UTC MMBTA92
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-005,A
HIGH VOLTAGE PNP
TRANSISTOR
DESCRIPTION
The UTC MMBTA92 are high voltage PNP
transistors, designed for telephone signal switching
and for high voltage amplifier.
FEATURES
* High Collector-Emitter voltage:
V
CEO
=-300V
*Collector Dissipation:
Pc(max)=350mW
MARKING
SOT-23
1
2
3
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Operating temperature range applies unless otherwise specified )
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-300 V
Collector-Emitter Voltage
V
CEO
-300 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Dissipation(Ta=25
C
)
Pc 350
mW
Collector Current
Ic
-500
mA
Collector Dissipation(Tc=25
C
)
Derate Above 25
C
Pc 1.5
12
W
mW/
C
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BV
CBO
Ic=-100
A,I
E
=0
-300
V
Collector-Emitter Breakdown Voltage
BV
CEO
Ic=-1mA,I
B
=0 -300
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=-100
A,Ic=0
-5
V
Collector Cut-Off Current
I
CBO
V
CB
=-200V,I
E
=0
-0.25
A
Emitter Cut-Off Current
I
EBO
V
EB
=-3V,Ic=0
-0.10
A
DC Current Gain(note)
h
FE
V
CE
=-10V,Ic=-1mA
V
CE
=-10V,Ic=-10mA
V
CE
=-10V,Ic=-30mA
60
80
80
Collector-Emitter Saturation Voltage V
CE
(sat)1
Ic=-20mA,I
B
=-2mA
-0.5
V
Base-Emitter Saturation Voltage
V
BE
(sat)1
Ic=-20mA,I
B
=-2mA
-0.90
V
2D
UTC MMBTA92
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-005,A
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Current Gain Bandwidth Product
fT
V
CE
=-20V,Ic=-10mA,
f=100MHz
50
MHz
Collector Base Capacitance
Ccb
V
CB
=-20V,IE=0
f=1MHz
6
pF
Note:Pulse test:PW<300
s,Duty Cycle<2%, V
CE(SAT)1
<200mV(Class SIN)
TYPICAL PERFORMANCE CHARACTERISTICS
-10
0
-10
1
-10
2
-10
3
-10
4
10
0
10
1
10
2
10
3
DC cu
r
r
e
n
t
G
a
i
n
,H
FE
Collector current, Ic(mA)
Fig.1 DC Current Gain
-10
0
-10
1
-10
2
-10
3
-10
4
Collector current, Ic(mA)
Fig.2 Saturation Voltage
VC
E(s
a
t
)
,
VBE(s
a
t
)
(m
V)
V
CE
=-10V
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
-10
-1
-10
0
-10
1
-10
2
Collector-Base voltage(V)
C
IB
(pF
)
,
C
CB
(pF
)
10
1
10
2
Fig.3 Capacitance
C
IB
C
CB
-10
0
-10
1
-10
2
-10
3
-10
1
-10
3
-10
1
-10
2
Collector-Emitter voltage ( v)
Co
l
l
e
cto
r
cu
r
r
e
n
t, Ic(
m
A)
Fig.4 Active-region safe
operating area
1.
5W
Ther
m
al
lim
ita
tio
n T
c=
25
C
625mW Thermal
limitation Ta=25C
bonding breakdown
limitation Tj=150C
DC
1.0
m
s
0
.
1
m
s
MPSA93
MPSA92
Fig.5 Current Gain
Bandwidth product
10
1
10
2
10
3
C
u
rrent
gain bandw
idt
h
produc
t
(
M
H
z
)
Collector current, Ic(mA)
-10
0
-10
1
-10
2
V
CE
=-20V
f=100MHz
-10
4
-10
3
-10
2
-10
1
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