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Электронный компонент: 2N4340

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2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-04028--Rev. E, 04-Jun-01
www.vishay.com
7-1
N-Channel JFETs
PRODUCT SUMMARY
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Max (mA)
2N4338
0.3 to 1
50
0.6
0.6
2N4339
0.6 to 1.8
50
0.8
1.5
2N4340
1 to 3
50
1.3
3.6
2N4341
2 to 6
50
2
9
FEATURES
BENEFITS
APPLICATIONS
D
Low Cutoff Voltage: 2N4338 <1 V
D
High Input Impedance
D
Very Low Noise
D
High Gain: A
V
= 80 @ 20
m
A
D
Full Performance from Low-Voltage
Power Supply: Down to 1 V
D
Low Signal Loss/System Error
D
High System Sensitivity
D
High-Quality Low-Level Signal
Amplification
D
High-Gain, Low-Noise Amplifiers
D
Low-Current, Low-Voltage
Battery-Powered Amplifiers
D
Infrared Detector Amplifiers
D
Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
1
2
3
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage
50 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 200
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 175
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
" from case for 10 sec.)
300
_
C
. . . . . . . . . . . . . . . . . . .
Power Dissipation
a
300 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2 mW/
_
C above 25
_
C
For applications information see AN102 and AN106.
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70240
S-04028--Rev. E, 04-Jun-01
SPECIFICATIONS FOR 2N4338 AND 2N4339 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N4338
2N4339
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= 1
m
A , V
DS
= 0 V
57
50
50
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 0.1
m
A
0.3
1
0.6
1.8
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V
0.2
0.6
0.5
1.5
mA
V
GS
= 30 V, V
DS
= 0 V
2
100
100
pA
Gate Reverse Current
I
GSS
T
A
= 150
_
C
4
100
100
nA
Gate Operating Current
b
I
G
V
DG
= 15 V, I
D
= 0.1 mA
2
Drain Cutoff Current
I
D(off)
V
DS
= 15 V, V
GS
= 5 V
2
50
50
pA
Gate-Source Forward Voltage
c
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
g
fs
0.6
1.8
0.8
2.4
mS
Common-Source
Output Conductance
g
os
V
DS
= 15 V, V
GS
= 0 V, f = 1 kHz
5
15
m
S
Drain-Source On-Resistance
r
ds(on)
V
DS
= 0 V, V
GS
= 0 V, f = 1 kHz
2500
1700
W
Common-Source
Input Capacitance
C
iss
5
7
7
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1.5
3
3
pF
Equivalent Input Noise Voltage
c
e
n
V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
6
nV
/
Hz
Noise Figure
NF
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz, R
G
= 1 M
W
1
1
dB
SPECIFICATIONS FOR 2N4340 AND 2N4341 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340
2N4341
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= 1
m
A , V
DS
= 0 V
57
50
50
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 0.1
m
A
1
3
2
6
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V
1.2
3.6
3
9
mA
V
GS
= 30 V, V
DS
= 0 V
2
100
100
pA
Gate Reverse Current
I
GSS
T
A
= 150
_
C
4
100
100
nA
Gate Operating Current
b
I
G
V
DG
= 15 V, I
D
= 0.1 mA
2
V
GS
= 5 V
2
50
pA
Drain Cutoff Current
I
D(off)
V
DS
= 15 V
V
GS
= 10 V
3
70
Gate-Source Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-04028--Rev. E, 04-Jun-01
www.vishay.com
7-3
SPECIFICATIONS FOR 2N4340 AND 2N4341 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340
2N4341
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Dynamic
Common-Source
Forward Transconductance
g
fs
1.3
3
2
4
mS
Common-Source
Output Conductance
g
os
V
DS
= 15 V, V
GS
= 0 V, f = 1 kHz
30
60
m
S
Drain-Source On-Resistance
r
ds(on)
V
DS
= 0 V, V
GS
= 0 V, f = 1 kHz
1500
800
W
Common-Source
Input Capacitance
C
iss
5
7
7
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1.5
3
3
pF
Equivalent Input Noise Voltage
c
e
n
V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
6
nV
/
Hz
Noise Figure
NF
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz, R
G
= 1 M
W
1
1
dB
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NPA
b.
Pulse test: PW
v
300
m
s, duty cycle
v
3%.
c.
This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
10
0
8
6
4
2
0
5
4
3
2
1
0
18
12
6
24
30
5
4
1
3
2
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
V
GS(off)
Gate-Source Cutoff Voltage (V)
V
DG
Drain-Gate Voltage (V)
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
I
GSS
@ 125
_
C
I
GSS
@ 25
_
C
T
A
= 125
_
C
T
A
= 25
_
C
500 mA
500 mA
I
D
= 100 mA
I
D
= 100 mA
g
fs

