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Электронный компонент: UT62257C

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UTRON
UT62257C
Rev. 1.1
32K X 8 BIT LOW POWER CMOS SRAM
UTRON TECHNOLOGY INC.
P80062
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
1
REVISION HISTORY
REVISION DESCRIPTION DATE
Preliminary Rev. 0.1 Original.
Jun 7,2001
Rev. 1.0
1.TRUTH TABLE
2.DC ELECTRICAL CHARACTERISTICS
Jul 19,2001
Rev. 1.1
Add order information for lead free product
May15,2003
UTRON
UT62257C
Rev. 1.1
32K X 8 BIT LOW POWER CMOS SRAM
UTRON TECHNOLOGY INC.
P80062
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
2
FEATURES
Access time : 35/70ns (max.)
Low power consumption:
Operating : 40 mA (typical.)
Standby : 3mA (typical) normal
2uA (typical) L-version
1uA (typical) LL-version
Single 5V power supply
All inputs and outputs are TTL compatible
Fully static operation
Three state outputs
Data retention voltage : 2V (min.)
Package : 28-pin 600 mil PDIP
28-pin 330 mil SOP
28-pin 8mmx13.4mm STSOP
FUNCTIONAL BLOCK DIAGRAM
DECODER
I/O DATA
CIRCUIT
CONTROL
CIRCUIT
32K X 8
MEMORY
ARRAY
COLUMN I/O
A0-A14
Vcc
Vss
I/O1-I/O8
CE
WE
CE2
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0 - A14
Address Inputs
I/O1 - I/O8
Data Inputs/Outputs
CE
CE2
Chip Enable Inputs
WE
Write Enable Input
V
CC
Power
Supply
V
SS
Ground

GENERAL DESCRIPTION
The UT62257C is a 262,144-bit low power CMOS
static random access memory organized as 32,768
words by 8 bits. It is fabricated using high
performance, high reliability CMOS technology.

The UT62257C is designed for high-speed and low
power application. With 2 chip controls ( CE
CE2 ), it
is easy to design memory systems with power-down
and capacity expansion in the application circuits. It
is particularly well suited for battery back-up
nonvolatile memory application.

The UT62257C operates from a single 5V power
supply and all inputs and outputs are fully TTL
compatible.
PIN CONFIGURATION
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
Vcc
A8
A9
A11
A10
I/O8
I/O7
I/O6
I/O5
I/O4
I/O3
Vss
UT62257C
PDIP/SOP
28
14
13
12
11
10
9
8
7
6
5
4
3
2
1
17
16
15
20
19
18
22
23
24
25
26
27
21
CE
W
E
A13
A14
CE2
I/O4
A11
A9
A8
A13
I/O3
A10
A14
A12
A7
A6
A5
Vcc
I/O8
I/O7
I/O6
I/O5
Vss
I/O2
I/O1
A0
A1
A2
A4
A3
UT62257C
STSOP
28
14
13
12
11
10
9
8
7
6
5
4
3
2
1
17
16
15
20
19
18
22
23
24
25
26
27
21
WE
CE
CE2
UTRON
UT62257C
Rev. 1.1
32K X 8 BIT LOW POWER CMOS SRAM
UTRON TECHNOLOGY INC.
P80062
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
3
ABSOLUTE MAXIMUM RATINGS*
PARAMETER SYMBOL
RATING
UNIT
Terminal Voltage with Respect to V
SS
V
TERM
-0.5 to +7.0
V
Operating Temperature
T
A
0 to +70
Storage Temperature
T
STG
-65 to +150
Power Dissipation
P
D
1
W
DC Output Current
I
OUT
50
mA
Soldering Temperature (under 10 sec)
Tsolder
260
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
CE
CE2
WE
I/O OPERATION
SUPPLY CURRENT
H
X
X
High - Z
I
SB
, I
SB1
Standby
X
L
X
High - Z
I
SB
, I
SB1
Read L
H
H
D
OUT
I
CC
, I
CC
1, I
CC
2
Write L
H
L
D
IN
I
CC
, I
CC
1, I
CC
2
Note: H = VIH, L=VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS (V
CC
= 5V10%, T
A
= 0
to 70
)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP. MAX. UNIT
Input High Voltage
V
IH
*1
2.2
- V
CC
+0.5 V
Input Low Voltage
V
IL
*2
-
0.5
-
0.8
V
Input Leakage Current
I
LI
V
SS
V
IN
V
CC
-
1
- 1
A
Output Leakage
Current
I
LO
V
SS
V
I/O
V
CC
CE
=V
IH
or CE2 = V
IL
-
1
- 1
A
Output High Voltage
V
OH
I
OH
= - 1mA
2.4
- - V
Output Low Voltage
V
OL
I
OL
= 4mA
-
-
0.4
V
- 35
-
40
50
mA
I
CC
Cycle time=Min., I
I/O
= 0mA ,
CE
=V
IL
, CE2 = V
IH
- 70
-
30
40
mA
I
CC
1
Cycle time=1s,100%duty,I
I/O
=0mA,
CE
= 0.2V ; CE2 = V
CC
-0.2V ,
other pins at 0.2V or V
CC
-0.2V
- - 10
mA
Operating Power
Supply Current


