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Электронный компонент: 4N35GV

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4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11Jan99
86
Optocoupler with Phototransistor Output
Description
The 4N25(G)V/ 4N35(G)V series consists of a photo-
transistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
D
For appl. class I IV at mains voltage
300 V
D
For appl. class I III at mains voltage
600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage
400 V
RMS
)
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
14827
6
5
4
2
3
1
C
E
A (+) C ()
n.c.
95 10805
B
Order Instruction
Ordering Code
CTR Ranking
Remarks
4N25V/ 4N25GV
1)
>20%
4N35V/ 4N35GV
1)
>100%
1)
G = Leadform 10.16 mm; G is not market on the body
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11Jan99
87
Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 12399
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
VDE 0884, Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
V
IOTM
= 6 kV peak
D
Isolation test voltage
(partial discharge test voltage) V
pd
= 1.6 kV
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
D
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
D
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D
Thickness through insulation
0.75 mm
General features:
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
Coupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
5
V
Forward current
I
F
60
mA
Forward surge current
t
p
10
m
s
I
FSM
3
A
Power dissipation
T
amb
25
C
P
V
100
mW
Junction temperature
T
j
125
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
32
V
Emitter collector voltage
V
CEO
7
V
Collector current
I
C
50
mA
Collector peak current
t
p
/T = 0.5, t
p
10 ms
I
CM
100
mA
Power dissipation
T
amb
25
C
P
V
150
mW
Junction temperature
T
j
125
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Isolation test voltage (RMS)
t = 1 min
V
IO
3.75
kV
Total power dissipation
T
amb
25
C
P
tot
250
mW
Ambient temperature range
T
amb
55 to +100
C
Storage temperature range
T
stg
55 to +125
C
Soldering temperature
2 mm from case, t
10 s
T
sd
260
C
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11Jan99
88
Electrical Characteristics
(T
amb
= 25
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
= 50 mA
T
amb
= 100
C
V
F
1.2
1.4
V
Junction capacitance
V
R
= 0, f = 1 MHz
C
j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I
C
= 1 mA
V
CEO
32
V
Emitter collector voltage
I
E
= 100
m
A
V
ECO
7
V
Collector emitter cut-off
current
V
CE
= 10 V, I
F
= 0,
T
amb
= 100
C
I
CEO
50
nA
V
CE
= 30 V, I
F
= 0,
T
amb
= 100
C
I
CEO
500
m
A
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter
saturation voltage
I
F
= 50 mA, I
C
= 2 mA
V
CEsat
0.3
V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
W
f
c
110
kHz
Coupling capacitance
f = 1 MHz
C
k
1
pF
Current Transfer Ratio (CTR)
Parameter
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
I
C
/I
F
V
CE
= 10 V, I
F
= 10 mA
4N25(G)V
CTR
0.20
1
C F
CE
F
4N35(G)V
CTR
1.00
1.5
V
CE
= 10 V, I
F
= 10 mA,
T
amb
= 100
C
4N35(G)V
CTR
0.40
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11Jan99
89
Maximum Safety Ratings
(according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
I
si
130
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
T
amb
25
C
P
si
265
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
V
IOTM
6
kV
Safety temperature
T
si
150
Insulation Rated Parameters
(according to VDE 0884)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Partial discharge test voltage
Routine test
100%, t
test
= 1 s
V
pd
1.6
kV
Partial discharge test voltage t
Tr
= 60 s, t
test
= 10 s,
V
IOTM
6
kV
g
g
Lot test (sample test)
Tr
test
(see figure 2)
V
pd
1.3
kV
Insulation resistance
V
IO
= 500 V
R
IO
10
12
W
V
IO
= 500 V,
T
amb
= 100
C
R
IO
10
11
W
V
IO
= 500 V,
T
amb
= 150
C
(construction test only)
R
IO
10
9
W
0
25
50
75
125
0
50
100
150
200
300
P
T
otal Power Dissipation ( mW
)
tot
T
si
Safety Temperature (
C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 1. Derating diagram
V
IOTM
V
Pd
V
IOWM
V
IORM
V
t
4
t
3
t
test
t
stres
t
2
t
1
t
0
13930
t
Tr
= 60 s
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11Jan99
90
Switching Characteristics of 4N25(G)V
Parameter
Test Conditions
Symbol
Typ.
Unit
Delay time
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
W
(see figure 3)
t
d
4.0
m
s
Rise time
S
C
L
(
g
)
t
r
7.0
m
s
Fall time
t
f
6.7
m
s
Storage time
t
s
0.3
m
s
Turn-on time
t
on
11.0
m
s
Turn-off time
t
off
7.0
m
s
Turn-on time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
W
(see figure 4)
t
on
25.0
m
s
Turn-off time
S
F
L
(
g
)
t
off
42.5
m
s
Switching Characteristics of 4N35(G)V
Parameter
Test Conditions
Symbol
Typ.
