BAR63V-02V
Document Number 85642
Rev. 1.5, 29-Jun-05
Vishay Semiconductors
www.vishay.com
1
16863
1
2
1
2
RF PIN Diode - Single in SOD-523
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-02V was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1
while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
Features
Low forward resistance
Space saving SOD-523 package with
low series inductance
Very small reverse capacitance
Lead (Pb)-free component
Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile, wireless and TV-Applications
Mechanical Data
Case: SOD-523 Plastic case
Weight: approx. 1.6 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Thermal Characteristics
T
amb
= 25 C, unless otherwise specified
Part
Ordering code
Marking
Remarks
BAR63V-02V
BAR63V-02V-GS18 or BAR63V-02V-GS08
C
Tape and Reel
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
50
V
Forward current
I
F
100
mA
Junction temperature
T
j
150
C
Storage temperature range
T
stg
- 55 to + 150
C
Parameter
Test condition
Symbol
Value
Unit
Junction soldering point
R
thJS
100
K/W
e3
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2
Document Number 85642
Rev. 1.5, 29-Jun-05
BAR63V-02V
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Reverse voltage
I
R
= 10
A
V
R
50
V
Reverse current
V
R
= 35 V
I
R
10
nA
Forward voltage
I
F
= 100 mA
V
F
1.2
V
Diode capacitance
f = 1 MHz, V
R
= 0
C
D
0.28
pF
f = 1 MHz, V
R
= 5 V
C
D
0.23
0.3
pF
Forward resistance
f = 100 MHz, I
F
= 1 mA
r
f
2.0
f = 100 MHz, I
F
= 5 mA
r
f
1.1
2.0
f = 100 MHz, I
F
= 10 mA
r
f
0.9
Charge carrier life time
I
F
= 10 mA, I
R
= 6 mA, i
R
= 3 mA
t
rr
115
ns
Figure 1. Forward Resistance vs. Forward Current
Figure 2. Diode Capacitance vs. Reverse Voltage
0
1
2
3
4
5
6
0.1
1.0
10
100
18341_1
f = 100 MHz
r
-
F
orw
ard
Resistance
(
)
f
I
F
- Forward Current ( mA )
W
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0
4
8
12
16
20
24
28
18333
V
R
- Reverse V oltage (V)
C
-
Diode
Capacitance
(
p
F
)
D
f = 1 MHz
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Reverse Voltage vs. Reverse Current
0.01
0.10
1.00
10.00
100.00
0.5
0.6
0.7
0.8
0.9
1.0
I
-
Forward
Current
(
m
A
)
V
F
- Forward Voltage ( V )
18325
F
0
20
40
60
80
100
120
0.01
0.1
1.0
10
100
1000
V
-
Reverse
V
oltag
e(V)
I
R
- Reverse Current (
A )
18329
R
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Document Number 85642
Rev. 1.5, 29-Jun-05
BAR63V-02V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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