FEATURES
D
TrenchFET
r
Power MOSFETS
APPLICATIONS
D
Load Switch
D
Battery Switch
Si6911DQ
Vishay Siliconix
New Product
Document Number: 72231
S-31064--Rev. A, 26-May-03
www.vishay.com
1
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
0.026 @ V
GS
= -4.5 V
-5.1
-12
0.035 @ V
GS
= -2.5 V
-4.5
0.046 @ V
GS
= -1.8 V
-3.9
D
1
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
2
S
2
S
2
G
2
TSSOP-8
Top View
D
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Ordering Information: Si6911DQ T-1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-12
V
Gate-Source Voltage
V
GS
"
8
V
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
-5.1
-4.3
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
-4.1
-3.5
A
Pulsed Drain Current (10
m
s Pulse Width)
I
DM
-30
A
Continuous Source Current (Diode Conduction)
a
I
S
-1.0
-0.7
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
1.14
0.83
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
0.73
0.53
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t
a
t
v
10 sec
R
86
110
Maximum Junction-to-Ambient
a
Steady State
R
thJA
124
150
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
59
75
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si6911DQ
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72231
S-31064--Rev. A, 26-May-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -300
m
A
-0.4
-0.9
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
8 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -9.6 V, V
GS
= 0 V
-1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -9.6 V, V
GS
= 0 V, T
J
= 70
_
C
-25
m
A
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -4.5 V
-20
A
V
GS
= -4.5 V, I
D
= -5.1 A
0.021
0.026
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -4.5
A
0.028
0.035
W
DS(on)
V
GS
= -1.8 V, I
D
= -3.9
A
0.037
0.046
W
Forward Transconductance
a
g
fs
V
DS
= -5 V, I
D
= -5.1 A
20
S
Diode Forward Voltage
a
V
SD
I
S
= -1.0 A, V
GS
= 0 V
-0.65
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
16
24
Gate-Source Charge
Q
gs
V
DS
= -6 V,
V
GS
= -4.5 V, I
D
= -5.1 A
1.9
nC
Gate-Drain Charge
Q
gd
3.9
Turn-On Delay Time
t
d(on)
35
55
Rise Time
t
r
V
DD
= -6 V, R
L
= 6
W
62
100
Turn-Off Delay Time
t
d(off)
V
DD
= -6 V, R
L
= 6
W
I
D
^
-1 A, V
GEN
= -4.5 V, R
G
= 6
W
120
180
ns
Fall Time
t
f
70
110
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.0 A, di/dt = 100 A/
m
s
65
100
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
0
6
12
18
24
30
0
1
2
3
4
5
V
GS
= 5 thru 2.5 V
T
C
= -55
_
C
125
_
C
25
_
C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
2 V
1.5 V
Si6911DQ
Vishay Siliconix
New Product
Document Number: 72231
S-31064--Rev. A, 26-May-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
500
1000
1500
2000
2500
0
2
4
6
8
10
12
-
On-Resistance (
r
DS(on)
W
)
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
0
4
8
12
16
20
0.00
0.02
0.04
0.06
0.08
0.10
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
C
rss
V
DS
= 6 V
I
D
= 5.1 A
I
D
- Drain Current (A)
V
GS
= 4.5 V
I
D
= 5.1 A
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (
_
C)
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.00
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
T
J
= 25
_
C
I
D
= 5.1 A
40
10
0.2
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
V
GS
= 4.5 V
T
J
= 150
_
C
V
GS
= 2.5 V
V
GS
= 1.8 V
C
oss
C
iss
1
Si6911DQ
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72231
S-31064--Rev. A, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
80
160
40
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
120
10
-3
10
-2
1
10
600
10
-1
10
-4
100
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 300
m
A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (
_
C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 124
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
0.1
10
1
0.01
0.001
200
Safe Operating Area, Junction-to-Case
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
-
Drain Current (A)
I
D
0.1
Limited
by r
DS(on)
10 s
1 s
1 ms
10 ms
100 ms
dc
T
C
= 25
_
C
Single Pulse
Si6911DQ
Vishay Siliconix
New Product
Document Number: 72231
S-31064--Rev. A, 26-May-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
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