2N/PN/SST4117A Series
Vishay Siliconix
Document Number: 70239
S-41231--Rev. G, 28-Jun-04
www.vishay.com
1
N-Channel JFETs
2N4117A PN4117A SST4117
2N4118A PN4118A SST4118
2N4119A PN4119A SST4119
PRODUCT SUMMARY
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (
m
S) I
DSS
Min (
m
A)
4117
-0.6 to -1.8
-40
70
30
4118
-1 to -3
-
40
80
80
4119
-2 to -6
-40
100
200
FEATURES
BENEFITS
APPLICATIONS
D Ultra-Low Leakage: 0.2 pA
D Very Low Current/Voltage Operation
D Ultrahigh Input Impedance
D Low Noise
D Insignificant Signal Loss/Error Voltage
with High-Impedance Source
D Low Power Consumption (Battery)
D Maximum Signal Output, Low Noise
D High Sensitivity to Low-Level Signals
D High-Impedance Transducer
Amplifiers
D Smoke Detector Input
D Infrared Detector Amplifier
D Precision Test Equipment
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.
The hermetically sealed TO-206AF package allows full
military processing per MIL-S-19500 (see Military
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
G
S
TO-206AF
(TO-72)
D
Top View
2N4117A
2N4118A
2N4119A
C
1
2
3
4
D
G
Top View
PN4117A
PN4118A
PN4119A
TO-226AA
(TO-92)
S
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST4117 (T7)*
SST4118 (T8)*
SST4119 (T9)*
*Marking Code for TO-236
For applications information see AN105.
2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
2
Document Number: 70239
S-41231--Rev. G, 28-Jun-04
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage
-40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature :
(2N Prefix)
-65 to 175_C
. . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)
-55 to 150_C
. . . . . . . . . . . . .
Operating Junction Temperature :
(2N Prefix)
-55 to 175_C
. . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)
-55 to 150_C
. . . . . . . . . . . . .
Lead Temperature (
1
/
16
" from case for 10 sec.)
300_C
. . . . . . . . . . . . . . . . . . .
Power Dissipation (case 25_C) :
(2N Prefix)
a
300 mW
. . . . . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)
b
350 mW
. . . . . . . . . . . . . . . .
Notes
a.
Derate 2 mW/_C above 25_C
b.
Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
4117
4118
4119
Parameter
Symbol
Test Conditions
Typ
a
Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= -1 mA , V
DS
= 0 V
-70
-40
-
40
-40
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 nA
-0.6
-1.8
-1
-3
-2
-6
V
Saturation Drain Current
I
DSS
V
DS
= 10 V, V
GS
= 0 V
30
90
80
240
200
600
mA
V
GS
= -20 V
V
DS
= 0 V
-0.2
-1
-1
-1
pA
G t R
C
t
I
V
GS
= -20 V
V
DS
= 0 V
T
A
= 150_C
2N
-0.4
-2.5
-2.5
-2.5
nA
Gate Reverse Current
I
GSS
V
GS
= -10 V
PN
-0.2
-1
-1
-1
pA
V
GS
= -10 V
V
DS
= 0 V
SST
-0.2
-10
-10
-10
pA
V
GS
= -10 V
V
DS
= 0 V
T
A
= 100_C
PN/SST
-0.03
-2.5
-2.5
-2.5
nA
Gate Operating Current
b
I
G
V
DG
= 15 V, I
D
= 30 mA
-0.2
pA
Drain Cutoff Current
b
I
D(off)
V
DS
= 10 V, V
GS
= -8 V
0.2
pA
Gate-Source Forward Voltage
b
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 10 V, V
GS
= 0 V
70
210
80
250
100
330
mS
Common-Source
Output Conductance
g
os
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
3
5
10
mS
Common-Source
C
i
2N/PN
1.2
3
3
3
Common-Source
Input Capacitance
C
iss
V
DS
= 10 V
V
GS
= 0 V
SST
1.2
pF
Common-Source
C
V
GS
= 0 V
f = 1 MHz
2N/PN
0.3
1.5
1.5
1.5
pF
Common-Source
Reverse Transfer Capacitance
C
rss
f = 1 MHz
SST
0.3
Equivalent Input Noise Voltage
b
e
n
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
15
nV/
Hz
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NT
b.
This parameter not registered with JEDEC.
