FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
APPLICATIONS
D Backlight Inverter
D DC/DC Converter
- 4-Cell Battery
Si7501DN
Vishay Siliconix
Document Number: 72173
S-32419--Rev. B, 24-Nov-03
www.vishay.com
1
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
I
D
(A)
P-Channel
-30
0.051 @ V
GS
= -10 V
-6.4
P-Channel
-30
0.075 @ V
GS
= -6 V
-5.3
N Channel
30
0.035 @ V
GS
= 10 V
7.7
N-Channel
30
0.050 @ V
GS
= 4.5 V
6.5
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
G
2
S
2
S
1
G
1
D
Ordering Information: Si7501DN-T1--E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
P-Channel
N-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
30
V
Gate-Source Voltage
V
GS
"25
"20
V
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 25_C
I
D
-6.4
-4.5
7.7
5.4
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 70_C
I
D
-5.1
-3.6
4.7
4.3
A
Pulsed Drain Current
I
DM
-25
25
A
Continuous Source Current (Diode Conduction)
a
I
S
-2.6
-1.3
2.6
1.3
Maximum Power Dissipation
a
T
A
= 25_C
P
D
3.1
1.6
3.1
1.6
W
Maximum Power Dissipation
a
T
A
= 70_C
P
D
3
1.0
2
1.0
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t
a
t v 10 sec
R
32
40
Maximum Junction-to-Ambient
a
Steady State
R
thJA
65
81
_C/W
Maximum Junction-to-Foot (Case)
Steady State
R
thJC
5
6.3
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si7501DN
Vishay Siliconix
www.vishay.com
2
Document Number: 72173
S-32419--Rev. B, 24-Nov-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 mA
P-Ch
-1.0
-3
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
N-Ch
1.0
3
V
Gate Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "25 V
P-Ch
"200
nA
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
N-Ch
"100
nA
V
DS
= -30 V, V
GS
= 0 V
P-Ch
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
N-Ch
1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55_C
P-Ch
-5
mA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
N-Ch
5
On State Drain Current
a
I
D( )
V
DS
w -5 V, V
GS
= -10 V
P-Ch
-25
A
On-State Drain Current
a
I
D(on)
V
DS
p 5 V, V
GS
= 10 V
N-Ch
25
A
V
GS
= -10 V, I
D
= -6.4 A
P-Ch
0.041
0.051
Drain Source On State Resistance
a
r
DS( )
V
GS
= 10 V, I
D
= 7.7 A
N-Ch
0.028
0.035
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -6 V, I
D
= -5.3 A
P-Ch
0.055
0.075
W
V
GS
= 4.5 V, I
D
= 6.5 A
N-Ch
0.040
0.050
Forward Transconductance
a
g
f
V
DS
= -15 V, I
D
= -6.4 A
P-Ch
13
S
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 7.7 A
N-Ch
15
S
Diode Forward Voltage
a
V
SD
I
S
= -1.7 A, V
GS
= 0 V
P-Ch
-0.80
-1.2
V
Diode Forward Voltage
a
V
SD
I
S
= 1.7 A, V
GS
= 0 V
N-Ch
0.80
1.2
V
Dynamic
b
Total Gate Charge
Q
g
P-Ch
12.5
19
Total Gate Charge
Q
g
P-Channel
N-Ch
9
14
Gate Source Charge
Q
P-Channel
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -6.4 A
P-Ch
2.5
nC
Gate-Source Charge
Q
gs
N-Channel
V
15 V
V 10 V I 7 7 A
N-Ch
2
nC
Gate Drain Charge
Q
d
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 7.7 A
P-Ch
3.6
Gate-Drain Charge
Q
gd
N-Ch
1.3
Gate Resistance
R
P-Ch
9
W
Gate Resistance
R
g
N-Ch
3
W
Turn On Delay Time
t
d( )
P-Ch
10
15
Turn-On Delay Time
t
d(on)
N-Ch
10
15
Rise Time
t
P-Channel
V
DD
= -15 V, R
L
= 5 W
P-Ch
20
30
Rise Time
t
r
V
DD
= -15 V, R
L
= 5 W
I
D
^ -3 A, V
GEN
= -10 V, R
G
= 1 W
N-Ch
15
25
Turn Off Delay Time
t
d( ff)
N-Channel
V 15 V R 5 W
P-Ch
25
40
ns
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 5 W
I
D
^ 3 A, V
GEN
= 10 V, R
G
= 1 W
N-Ch
20
30
ns
Fall Time
t
f
I
D
^ 3 A, V
GEN
= 10 V, R
G
= 1 W
P-Ch
30
45
Fall Time
t
f
N-Ch
10
15
Source-Drain
t
I
F
= -1.7 A, di/dt = 100 A/ms
P-Ch
25
50
Source-Drain
Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ms
N-Ch
20
40
Notes
a.
