UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R203-017,A
SILICON NPN TRIPLE DIFFUSED
MESA TYPE
APPLICATIONS
* Electronic transformers, power swiching circuit
TO-220
1
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
700 V
Collector-emitter voltage
V
CEO
400 V
Emitter-base voltage
V
EBO
9 V
Collector current
Ic
1.5
A
Collector power dissipation
Pc
40
W
Junction Temperature
T(v
j)
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Tc=25
C)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector-emitter sustaining voltage
V
CEO(sus)
Ic=10mA,
I
B
=0 400
V
Collector-base breakdown voltage
V
(BR)CBO
I
E
=0, I
C
=1mA 700
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=1mA, I
C
=0 9
V
Collector cut-off current
I
CBO
V
CB
=700V, I
E
=0
100
A
Collector-emitter cut off current
I
CEO
V
CE
=400V, I
B
=0
50
A
Emitter-base cut-off current
I
EBO
V
EB
=7V, Ic=0
10
A
Small-signal current gain
h
FE
V
CE
=10V, Ic=0.5A
8
40
Collector-emitter saturation voltage
V
CE
(sat1)
V
CE
(sat2)
Ic=1.5A, I
B
=0.5A
Ic=0.5A, I
B
=0.1A
3
0.8
V
Base-emitter saturation voltage
V
BE
(sat) Ic=0.5A,
I
B
=0.1A
1
V
Fall time
tf
Ic=1A
0.7
S
Storage time
ts
I
B1
=-1 I
B2
=0.2A
4
S
Frequency characteristics
f
T
V
CE
=10V, I
C
=0.1A, f=1MHz
4
MHz
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