Vishay Siliconix
2N6661/VN88AFD
Document Number: 70224
S-04279--Rev. C, 16-Jul-01
www.vishay.com
11-1
N-Channel 80-V and 90-V (D-S) MOSFETS
PRODUCT SUMMARY
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max (
W
)
V
GS(th)
(V)
I
D
(A)
2N6661
90
4 @ V
GS
= 10 V
0.8 to 2
0.9
VN88AFD
80
4 @ V
GS
= 10 V
0.8 to 2.5
1.29
FEATURES
BENEFITS
APPLICATIONS
D
Low On-Resistance: 3.6
W
D
Low Threshold: 1.6 V
D
Low Input Capacitance: 35 pF
D
Fast Switching Speed: 6 ns
D
Low Input and Output Leakage
D
Low Offset Voltage
D
Low-Voltage Operation
D
Easily Driven Without Buffer
D
High-Speed Circuits
D
Low Error Voltage
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories, Transistors,
etc.
D
Battery Operated Systems
D
Solid-State Relays
1
2
3
TO-205AD
(TO-39)
Top View
D
G
S
TO-220SD
(Tab-Drain)
Front View
S G D
D
G
S
N-Channel MOSFET
2N6661
VN88AFD
Device Marking
Front View
VN88AFD
"S" xxyy
"S" = Siliconix Logo
xxyy = Date Code
Device Marking
Side View
2N6661
"S" fllxxyy
"S" = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
2N6661
VN88AFD
Unit
Drain-Source Voltage
V
DS
90
80
Gate-Source Voltage
V
GS
"
20
"
30
V
_
T
C
= 25
_
C
0.9
1.29
Continuous Drain Current
(T
J
= 150
_
C)
T
C
= 100
_
C
I
D
0.7
0.81
A
Pulsed Drain Current
a
I
DM
"
3
"
3
T
C
= 25
_
C
6.25
15
Power Dissipation
T
C
= 100
_
C
P
D
2.5
6
W
Thermal Resistance, Junction-to-Ambient
b
R
thJA
170
_
Thermal Resistance, Junction-to-Case
R
thJC
8.3
_
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
Notes
a.
Pulse width limited by maximum junction temperature.
b.
This parameter not registered with JEDEC.
2N6661/VN88AFD
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70224
S-04279--Rev. C, 16-Jul-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N6661
VN88AFD
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10
m
A
125
90
80
V
DS
= V
GS
, I
D
= 1 mA
1.6
0.8
2
0.8
2.5
Gate-Threshold Voltage
V
GS(th)
T
J
= 55
_
C
1.8
V
T
J
= 125
_
C
1.3
V
DS
= 0 V, V
GS
=
"
15 V
"
100
"
100
Gate-Body Leakage
I
GSS
T
J
= 125
_
C
"
500
"
500
nA
V
DS
= 90 V, V
GS
= 0 V
10
V
DS
= 80 V, V
GS
= 0 V
10
m
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 0.8 x V
(BR)DSS
, V
GS
= 0 V
1
m
A
T
J
= 125
_
C
500
500
V
DS
= 15 V, V
GS
= 10 V
1.8
1.5
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
1.8
1.5
A
V
GS
= 5 V, I
D
= 0.3 A
3.8
5.3
5.6
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
=
1
A
3.6
4
4
W
T
J
= 125
_
C
d
6.7
9
8
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
350
170
170
mS
Diode Forward Voltage
V
SD
I
S
= 0.86 A, V
GS
= 0 V
0.9
V
Dynamic
Input Capacitance
C
iss
35
50
50
Output Capacitance
C
oss
V
DS
= 24 V, V
GS
= 0 V
15
40
40
Reverse Transfer Capacitance
C
rss
V
DS
= 24 V, V
GS
= 0 V
f = 1 MHz
2
10
10
pF
Drain-Source Capacitance
C
ds
30
40
Switching
c
Turn-On Time
t
ON
V
DD
= 25 V, R
L
= 23
W
^
6
10
15
Turn-Off Time
t
OFF
I
D
^
1 A, V
GEN
= 10 V
R
G
= 25
W
8
10
15
ns
Notes
a.
For DESIGN AID ONLY, not subject to production testing.
VNDQ09
b.
Pulse test: PW
v
300
m
s duty cycle
v
2%.
c.
Switching time is essentially independent of operating temperature.
d.
This parameter not registered with JEDEC.
Vishay Siliconix
2N6661/VN88AFD
Document Number: 70224
S-04279--Rev. C, 16-Jul-01
www.vishay.com
11-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
I
D
Drain Current (A)
T
J
Junction Temperature (
_
C)
1.0
0
1.0
2.0
3.0
4.0
5.0
0.8
0.6
0.4
0.2
0
6 V
5 V
4 V
3 V
2 V
V
GS
= 10 V
0.5
0.4
0.3
0
0
2
10
0.2
0.1
4
6
8
125
_
C
V
DS
= 15 V
10
8
6
0
0
0.5
2.5
4
2
1.0
1.5
2.0
V
GS
= 10 V
100
0
0.4
0.8
1.2
1.6
2.0
80
60
40
20
0
2.8 V
2.6 V
2.4 V
2.2 V
2.0 V
1.8 V
V
GS
= 3 V
2.25
2.00
1.75
0.50
50
10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= 10 V
7
0
4
8
12
16
20
6
5
4
0
3
2
1
I
D
= 0.1 A
0.5 A
1.0 A
25
_
C
I
D
Drain Current (A)
I
D
Drain Current (mA)
I
D
Drain Current (A)
r
DS
(
on)
On-Resistance (
)
r
DS
(
on)
Drain-Source On-Resistance (
)
r
DS
(
on)
Drain-Source On-Resistance (
)
(
Normalized)
2N6661/VN88AFD
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70224
S-04279--Rev. C, 16-Jul-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
0.1
10 K
1.0
0.01
0.1
1.0
100
10
1 K
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Threshold Region
Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661)
Gate Charge
Load Condition Effects on Switching
Normalized Ef
fective
T
ransient
Thermal Impedance
t
1
Square Wave Pulse Duration (sec)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Q
g
Total Gate Charge (pC)
1. Duty Cycle, D =
2. Per Unit Base = R
thJC
= 20
_
C/W
3. T
JM
T
C
= P
DM
Z
thJC
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
125
100
75
0
0
10
50
50
25
20
30
40
C oss
C iss
C rss
VGS = 0 V
f = 1 MHz
10
1
0.01
0.5
0.1
1.0
1.5
2.0
25
_
C
55
_
C
125
_
C
V
GS
= 5 V
T
J
= 150
_
C
15.0
12.5
10.0
0
0
100
500
7.5
5.0
200
300
400
2.5
I
D
= 1.0 A
V
DS
= 45 V
72 V
0.1
1
2
100
10
1
V
DD
= 25 V
R
L
= 23
W
V
GS
= 0 to 10 V
I
D
= 1.0 A
t
d(on)
t
d(off)
t
r
t
f
0.05
0.02
0.01
I
D
Drain Current (mA)
C
Capacitance (pF)
V
GS
Gate-to-Source V
oltage (V)
t
Switching T
ime (ns)
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