FEATURES
D TrenchFETr Power MOSFET
D 100% R
g
Tested
D UIS Tested
APPLICATIONS
D CCFL Inverter
Si4565DY
Vishay Siliconix
New Product
Document Number: 73224
S-50033--Rev. A, 17-Jan-05
www.vishay.com
1
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
Q
g
(Typ)
N-Channel
40
0.040 @ V
GS
= 10 V
5.2
8
N-Channel
40
0.045 @ V
GS
= 4.5 V
4.9
8
P Channel
40
0.054 @ V
GS
= -10 V
-4.5
9
P-Channel
-40
0.072 @ V
GS
= -4.5 V
-3.9
9
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4565DY--E3
Si4565DY-T1--E3 (with Tape and Reel)
S
2
G
2
D
2
P-Channel MOSFET
N-Channel MOSFET
G
1
D
1
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
40
-40
V
Gate-Source Voltage
V
GS
"12
"16
V
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 25_C
I
D
5.2
3.9
-4.5
-3.3
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 70_C
I
D
4.2
3.1
-3.6
-2.7
Pulsed Drain Current
I
DM
30
A
Continuous Source Current (Diode Conduction)
a
I
S
1.7
0.9
-1.7
-0.9
A
Avalanche Current
L = 0 1 mH
I
AS
13
16
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
8.5
13
mJ
Maximum Power Dissipatio
a
T
A
= 25_C
P
D
2.0
1.1
2
1.1
W
Maximum Power Dissipatio
a
T
A
= 70_C
P
D
1.3
0.7
1.3
0.7
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction to Ambient
a
t v 10 sec
R
52
62.5
50
62.5
Maximum Junction-to-Ambient
a
Steady State
R
thJA
90
110
85
110
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
32
40
30
40
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si4565DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73224
S-50033--Rev. A, 17-Jan-05
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
N-Ch
0.6
1.6
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 mA
P-Ch
-0.8
-2.2
V
V
DS
Temperature Coefficient
DV
DS/Tj
N-Ch
40
V
DS
Temperature Coefficient
DV
DS/Tj
I
D
= 250 mA
P-Ch
-40
mV/_C
V
GS(th)
Temperature Coefficient
DV
GS(th)/Tj
I
D
= 250 mA
N-Ch
-3.8
mV/_C
V
GS(th)
Temperature Coefficient
DV
GS(th)/Tj
P-Ch
3.4
Gate Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "12 V
N-Ch
"100
nA
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "16 V
P-Ch
"100
nA
V
DS
= 40 V, V
GS
= 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -40 V, V
GS
= 0 V
P-Ch
-1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55_C
N-Ch
10
mA
V
DS
= -40 V, V
GS
= 0 V, T
J
= 55_C
P-Ch
-10
On State Drain Current
a
I
D( )
V
DS
w 5 V, V
GS
= 10 V
N-Ch
20
A
On-State Drain Current
a
I
D(on)
V
DS
p -5 V, V
GS
= -10 V
P-Ch
-20
A
V
GS
= 10 V, I
D
= 5.2 A
N-Ch
0.033
0.040
Drain Source On State Resistance
a
r
DS( )
V
GS
= -10 V, I
D
= -4.5 A
P-Ch
0.045
0.054
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 4.9 A
N-Ch
0.037
0.045
W
V
GS
= -4.5 V, I
D
= -3.9 A
P-Ch
0.059
0.072
Forward Transconductance
a
g
f
V
DS
= 15 V, I
D
= 5.2 A
N-Ch
18
S
Forward Transconductance
a
g
fs
V
DS
= -15 V, I
D
= -4.5 A
P-Ch
13
S
Diode Forward Voltage
a
V
SD
I
S
= 1.7 A, V
GS
= 0 V
N-Ch
0.75
1.2
V
Diode Forward Voltage
a
V
SD
I
S
= -1.7 A, V
GS
= 0 V
P-Ch
-0.79
-1.2
V
Dynamic
b
Input Capacitance
C
iss
N-Channel
N-Ch
700
Input Capacitance
C
iss
N-Channel
V
DS
= 20 V,
V
GS
= 0 V, f = 1 MHz
P-Ch
805
Output Capacitance
C
V
DS
= 20 V,
V
GS
= 0 V, f = 1 MHz
P Channel
N-Ch
76
pF
Output Capacitance
C
oss
P-Channel
V
DS
= -20 V
V
GS
= 0 V f = 1 MHz
P-Ch
120
pF
Reverse Transfer Capacitance
C
V
DS
= -20 V,
V
GS
= 0 V, f = 1 MHz
N-Ch
45
Reverse Transfer Capacitance
C
rss
P-Ch
85
Total Gate Charge
Q
g
N-Channel
N-Ch
8
12
Total Gate Charge
Q
g
N-Channel
V
DS
= 20 V,
V
GS
= 4.5 V, I
D
= 5.2 A
P-Ch
9
14
Gate Source Charge
Q
V
DS
= 20 V,
V
GS
= 4.5 V, I
D
= 5.2 A
P Channel
N-Ch
1.5
nC
Gate-Source Charge
Q
gs
P-Channel
V
DS
= -20 V
V
GS
= -4 5 V I
D
= -4 5 A
P-Ch
2
nC
Gate Drain Charge
Q
d
V
DS
= -20 V,
V
GS
= -4.5 V, I
D
= -4.5 A
N-Ch
2.4
Gate-Drain Charge
Q
gd
P-Ch
3.6
Gate Resistance
R
N-Ch
0.9
1.9
2.9
W
Gate Resistance
R
g
P-Ch
5
11.5
18
W
Turn On Delay Time
t
d( )
N-Ch
7
11
Turn-On Delay Time
t
d(on)
N-Channel
P-Ch
8
13
Rise Time
t
N-Channel
V
DD
= 15 V, R
L
= 15 W
I
1 A V
10 V R 6 W
N-Ch
11
17
Rise Time
t
r
V
DD
15 V, R
L
15 W
I
D
^ 1 A, V
GEN
= 10 V, R
g
= 6 W
P-Ch
12
18
ns
Turn Off Delay Time
t
d( ff)
g
P-Channel
N-Ch
27
40
ns
Turn-Off Delay Time
t
d(off)
P-Channel
V
DD
= -15 V, R
L
= 15 W
I
1 A V
10 V R 6 W
P-Ch
74
110
Fall Time
t
f
DD
,
L
I
D
^ -1 A, V
GEN
= -10 V, R
g
= 6 W
N-Ch
8
13
Fall Time
t
f
P-Ch
38
60
Source-Drain
t
I
F
= 1.7 A, di/dt = 100 A/ms
N-Ch
25
40
ns
Source-Drain
Reverse Recovery Time
t
rr
I
F
= -1.7 A, di/dt = 100 A/ms
P-Ch
27
45
ns
Body Diode
Q
I
F
= 1.7 A, di/dt = 100 A/ms
N-Ch
17
26
nC
Body Diode
Reverse Recovery Charge
Q
rr
I
F
= -1.7 A, di/dt = 100 A/ms
P-Ch
17
26
nC
Notes
a.
