
=25
C,unless otherwise stated)
PARAMETER SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Critical rate of rise of
off-state voltage
dV
D
/dt
V
DM
= 67% V
DRM(max)
; T
j
= 125 C;
exponential waveform;
R
GK
= 100
50
V/s
Gate controlled turn-on
time
t
gt
I
TM
= 10 A; V
D
= V
DRM(max)
; I
G
= 5mA;
dI
G
/dt = 0.2A/s
2
s
Circuit commutated
Turn-off time
t
q
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
TM
= 8A; V
R
= 10V; dI
TM
/dt = 10 A/s;
dV
D
/dt = 2V/s; R
GK
= 1k
100 s
UTC BT150
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-008,B
1ms
100us
10us
1000
T/s
Fig.1. Maximum on-state dissipation,P
tot
,
versus
average on-state current,I
T(AV)
,
where
a=form factor=I
T(RMS)
/I
T(AV)
.
10
100
2.5
0
6
IF(AV)/A
0
10ms
110
117.5
115
Ptot/W
Tmb(max)/C
ITSM/A
ITSM/A
dI
T
/dt limit
12
6
surge duration /S
8
10
4
0
Fig4.Maximum Permissible non-repetitive peak
on-state current I
TSM
,versus number of cycles,for
sinusoidal currents,f=50Hz.
IT(RMS)/A
0.01
0.1
1
10
Fig.2.Maximum Permissible non-repetitive peak
on-state Current I
TSM
,versus pulse width t
p
,
for
sinusoidal currents,t
p
10ms
100
150
-50
50
0
1.6
0.8
Tj/
1.2
1.4
1
0.6
0.4
Fig. 5.Maximum permissible repetitive rms on-state
current l
T(RMS)
,versus surge duration,for sinusoidal
currents,f=50Hz;T
mb
113
V
GT
(25)
V
GT
(Tj)
4
5
2
0.5
112.5
1
3
1.5
4
2.8
2.2
1.9
a=1.57
conduction
angle
degrees
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
Number of half cycles at 50Hz
20
0
10
100
1
I
T
time
I
TSM
Tj initial=25max
40
30
10
1000
T
I
T
time
I
TSM
Tj initial=25max
100
150
-50
50
0
5
3
Tmb/C
0
4
IT(RMS)/A
113
Fig.3. Maximum permissible rms current lT(RMS),
versus mounting base temperature T
mb
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/V
GT
(25,versus junction temperature T
j
.
0
50
100
150
2
1
3
122.5
120
125
T
T
2
2
1
UTC BT150
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-008,B
1.5
0
1
0.5
2
VT/V
10
8
6
0
Fig.10.Typical and maximum on-state characteristic.
IT/A
100
150
-50
50
0
3
1
Tj/C
2
2.5
1.5
0.5
0
Fig. 7.Normalised gate trigger Current
I
GT
(T
j
)/I
GT
(25),versus junction temperature T
j
.
I
GT
(25)
I
GT
(Tj)
typ
max
100
150
-50
50
0
3
1
Tj/C
2
2.5
1.5
0.5
0
Fig.8.Normalised latching Current I
L
(T
j
)/I
L
(25),
versus junction temperature T
j
I
L
(25)
I
L
(Tj)
100
150
-50
50
0
3
1
Tj/C
2
2.5
1.5
0.5
0
Fig. 9.Normalised holding current I
H
(T
j
)/I
H
(25),
versus junction temperature T
j
.
I
H
(25)
I
H
(Tj)
100
150
50
0
1000
Tj/C
100
1
Fig.12.Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
dVD/dt(V/us)
Tj=125
Tj=25
Vo=1.26V
Rs=0.099
RGK=100
2
10
1ms
0.1ms
10us
0.1
tp/s
Fig.11.Transient thermal impedance Z
thj-mb
,versus
pulse width t
p
.
0.01
10ms
0.1s
Zth j-mb(K/W)
1s
10s
1
10
tp
t
P
D
3
2.5
2
4
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