2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
Document Number: 70261
S-04030--Rev. E, 04-Jun-01
www.vishay.com
9-1
P-Channel JFETs
2N5114JAN/JANTX/JANTXV
2N5115JAN/JANTX/JANTXV
2N5116JAN/JANTX/JANTXV
PRODUCT SUMMARY
Part Number
V
GS(off)
(V)
r
DS(on)
Max (
W
)
I
D(off)
Typ (pA)
t
ON
Max (ns)
2N5114
5 to 10
75
10
16
2N5115
3 to 6
100
10
30
2N5116
1 to 4
150
10
42
FEATURES
BENEFITS
APPLICATIONS
D
Low On-Resistance: 2N5114 <75
W
D
Fast Switching--t
ON
: 16 ns
D
High Off-Isolation--I
D(off)
: 10 pA
D
Low Capacitance: 6 pF
D
Low Insertion Loss
D
Low Error Voltage
D
High-Speed Analog Circuit Performance
D
Negligible "Off-Error," Excellent Accuracy
D
Good Frequency Response
D
Eliminates Additional Buffering
D
Analog Switches
D
Choppers
D
Sample-and-Hold
D
Normally "On" Switches
D
Current Limiters
DESCRIPTION
The 2N5114JAN/JANTX/JANTXV series consists of
p-channel JFET analog switches designed to provide low
on-resistance, good off-isolation, and fast switching. These
JFETs are optimized for use in complementary switching
applications with the Vishay Siliconix 2N4856A series.
TO-206AA
(TO-18)
S
D
Top View
G
Case
1
2
3
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 200
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 200
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
" from case for 10 sec.)
300
_
C
. . . . . . . . . . . . . . . . . . .
Power Dissipation
a
500
mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 3 mW/
_
C above 25
_
C
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
www.vishay.com
9-2
Document Number: 70261
S-04030--Rev. E, 04-Jun-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N5114
2N5115
2N5116
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= 1
m
A , V
DS
= 0 V
45
30
30
30
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 1 nA
5
10
3
6
1
4
V
V
DS
= 18 V
30
90
Saturation Drain Current
b
I
DSS
V
GS
= 0 V
V
DS
= 15 V
15
60
5
25
mA
V
GS
= 20 V, V
DS
= 0 V
5
500
500
500
pA
Gate Reverse Current
I
GSS
T
A
= 150
_
C
0.01
1
1
1
m
A
Gate Operating Current
c
I
G
V
DG
= 15 V, I
D
= 1 mA
5
V
GS
= 12 V
10
500
V
DS
= 15 V
V
GS
= 7 V
10
500
pA
DS
V
GS
= 5 V
10
500
Drain Cutoff Current
I
D(off)
V
GS
= 12 V
0.02
1
V
DS
= 15 V
T = 150
_
C
V
GS
= 7 V
0.02
1
m
A
T
A
= 150
_
C
V
GS
= 5 V
0.02
1
m
I
D
= 15 mA
1.0
1.3
Drain-Source On-Voltage
V
DS(on)
V
GS
= 0 V
I
D
= 7 mA
0.7
0.8
V
DS(on)
GS
I
D
= 3 mA
0.5
0.6
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
75
100
150
W
Gate-Source Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
1
1
1
V
Dynamic
Drain-Source On-Resistance
r
ds(on)
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
75
100
175
W
Common-Source
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
20
25
25
27
V
GS
= 12 V
5
7
pF
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 0 V
f = 1 MHz
V
GS
= 7 V
6
7
pF
Reverse Transfer Capacitance
rss
f = 1 MHz
V
GS
= 5 V
6
7
Switching
t
d(on)
6
10
25
Turn-On Time
t
r
10
20
35
t
d(off)
See Switching Circuit
6
8
20
ns
Turn-Off Time
t
f
15
30
60
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
PSCIA
b.
Pulse test: PW
v
300
m
s duty cycle
v
3%.
c.
This parameter not registered with JEDEC.
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
Document Number: 70261
S-04030--Rev. E, 04-Jun-01
www.vishay.com
9-3
SWITCHING TIME TEST CIRCUIT
2N5114
2N5115
2N5116
V
DD
10 V
6 V
6 V
V
GG
20 V
12 V
8 V
R
L
*
430
W
910
W
2000
W
R
G
*
100
W
220
W
390
W
I
D(on)
15 mA
7 mA
3 mA
V
GS(H)
0 V
0 V
0 V
V
GS(L)
11 V
7 V
5 V
*Non-inductive
INPUT PULSE
SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 M
W
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
7.5 k
W
51
W
1.2 k
W
51
W
51
W
1.2 k
W
0.1
m
F
Sampling
Scope
V
GG
V
DD
R
G
V
GS(H)
V
GS(L)
R
L
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