I
CC
2
Cycle time=500ns,100%duty,I
I/O
=0mA,
CE
= 0.2V ; CE2 = V
CC
-0.2V ,
other pins at 0.2V or V
CC
-0.2V
- - 20
mA
I
SB
CE
=V
IH
or CE2 = V
IL
1 10
mA
I
SB1
CE
V
CC
-0.2V
CE2
V
CC
-0.2V
normal -
0.3 5 mA
I
SB
CE
=V
IH
or CE2 = V
IL
-L/-LL - - 3 mA
I
SB1
CE
V
CC
-0.2V
-L -
2 100 A
Standby Power
Supply Current
CE2
V
CC
-0.2V
-LL
-
1
40
A
Notes:
1. Overshoot : Vcc+2.0v for pulse width less than 10ns.
2. Undershoot : Vss-2.0v for pulse width less than 10ns.
3. Overshoot and Undershoot are sampled, not 100% tested.
UTRON
UT62257C
Rev. 1.1
32K X 8 BIT LOW POWER CMOS SRAM
UTRON TECHNOLOGY INC.
P80062
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
4
CAPACITANCE (TA=25
, f=1.0MHz)

PARAMETER
SYMBOL
MIN.
MAX
UNIT
Input Capacitance
C
IN
- 8
pF
Input/Output Capacitance
C
I/O
- 10
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS

Input Pulse Levels
0V to 3.0V
Input Rise and Fall Times
5ns
Input and Output Timing Reference Levels
1.5V
Output Load
C
L
= 100pF, I
OH
/I
OL
= -1mA/4mA
AC ELECTRICAL CHARACTERISTICS (V
CC
= 5V10% , T
A
= 0
to 70
)

(1) READ CYCLE

PARAMETER
SYMBOL
UT62257C-35
UT62257C-70
UNIT
MIN. MAX. MIN. MAX.
Read Cycle Time
t
RC
35 - 70 - ns
Address Access Time
t
AA
- 35 - 70
ns
Chip Enable Access Time
t
ACE
- 35 - 70
ns
Output Enable Access Time
t
OE
- 25 - 35
ns
Chip Enable to Output in Low Z
t
CLZ*
10 - 10 - ns
Output Enable to Output in Low Z
t
OLZ*
5 - 5 - ns
Chip Disable to Output in High Z
t
CHZ*
- 25 - 35
ns
Output Disable to Output in High Z
t
OHZ*
- 25 - 35
ns
Output Hold from Address Change t
OH
5 - 5 -
ns

(2) WRITE CYCLE
PARAMETER
SYMBOL
UT62257C-35
UT62257C-70
UNIT
MIN. MAX. MIN. MAX.
Write Cycle Time
t
WC
35 - 70 - ns
Address Valid to End of Write
t
AW
30 - 60 - ns
Chip Enable to End of Write
t
CW
30 - 60 - ns
Address Set-up Time
t
AS
0 - 0 -
ns
Write Pulse Width
t
WP
25 - 50 - ns
Write Recovery Time
t
WR
0 - 0 -
ns
Data to Write Time Overlap
t
DW
20 - 30 - ns
Data Hold from End of Write Time
t
DH
0 - 0 -
ns
Output Active from End of Write
t
OW*
5 - 5 - ns
Write to Output in High Z
t
WHZ*
- 15 - 25 ns
*These parameters are guaranteed by device characterization, but not production tested.
UTRON
UT62257C
Rev. 1.1
32K X 8 BIT LOW POWER CMOS SRAM
UTRON TECHNOLOGY INC.
P80062
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
5
TIMING WAVEFORMS
READ CYCLE 1
(Address Controlled)
(1,2)
t
RC
t
AA
Data Valid
Address
Dout
t
OH
t
OH
Previous data valid

READ CYCLE 2
(
CE
and
CE2
Controlled)
(1,3,4,5)
t
RC
t
AA
t
ACE
t
CLZ
t
OH
High-Z
Data Valid
High-Z
t
CHZ
Address
CE2
Dout
CE
Notes :
1.
WE
is high for read cycle.
2. Device is continuously selected CE =low
,
CE2=high
.
3. Address must be valid prior to or coincident with CE =low
,
CE2=high; otherwise t
AA
is the limiting parameter.
4. t
CLZ
, t
OLZ
, t
CHZ
and t
OHZ
are specified with C
L
=5pF. Transition is measured
500mV from steady state.
5. At any given temperature and voltage condition, t
CHZ
is less than t
CLZ
.