Forward T
ransconductance (mS)
I
DS
S

Saturation Drain Current (mA)
I
G

Gate Leakage (A)
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
7-4
Document Number: 70240
S-04028--Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
1500
0
3
5
4
2
1
1200
900
600
300
0
0.01
0.1
1
2
1.6
0.8
0.4
0
10
8
4
2
0
400
0
12
16
4
20
320
160
80
0
2
0
12
16
8
4
20
1.6
1.2
0.8
0.4
0
Output Characteristics
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
Output Characteristics
I
D
Drain Current (mA)
V
GS(off)
Gate-Source Cutoff Voltage (V)
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
T
A
= 55
_
C
125
_
C
V
GS
= 0 V
0.2 V
0.4 V
V
GS
= 0 V
0.6 V
0.9 V
0.1 V
0.3 V
r
DS
@ I
D
= 100 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
r
DS
g
os
V
GS(off)
= 1.5 V
0.3 V
6
1.2
240
8
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 0.7 V
V
GS(off)
= 1.5 V
1.2 V
0.5 V
Output Characteristics
300
0
0.5
240
180
120
60
0
V
DS
Drain-Source Voltage (V)
0.1
0.2
0.3
0.4
V
GS
= 0 V
0.1 V
0.2 V
0.3 V
0.4 V
V
GS(off)
= 0.7 V
0.5 V
Output Characteristics
1
0
1.0
0.8
0.6
0.4
0.2
0
V
DS
Drain-Source Voltage (V)
0.2
0.4
0.6
0.8
V
GS
= 0 V
0.3 V
0.6 V
0.9 V
V
GS(off)
= 1.5 V
1.2 V
25
_
C
r
DS
(
on)

Drain-Source On-Resistance (
)
g
os

Output Conductance (
S)
g
fs

Forward T
ransconductance (mS)
I
D
Drain Current (mA)
I
D
Drain Current (
A)
I
D
Drain Current (mA)
I
D
Drain Current (
A)
2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-04028--Rev. E, 04-Jun-01
www.vishay.com
7-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
500
0
0.3
0.2
0.1
0.4
0.5
400
300
200
100
0
Transfer Characteristics
V
GS
Gate-Source Voltage (V)
T
A
= 55
_
C
125
_
C
V
GS(off)
= 0.7 V
V
DS
= 10 V
25
_
C
1.5
0
0.3
0.4
0.2
0.1
0.5
1.2
0.9
0.6
0.3
0
Transconductance vs. Gate-Source Voltage
V
GS(off)
= 0.7 V
T
A
= 55
_
C
125
_
C
V
GS
Gate-Source Voltage (V)
V
DS
= 10 V
f = 1 kHz
25
_
C
2
0
1.2
1.6
2
0.8
0.4
1.6
1.2
0.8
0.4
0
Transfer Characteristics
V
GS
Gate-Source Voltage (V)
T
A
= 55
_
C
125
_
C
V
GS(off)
= 1.5 V
25
_
C
V
DS
= 10 V
4
1.2
2
1.6
0.8
0.4
0
3.2
2.4
1.6
0.8
0
Transconductance vs. Gate-Source Voltage
V
GS(off)
= 1.5 V
T
A
= 55
_
C
125
_
C
V
GS
Gate-Source Voltage (V)
25
_
C
V
DS
= 10 V
f = 1 kHz
0.1
1
0.01
0.01
0.1
1
200
160
120
80
40
0
2000
1600
1200
800
400
0
I
D
Drain Current (mA)
A
V
+
g
fs
R
L
1
)
R
L
g
os
R
L
+
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
V
GS(off
)
= 0.7 V
1.5 V
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
I
D
Drain Current (mA)
T
A
= 25
_
C
V
GS(off)
= 0.7 V
1.5 V
I
D

Drain Current (
A)
I
D

Drain Current (mA)
r
DS
(
on)

Drain-Source On-Resistance (
)
g
fs

Forward T
ransconductance (mS)
g
fs

Forward T
ransconductance (mS)
A
V

V
oltage Gain
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
7-6
Document Number: 70240
S-04028--Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
10
100
1 k
100 k
10 k
10
0
12
16
20
8
4
8
6
4
2
0
5
0
12
20
16
8
4
4
3
2
1
0
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
V
GS
Gate-Source Voltage (V)
V
DS
= 0 V
10 V
f = 1 MHz
V
GS
Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
V
DS
= 0 V
10 V
f = 1 MHz
20
16
12
8
4
0
Output Conductance vs. Drain Current
I
D
Drain Current (mA)
V
DS
= 10 V
f = 1 kHz
T
A
= 55
_
C
125
_
C
Equivalent Input Noise Voltage vs. Frequency
f Frequency (Hz)
V
DS
= 10 V
I
D
= 100 mA
I
D
= I
DSS
3
2.4
1.8
0.8
0.4
0
0.01
0.1
1
V
GS(off)
= 1.5 V
25
_
C
e
n
Noise V
oltage nV
/ Hz
g
os

Output Conductance (
S)
C
is
s
Input Capacitance (pF)
C
rss
Reverse Feedback Capacitance (pF)