UTC PN2222A
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-033,A
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
*This device is for use as a medium power amplifier and
switch requiring collector currents up to 500mA. Sourced
from Process 19.
TO-92
1
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C, unless otherwise specified)
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
75 V
Collector-emitter voltage
V
CEO
40 V
Emitter-base voltage
V
EBO
6 V
Collector current
Ic
1
A
Collector dissipation
Pc
625
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C
Note: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
ELECTRICAL CHARACTERISTICS
(Ta=25
C, unless otherwise specified)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Collector-base breakdown voltage
V
(BR)CBO
Ic=10
A, I
E
=0
75
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=10mA, I
B
=0 40
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=10
A, Ic=0
6 V
Collector cutoff current
I
CEX
V
CE
=60V,V
EB(OFF)
=3.0V
10
nA
Collector cutoff current
I
CBO
V
CB
=60V,I
E
=0
V
CB
=60V,I
E
=0, T
A
=150
C
0.01
10
A
A
Emitter cutoff current
I
EBO
V
EB
=3.0V,I
C
=0
10
nA
Base cutoff current
I
BL
V
CE
=60V, V
EB(OFF)
=3.0V 20
nA
UTC PN2222A
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R201-033,A
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
ON CHARACTERISTICS
DC current gain
h
FE
Ic=0.1mA, V
CE
=10V
Ic=1.0mA, V
CE
=10V
Ic=10mA, V
CE
=10V
Ic=10mA, V
CE
=10V, T
A
=-55
C
Ic=150mA, V
CE
=10V*
Ic=150mA, V
CE
=1.0V*
Ic=500mA, V
CE
=10V*
35
50
75
35
100
50
40
300
Collector-emitter saturation voltage*
V
CE
(sat) Ic=150mA,
I
B
=15mA
Ic=500mA, I
B
=50mA
0.3
1.0
V
V
Base-emitter saturation voltage*
V
BE
(sat) Ic=150mA,
I
B
=15mA
Ic=500mA, I
B
=50mA
0.6
1.2
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
Current gain-Bandwidth product
f
T
Ic=20mA,
V
CE
=20V, f=100MHz
300
MHz
Output capacitance
Cobo
V
CB
=10V, I
E
=0, f=100kHz
8.0
pF
Input capacitance
Cibo
V
EB
=0.5V, I
C
=0, f=100kHz
25
pF
Collector base time constant
rb'Cc
I
C
=20mA, V
CB
=20V, f=31.8MHz
150
pS
Noise figure
NF
I
C
=100
A, V
CE
=10V, Rs=1.0k
,
f=1.0kHz
4.0
dB
Real part of common-emitter high
frequency input impedance
Re(hje) I
C
=20mA, V
CB
=20V, f=300MHz
60
SWITCHING CHARACTERISTICS
Delay time
td
Vcc=30V, V
BE(OFF)
=0.5V, 10
ns
Rise time
tr
I
C
=150mA, I
B1
=15mA
25
ns
Storage time
ts
Vcc=30V, I
C
=150mA,
225
ns
Fall time
tf
I
B1
= I
B2
=15mA
60
ns
THERMAL CHARACTERISTICS (TA=25
C, unless otherwise noted)
Total Device Dissipation
Derate above 25
C
P
D
625
5.0
mW
mW/
C
Thermal resistance, junction to Case
R
JC
83.3
C/W
Thermal resistance, junction to
Ambient
R
JA
200
C/W
*Pulse test: Pulse Width
300s, Duty Cycle 2.0%
UTC PN2222A
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R201-033,A
TEST CIRCUITS
FIG.1 Saturated Turn-On Switching Time
FIG.2 Saturated Turn-Off Switching Time
TYPICAL CHARACTERISTICS
UTC PN2222A
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R201-033,A
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