UTC MMBTA13
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R206-006,B
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MMBTA13 is a Darlington transistor.
FEATURES
*Collector-Emitter Voltage: V
CES
= 30V
*Collector Dissipation: Pc (mas) = 350 mW
MARKING
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C)
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CES
30 V
Emitter-Base Voltage
V
EBO
10 V
Collector Dissipation
Pc
350
mW
Collector Current
Ic
500
mA
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
MAX
UNIT
Collector-Emitter Breakdown Voltage
BV
CES
Ic=100
A,I
B
=0 30
V
Collector Cut-Off Current
I
CBO
V
CB
=30V,I
E
=0
100
nA
Emitter Cut-Off Current
I
EBO
V
EB
=10V,Ic=0
100
nA
DC Current Gain
h
FE
V
CE
=5V,Ic=100mA 10000
Collector-Emitter Saturation Voltage
V
CE
(sat) Ic=100mA,I
B
=0.1mA
1.5 V
Base-Emitter on Voltage
V
BE
(on) V
CE
=5V,Ic=100mA
2.0 V
Current Gain Bandwidth Product
f
T
V
CE
=5V,Ic=10mA,
f=100MHz
125 MHz
Pulse test: Pulse Width<300
s, Duty Cycle=2%
1M
UTC MMBTA13
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R206-006,B
TYPICAL CHARACTERISTICS
I(tot)
mA
0.1
10
100k
Current Gain & Collector Current
1
100
1000
10k
Collector Current (mA)
1000k
hFE
hFE@V
CE
=5V
I(tot)
mA
0.1
10
1000
On Voltage & Collector Current
1
100
1000
100
Collector Current (mA)
10000
O
n
Vo
l
t
a
g
e
(m
V)
V
BE
(on)@V
CE
=5V
I(tot)
mA
10
100
Cutoff Frequency & Collector Current
1
100
1000
10
Collector Current (mA)
1000
C
u
to
ff Fre
q
u
e
n
c
y
(M
H
z
)
V
CE
=5V
I(tot)
mA
10
1000
Saturation Voltage & Collector Current
1
100
1000
100
Collector Current (mA)
10000
Sa
tu
ra
ti
o
n
Vo
l
t
a
g
e
(
m
V)
V
BE
(sat)@IC=100I
B
V
CE
(sat)@IC=100I
B
I(tot)
mA
10
Capacitance & Reverse-Biased Voltage
1
100
1
Reverse-Biased Voltage(V)
10
C
apac
it
anc
e (
p
F)
Cob
I(tot)
mA
10
Safe Operating Area
1
100
1
Forward Voltage-V
CE
(V)
10
C
o
l
l
e
c
to
r Cu
rre
n
t
-Ic
(m
A)
P
T
=100ms
1000
100
P
T
=1s
P
T
=1ms
UTC MMBTA13
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R206-006,B
I(tot)
mA
25
Power-Dissipation
vs Ambient Temperature
0
50
0
P
D
-
P
ow
er
D
i
s
s
i
pat
ion(
W
)
100
75
125
150
0.25
0.5
0.75
1
Temperature ()
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