VISHAY
BA979/BA979S
Document Number 85533
Rev. 1.4, 26-Apr-04
Vishay Semiconductors
www.vishay.com
1
9612009
RF PIN Diodes
Features
Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable
attenuators
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80)
Weight: approx. 34 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Thermal Characteristics
T
amb
= 25 C, unless otherwise specified
Part
Type differentiation
Ordering code
Remarks
BA979
V
R
= 30 V, Z
r
> 5 k
BA979-GS18 or BA979-GS08
Tape and Reel
BA979S
V
R
= 30 V, Z
r
> 9 k
BA979S-GS18 or BA979S-GS08
Tape and Reel
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
30
V
Forward current
I
F
50
mA
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
on PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500
K/W
Junction temperature
T
j
125
C
Storage temperature range
T
stg
- 55 to + 125
C
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2
Document Number 85533
Rev. 1.4, 26-Apr-04
VISHAY
BA979/BA979S
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Typical Characteristics
(T
amb
= 25
C unless otherwise specified)
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 20 mA
V
F
1
V
Reverse current
V
R
= 30 V
I
R
50
nA
Diode capacitance
f = 100 MHz, V
R
= 0
C
D
0.5
pF
Differential forward resistance
f = 100 MHz, I
F
= 1.5 mA
r
f
50
Reverse impedance
f = 100 MHz, V
R
= 0
BA979
z
r
5
k
BA979S
z
r
9
k
Minority carrier lifetime
I
F
= 10 mA, I
R
= 10 mA
4
s
Fig. 1 Forward Current vs. Forward Voltage
Fig. 2 Differential Forward Resistance vs. Forward Current
0
0.4
0.8
1.2
1.6
0.01
0.1
1
10
100
2.0
95 9735
I
-
Forward
Current
(
m
A
)
F
V
F
- Forward Voltage ( V )
T
amb
= 25
C
Scattering Limit
0.001
0.01
0.1
1
1
10
100
1000
10000
10
95 9734
I
F
- Forward Current ( mA )
f > 20 MHz
T
j
= 25 C
r
-
Differential
Forward
Resistance
(
)
f
i
Fig. 3 Typ. Cross Modulation Distortion vs. Frequency f
2
-80
-60
-40
-20
0
20
a
-
Typical
Cross
Modulation
Distortion
(
d
B
)
f
2
, modulated with 200 kHz, m = 100% (MHz)
80
60
40
20
0
95 9733
- Circuit with 10 dB Attenuation
V
0
= 40 dBmV
f
1
= 100 MHz unmodulated
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4
Document Number 85533
Rev. 1.4, 26-Apr-04
VISHAY
BA979/BA979S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Legal Disclaimer Notice
Vishay
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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