Pulse test; pulse width v
300 ms, duty cycle v
2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Si4565DY
Vishay Siliconix
New Product
Document Number: 73224
S-50033--Rev. A, 17-Jan-05
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
0
200
400
600
800
1000
1200
0
5
10
15
20
25
30
35
40
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
0
1
2
3
4
5
V
GS
= 10 thru 3 V
T
C
= 125_C
-55_C
25_C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
2 V
-
On-Resistance (
r
DS(on)
W
)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10 11
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
I
D
= 5.2 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
= 5.2 A
V
GS
= 10 V
V
GS
= 4.5 V
Gate Charge
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
C
oss
C
iss
On-Resistance vs. Drain Current
r
DS
(
on)
-
On-Resistance
(Normalized)
C
rss
V
DS
= 10 V
V
DS
= 20 V
Si4565DY
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 73224
S-50033--Rev. A, 17-Jan-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
0.01
0
1
80
100
40
60
10
0.1
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
20
0.001
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.04
0.08
0.12
0.16
0.20
0
2
4
6
8
10
T
J
= 150_C
T
J
= 25_C
I
D
= 5.2 A
20
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
Safe Operating Area, Junction-to-Foot
100
1
0.1
1
10
100
0.01
10
100 ms
-
Drain Current (A)
I
D
0.1
*Limited by r
DS(on)
T
C
= 25_C
Single Pulse
1 s
10 s
dc
10 ms
V
DS
- Drain-to-Source Voltage (V)
*V
GS
u minimum V
GS
at which r
DS(on)
is
specified
T
A
= 125_C
T
A
= 25_C
1 ms
Si4565DY
Vishay Siliconix
New Product
Document Number: 73224
S-50033--Rev. A, 17-Jan-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
2
1
0.1
0.01
10
-3
10
-2
1
10
600
10
-1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4
8
12
16
20
0
1
2
3
4
5
V
GS
= 10 thru 4 V
T
C
= -55_C
125_C
25_C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
3 V
Si4565DY
Vishay Siliconix
New Product
www.vishay.com
6
Document Number: 73224
S-50033--Rev. A, 17-Jan-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
-
On-Resistance (
r
DS(on)
W
)
0
124
248
372
496
620
744
868
992
1116
1240
0
5
10
15
20
25
30
35
40
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
0
2
4
6
8
10
12
0.00
0.02
0.04
0.06
0.08
0.10
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
C
oss
C
iss
I
D
= 4.5 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
= 4.5 A
V
GS
= 4.5 V
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0
2
4
6
8
10
T
J
= 150_C
I
D
= 4.5 A
20
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
T
J
= 25_C
C
rss
V
GS
= 10 V
r
DS
(
on)
-
On-Resistance
(Normalized)
V
DS
= 10 V
V
DS
= 20 V
T
A
= 25_C
T
A
= 125_C
Si4565DY
Vishay Siliconix
New Product
Document Number: 73224
S-50033--Rev. A, 17-Jan-05
www.vishay.com
7
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
-0.4
-0.2
0.0
0.2
0.4
0.6
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
Safe Operating Area, Junction-to-Ambient
100
1
0.1
1
10
100
0.01
10
T
A
= 25_C
Single Pulse
-
Drain Current (A)
I
D
0.1
I
DM
Limited
I
D(on)
Limited
*r
DS(on)
Limited
BV
DSS
Limited
V
DS
- Drain-to-Source Voltage (V)
*V
GS
u minimum V
GS
at which r
DS(on)
is
specified
100 ms
1 s
10 s
dc
10 ms
1 ms
0
30
50
10
20
Power (W)
Single Pulse Power
Time (sec)
1
600
10
40
0.1
0.001
100
0.01
10
-3
10
-2
1
10
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Si4565DY
Vishay Siliconix
New Product
www.vishay.com
8
Document Number: 73224
S-50033--Rev. A, 17-Jan-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73224
.
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