Unit
Delay time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
W
(see figure 3)
t
d
2.5
m
s
Rise time
S
C
L
(
g
)
t
r
3.0
m
s
Fall time
t
f
4.2
m
s
Storage time
t
s
0.3
m
s
Turn-on time
t
on
<10.0
m
s
Turn-off time
t
off
<10.0
m
s
Turn-on time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
W
(see figure 4)
t
on
9.0
m
s
Turn-off time
S
F
L
(
g
)
t
off
25.0
m
s
Channel I
Channel II
100
W
50
W
+ 5 V
Oscilloscope
R
L
1 M
W
C
L
20 pF
I
C
= 5 mA/ 2 mA;
Adjusted through
input amplitude
I
F
0
14950
I
F
R
G
= 50
W
t
p
= 50
ms
t
p
T +
0.01
Figure 3. Test circuit, non-saturated operation
Channel I
Channel II
1 k
W
50
W
+ 5 V
Oscilloscope
I
C
I
F
= 10 mA
I
F
0
95 10844
R
L
1 M
W
C
L
20 pF
R
G
= 50
W
t
p
= 50
ms
t
p
T +
0.01
Figure 4. Test circuit, saturated operation
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse dura-
tion
t
d
delay time
t
r
rise time
t
on
(= t
d
+ t
r
)
turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+ t
f
)
turn-off time
Figure 5. Switching times
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11Jan99
91
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
0
50
100
150
200
250
300
0
40
80
120
P
T
otal Power Dissipation ( mW
)
T
amb
Ambient Temperature (
C )
96 11700
tot
Coupled device
Phototransistor
IR-diode
Figure 6. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )
96 11862
F
I Forward Current ( mA
)
Figure 7. Forward Current vs. Forward Voltage
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
30 20 10 0
10 20 30 40 50 60 70 80
T
amb
Ambient Temperature (
C
)
96 11874
CTR Relative Current
T
ransfer
Ratio
rel
V
CE
=10V
I
F
=10mA
Figure 8. Relative Current Transfer Ratio vs.
Ambient Temperature
1
10
100
1000
10000
0
10 20 30 40 50 60 70 80 90 100
T
amb
Ambient Temperature (
C
)
96 11875
I Collector Dark Current,
CEO
with open Base ( nA
)
V
CE
=10V
I
F
=0
Figure 9. Collector Dark Current vs.
Ambient Temperature
0.001
0.010
0.100
1.000
1
10
100
I
F
Forward Current ( mA )
96 11876
I Collector Base Current ( mA
)
CB
V
CB
=10V
Figure 10. Collector Base Current vs. Forward Current
0.01
0.10
1.00
10.00
100.00
0.1
1.0
10.0
100.0
I
F
Forward Current ( mA )
96 11904
V
CE
=10V
I Collector Current ( mA
)
C
Figure 11. Collector Current vs. Forward Current
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11Jan99
92
0.1
1.0
10.0
100.0
0.1
1.0
10.0
100.0
V
CE
Collector Emitter Voltage ( V
)
96 11905
I Collector Current ( mA
)
C
20mA
10mA
5mA
2mA
1mA
I
F
=50mA
Figure 12. Collector Current vs. Collector Emitter Voltage
1
10
0
0.2
0.4
0.6
0.8
1.0
V
Collector Emitter Saturation
V
oltage (
V

)
CEsat
I
C
Collector Current ( mA )
100
95 10972
CTR=50%
20%
10%
Figure 13. Collector Emitter Saturation Voltage vs.
Collector Current
0.01
0.1
1
10
0
200
400
600
800
1000
h DC Current Gain
FE
I
C
Collector Current ( mA )
100
95 10973
V
CE
=10V
5V
Figure 14. DC Current Gain vs. Collector Current
0.1
1
10
1
10
100
1000
CTR Current
T
ransfer Ratio ( % )
I
F
Forward Current ( mA )
100
95 10976
V
CE
=20V
Figure 15. Current Transfer Ratio vs. Forward Current
0
5
10
15
0
10
20
30
40
50
I
F
Forward Current ( mA )
20
95 10974
t / t
T
urn on /
T
urn
of
f
T
ime ( s )
of
f
m
on
Saturated Operation
V
S
=5V
R
L
=1k
W
t
off
t
on
Figure 16. Turn on / off Time vs. Forward Current
0
2
4
6
I
C
Collector Current ( mA )
10
95 10975
t / t
T
urn on /
T
urn
of
f
T
ime ( s )
of
f
m
on
Non Saturated
Operation
V
S
=10V
R
L
=100
W
t
off
t
on
0
5
10
15
20
8
Figure 17. Turn on / off Time vs. Collector Current
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11Jan99
93
XXXXXX
0884
918 A TK 63
15090
Type
Date
Code
(YM)
Coupling
System
Indicator
Company
Logo
Production
Location
Safety
Logo
V
D
E
Figure 18. Marking example
Dimensions of 4N25G/ 4N35G in mm
14771
weight: ca. 0.50 g
creepage distance:
y
8 mm
air path:
y
8 mm
after mounting on PC board
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11Jan99
94
Dimensions of 4N25/ 4N35 in mm
14770
weight: 0.50 g
creepage distance:
y
6 mm
air path:
y
6 mm
after mounting on PC board