2N/PN/SST4117A Series
Vishay Siliconix
Document Number: 70239
S-41231--Rev. G, 28-Jun-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Gate Leakage Current
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Output Characteristics
1000
0
-5
-4
-3
-2
-1
800
0
0
6
30
g
fs
I
DSS
T
A
= 25_C
100 mA
I
GSS
@ 25_C
100 mA
Output Characteristics
500
400
300
100
0
-0.5 V
-1.0 V
-2.0 V
-1.5 V
V
GS
= 0 V
15
0
-3
-5
-4
-2
-1
12
9
6
3
0
0.01
0.1
1
200
160
120
40
0
5
4
3
2
1
0
r
DS
@ I
D
= 10 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
r
DS
g
os
T
A
= -55_C
125_C
V
DS
= 10 V
f = 1 kHz
100
0
16
8
4
20
80
60
20
0
V
GS
= 0 V
-0.5 V
-0.4 V
-0.3 V
-0.2 V
-0.1 V
V
GS(off)
- Gate-Source Cutoff Voltage (V)
V
DS
- Drain-Source Voltage (V)
V
DG
- Drain-Gate Voltage (V)
I
D
- Drain Current (mA)
V
GS(off)
- Gate-Source Cutoff Voltage (V)
V
DS
- Drain-Source Voltage (V)
600
400
200
12
18
24
80
25_C
V
GS(off)
= -0.7 V
V
GS(off)
= -2.5 V
200
40
12
0
16
8
4
20
12
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
300
240
180
120
60
0
10 mA
0.1 pA
1 pA
10 pA
100 pA
1 nA
I
GSS
@ 125_C
V
GS(off)
= -2.5 V
10 mA
V
GS(off)
= -2.5 V
I
DS
S
-
Saturation Drain Current (
A)
g
fs
-
Forward T
ransconductance (
S)
g
os
-
Output Conductance (
S)
g
fs
-
Forward T
ransconductance (
S)
I
G
-
Gate Leakage
I
D
-
Drain Current (
A)
I
D
-
Drain Current (
A)
T
A
= 125_C
r
DS
(
on)
-
Drain-Source On-Resistance (k
W
)
2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
4
Document Number: 70239
S-41231--Rev. G, 28-Jun-04
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
300
240
180
60
0
Transconductance vs. Gate-Source Voltage
Transfer Characteristics
Transconductance vs. Gate-Source Voltage
Transfer Characteristics
Common-Source Input Capacitance
vs. Gate-Source Voltage
Circuit Voltage Gain vs. Drain Current
500
0
-4
-5
-2
-1
0
T
A
= -55_C
125_C
100
0
-0.4
-0.2
-0.8
-1.0
80
60
20
0
200
160
120
40
0
T
A
= 125_C
-55_C
T
A
= -55_C
125_C
V
DS
= 10 V
V
DS
= 10 V
f = 1 kHz
V
DS
= 10 V
V
DS
= 10 V
f = 1 kHz
T
A
= -55_C
125_C
0.1
1
0.01
100
0
V
GS(off)
= -0.7 V
-2.5 V
R
L
+ 10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
2.0
0
f = 1 MHz
V
DS
= 0 V
10 V
V
GS
- Gate-Source Voltage (V)
I
D
- Drain Current (mA)
V
GS
- Gate-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
V
GS(off)
= -0.7 V
V
GS(off)
= -0.7 V
V
GS(off)
= -2.5 V
V
GS(off)
= -2.5 V
40
80
60
20
40
80
25_C
25_C
-0.6
0
-0.4
-0.2
-0.8
-1.0
-0.6
-3
0
-4
-5
-2
-1
-3
0
-16
-20
-8
-4
-12
120
400
300
100
200
1.6
1.2
0.4
0.8
A
V
+
g
fs
R
L
1 ) R
L
g
os
25_C
25_C
g
fs
-
Forward T
ransconductance (
S)
g
fs
-
Forward T
ransconductance (
S)
A
V
-
V
oltage Gain
C
is
s
-
Input Capacitance (pF)
I
D
-
Drain Current (
A)
I
D
-
Drain Current (
A)
2N/PN/SST4117A Series
Vishay Siliconix
Document Number: 70239
S-41231--Rev. G, 28-Jun-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
2
1
0
0.01
0.1
1
Equivalent Input Noise Voltage vs. Frequency
I
D
- Drain Current (mA)
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
On-Resistance vs. Drain Current
Output Conductance vs. Drain Current
V
DS
= 10 V
f = 1 kHz
0.5
0
-8
-20
-16
-4
0.4
0.3
0.1
0
f = 1 MHz
V
DS
= 0 V
10 V
10
100
1 k
100 k
10 k
200
0
V
DS
= 10 V
I
D
= 10 mA
V
GS
= 0 V
T
A
= -55_C
125_C
I
D
- Drain Current (mA)
V
GS
- Gate-Source Voltage (V)
f - Frequency (Hz)
0.2
160
120
40
80
-12
V
GS(off)
= -2.5 V
20
0
0.01
0.1
1
16
12
8
4
V
GS(off)
= -0.7 V
-2.5 V
T
A
= 25_C
25_C
e
n
-
Noise V
oltage nV
/ Hz
r
DS
(
on)
-
Drain-Source On-Resistance (
)
g
os
-
Output Conductance (
S)
C
rss
-
Reverse Feedback Capacitance (pF)
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