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Si4831DY
Vishay Siliconix
New Product
Document Number: 71061
S-61859--Rev. A, 10-Oct-99
www.vishay.com
S
FaxBack 408-970-5600
2-1
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
30
0.045 @ V
GS
= 10 V
"
5
30
0.090 @ V
GS
= 4.5 V
"
3.5
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
V
f
(V)
Diode Forward Voltage
I
F
(A)
30
0.53 V @ 3 A
3
K
A
S
G
D
P-Channel MOSFET
A
K
A
K
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V
DS
30
V
Reverse Voltage (Schottky)
V
KA
30
V
Gate-Source Voltage (MOSFET)
V
GS
"
20
Continuous Drain Current
(T
J
= 150
_
C) (MOSFET)
a, b
T
A
= 25
_
C
I
D
"
5
A
Continuous Drain Current
(T
J
= 150 C) (MOSFET)
a, b
T
A
= 70
_
C
I
D
"
3.9
A
Pulsed Drain Current (MOSFET)
I
DM
"
20
A
Continuous Source Current (MOSFET Diode Conduction)
a, b
I
S
1.7
A
Average Foward Current (Schottky)
I
F
3
Pulsed Foward Current (Schottky)
I
FM
20
Maximum Power Dissipation (MOSFET)
a, b
T
A
= 25
_
C
P
2
W
Maximum Power Dissipation (MOSFET)
a, b
T
A
= 70
_
C
P
D
1.28
W
Maximum Power Dissipation (Schottky)
a, b
T
A
= 25
_
C
P
D
1.83
W
Maximum Power Dissipation (Schottky)
a, b
T
A
= 70
_
C
1.17
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
Notes
a.
Surface Mounted on FR4 Board.
b.
t
v
10 sec.
Si4831DY
Vishay Siliconix
New Product
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 71061
S-61859--Rev. A, 10-Oct-99
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (t
v
10 sec)
a
MOSFET
R
52
62.5
_
C/W
Maximum Junction-to-Ambient (t
v
10 sec)
a
Schottky
R
thJA
56
68
_
C/W
Maximum Junction-to-Ambient (t = steady state)
a
MOSFET
R
thJA
82
100
_
C/W
Maximum Junction-to-Ambient (t = steady state)
a
Schottky
91
110
_
C/W
Maximum Junction-to-Foot
MOSFET
R
thJF
27
33
Maximum Junction-to-Foot
Schottky
R
thJF
32
40
Notes
a.
Surface Mounted on FR4 Board.
b.
t
v
10 sec.
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 75
_
C
10
m
A
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
20
A
Drain Source On State Resistance
a
r
DS(
)
V
GS
= 10 V, I
D
= 5 A
0.036
0.045
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
=
3.5 A
0.060
0.090
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 5 A
9
S
Diode Forward Voltage
a
V
SD
I
S
= 1.7 A, V
GS
= 0 V
0.75
1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
15 V V
5 V I
5 A
10
20
C
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 5 A
4.5
nC
Gate-Drain Charge
Q
gd
3.6
Turn-On Delay Time
t
d(on)
V
15 V R
15
W
13
25
Rise Time
t
r
V
DD
= 15 V, R
L
= 15
W
I
1 A V
10 V R
6
W
15
30
Turn-Off Delay Time
t
d(off)
DD
,
L
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
37
70
ns
Fall Time
t
f
14
30
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/
m
s
35
70
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 3 A
0.485
0.53
V
Forward Voltage Drop
V
F
I
F
= 3 A, T
J
= 125
_
C
0.42
0.47
V
M
i
R
L
k
C
I
V
r
= 30 V
0.008
0.1
A
Maximum Reverse Leakage Current
I
rm
V
r
= 30 V, T
J
= 75
_
C
0.4
5
mA
V
r
= 30 V, T
J
= 125
_
C
6.5
20
Junction Capacitance
C
T
V
r
= 15 V
102
pF
Si4831DY
Vishay Siliconix
New Product
Document Number: 71061
S-61859--Rev. A, 10-Oct-99
www.vishay.com
S
FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
0
4
8
12
16
20
0
2
4
6
8
10
0
2
4
6
8
10
0
4
8
12
16
20
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
25
0
25
50
75
100
125
150
0
0.04
0.08
0.12
0.16
0
4
8
12
16
20
0
300
600
900
1200
1500
0
6
12
18
24
30
0
4
8
12
16
20
0
1
2
3
4
5
V
GS
= 10 thru 5 V
3 V
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 10 V
I
D
= 5.7 A
C
rss
C
oss
C
iss
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
On-Resistance (
r DS(on)
W
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r DS(on)
W
)
T
C
= 125
_
C
55
_
C
25
_
C
V
DS
= 10 V
I
D
= 5.7 A
4 V
Si4831DY
Vishay Siliconix
New Product
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71061
S-61859--Rev. A, 10-Oct-99
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
1.25
1.50
0
0.04
0.08
0.12
0.16
0.20
0
2
4
6
8
10
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
50
25
0
25
50
75
100
125
150
1
10
20
I
D
= 5.7 A
I
D
= 250
m
A
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
On-Resistance (
r DS(on)
W
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
T
J
Temperature (
_
C)
V
ariance (V)
V
GS(th)
0.00
0.25
0.50
0.75
1.00
T
J
= 25
_
C
T
J
= 150
_
C
Single Pulse Power, Junction-to-Ambient
Time (sec)
Power (W)
40
32
24
16
8
0
0.01
0.1
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
2
1
0.1
0.01
10
3
10
2
1
10
600
10
1
10
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 82
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Si4831DY
Vishay Siliconix
New Product
Document Number: 71061
S-61859--Rev. A, 10-Oct-99
www.vishay.com
S
FaxBack 408-970-5600
2-5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
Junction Capacitance (pF)
0.8
0.1
1
5
Forward Voltage Drop
V
F
Forward Voltage Drop (V)
Forward Current (A)
I
F
0
0.2
0.4
T
J
= 150
_
C
Capacitance
0
100
200
300
400
500
0
6
12
18
24
30
V
KA
Reverse Voltage (V
125
150
0.0001
1
40
Reverse Current vs. Junction Temperature
T
J
Junction Temperature (
_
C)
Reverse Current (mA)
I
R
0
25
50
75
100
C
T
10 V
0.001
0.01
0.1
10
30 V
0.6
T
J
= 25
_
C