Pulse test; pulse width v
300 ms, duty cycle v
2%.
b.
Guaranteed by design, not subject to production testing.
Si7501DN
Vishay Siliconix
Document Number: 72173
S-32419--Rev. B, 24-Nov-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
0
5
10
15
20
25
0
1
2
3
4
5
6
0
5
10
15
20
25
0
1
2
3
4
5
V
GS
= 10 thru 6 V
T
C
= -55_C
125_C
4 V
25_C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
5 V
3 V
-
On-Resistance (
r
DS(on)
W
)
0
200
400
600
800
1000
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
3
6
9
12
15
0.00
0.04
0.08
0.12
0.16
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 6.4 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
= 6.4 A
V
GS
= 10 V
V
GS
= 6 V
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
Si7501DN
Vishay Siliconix
www.vishay.com
4
Document Number: 72173
S-32419--Rev. B, 24-Nov-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.04
0.08
0.12
0.16
0
2
4
6
8
10
T
J
= 150_C
I
D
= 6.4 A
30
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
T
J
= 25_C
0
30
50
10
20
Power (W)
Single Pulse Power
Time (sec)
40
-0.4
-0.2
0.0
0.2
0.4
0.6
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
1
100
600
10
10
-1
10
-2
10
-3
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
T
A
= 25_C
Single Pulse
-
Drain Current (A)
I
D
P(t) = 10
dc
0.1
I
DM
Limited
I
D(on)
Limited
r
DS(on)
Limited
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
Si7501DN
Vishay Siliconix
Document Number: 72173
S-32419--Rev. B, 24-Nov-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
10
-3
10
-2
1
10
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
1
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
Si7501DN
Vishay Siliconix
www.vishay.com
6
Document Number: 72173
S-32419--Rev. B, 24-Nov-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
0
5
10
15
20
25
30
0
1
2
3
4
5
6
0
5
10
15
20
25
30
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
C
= 125_C
-55_C
4 V
25_C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
3 V
-
On-Resistance (
r
DS(on)
W
)
0
200
400
600
800
0
5
10
15
20
25
30
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
2
4
6
8
10
0.00
0.02
0.04
0.06
0.08
0.10
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 7.7 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
= 7.7 A
V
GS
= 10 V
V
GS
= 4.5 V
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
Si7501DN
Vishay Siliconix
Document Number: 72173
S-32419--Rev. B, 24-Nov-03
www.vishay.com
7
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.04
0.08
0.12
0.16
0
2
4
6
8
10
T
J
= 150_C
I
D
= 7.7 A
30
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
T
J
= 25_C
0
30
50
10
20
Power (W)
Single Pulse Power
Time (sec)
40
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
1
100
600
10
10
-1
10
-2
10
-3
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
T
A
= 25_C
Single Pulse
-
Drain Current (A)
I
D
P(t) = 10
dc
0.1
I
DM
Limited
I
D(on)
Limited
r
DS(on)
Limited
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
Si7501DN
Vishay Siliconix
www.vishay.com
8
Document Number: 72173
S-32419--Rev. B, 24-Nov-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
10
-3
10
-2
1
10
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=65_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
1
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
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