FEATURES
D
TrenchFET
r
Power MOSFETS
D
New Low Thermal Resistance PowerPAK
r
Package with Low 1.07-mm Profile
APPLICATIONS
D
Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
Si7459DP
Vishay Siliconix
New Product
Document Number: 72631
S-32678--Rev. A, 29-Dec-03
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
-30
0.0068 @ V
GS
= -10 V
-22
D
S
G
P-Channel MOSFET
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information: Si7459DP-T1 - E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
"
25
V
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
-22
-13
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
-17
-10
A
Pulsed Drain Current
I
DM
-60
A
continuous Source Current (Diode Conduction)
a
I
S
-4.5
-1.6
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
5.4
1.9
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
3.4
1.2
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
a
t
v
10 sec
R
18
23
Maximum Junction-to-Ambient
a
Steady State
R
thJA
52
65
_
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.5
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si7459DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72631
S-32678--Rev. A, 29-Dec-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
m
A
-1.0
-3.0
V
Gate Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20
V
"
100
nA
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
25
V
"
200
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V
-1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V, T
J
= 70
_
C
-10
m
A
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -10 V
-30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -22 A
0.0056
0.0068
W
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -22 A
50
S
Diode Forward Voltage
a
V
SD
I
S
= -2.9 A, V
GS
= 0 V
-0.71
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
113
170
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -22 A
17
nC
Gate-Drain Charge
Q
gd
32.5
Turn-On Delay Time
t
d(on)
25
40
Rise Time
t
r
V
DD
= -15 V, R
L
= 15
W
20
30
ns
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15
W
I
D
^
-1 A, V
GEN
= -10 V, R
G
= 6
W
180
270
ns
Fall Time
t
f
130
200
Gate Resistance
R
g
4
W
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.9 A, di/dt = 100 A/
m
s
100
150
ns
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 10 thru 5 V
25
_
C
T
C
= 125
_
C
-55
_
C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
3 V
4 V
Si7459DP
Vishay Siliconix
New Product
Document Number: 72631
S-32678--Rev. A, 29-Dec-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.000
0.004
0.008
0.012
0.016
0.020
0
2
4
6
8
10
0.000
0.002
0.004
0.006
0.008
0.010
0
10
20
30
40
50
0
2
4
6
8
10
0
20
40
60
80
100
120
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
2000
4000
6000
8000
10000
0
6
12
18
24
30
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 22 A
V
GS
= 10 V
I
D
= 22 A
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
-
On-Resistance (
r
DS(on)
W
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (
_
C)
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
1.0
1.2
0.1
10
100
0.00
0.2
0.4
0.6
0.8
T
J
= 25
_
C
T
J
= 150
_
C
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
I
D
= 22 A
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
GS
- Gate-to-Source Voltage (V)
V
GS
= 10 V
1
Si7459DP
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72631
S-32678--Rev. A, 29-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.4
-0.2
0.0
0.2
0.4
0.6
-50
-25
0
25
50
75
100
125
150
I
D
= 250
m
A
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (
_
C)
0
120
200
40
80
Power (W)
Single Pulse Power
Time (sec)
160
10
-3
10
-2
1
10
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 52
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
1
10
0.1
0.01
0.001
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
T
C
= 25
_
C
Single Pulse
-
Drain Current (A)
I
D
0.1
Limited by
r
DS(on)
dc
1 ms
10 ms
100 ms
1 s
10 s
Si7459DP
Vishay Siliconix
New Product
Document Number: 72631
S-32678--Rev. A, 29-Dec-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
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