BF966S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (8)
Document Number 85004
NChannel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially UHF-tuners.
Features
D
Integrated gate protection diodes
D
High cross modulation performance
D
Low noise figure
D
High AGC-range
D
Low feedback capacitance
D
Low input capacitance
1
4
3
2
94 9307
96 12647
BF966S Marking: BF966S
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
G
2
G
1
D
S
12623
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Value
Unit
Drain - source voltage
V
DS
20
V
Drain current
I
D
30
mA
Gate 1/Gate 2 - source peak current
I
G1/G2SM
10
mA
Total power dissipation
T
amb
60
C
P
tot
200
mW
Channel temperature
T
Ch
150
C
Storage temperature range
T
stg
55 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35
m
m Cu
R
thChA
450
K/W
BF966S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
2 (8)
Document Number 85004
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Drain - source
breakdown voltage
I
D
= 10
m
A, V
G1S
= V
G2S
= 4 V
V
(BR)DS
20
V
Gate 1 - source
breakdown voltage
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
V
(BR)G1SS
8
14
V
Gate 2 - source
breakdown voltage
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
V
(BR)G2SS
8
14
V
Gate 1 - source
leakage current
V
G1S
= 5 V, V
G2S
= V
DS
= 0
I
G1SS
50
nA
Gate 2 - source
leakage current
V
G2S
= 5 V, V
G1S
= V
DS
= 0
I
G2SS
50
nA
Drain current
V
DS
= 15 V, V
G1S
= 0, V
G2S
= 4 V
BF966S
I
DSS
4
18
mA
DS
G1S
G2S
BF966SA
I
DSS
4
10.5
mA
BF966SB
I
DSS
9.5
18
mA
Gate 1 - source
cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V, I
D
= 20
m
A
V
G1S(OFF)
2.5
V
Gate 2 - source
cut-off voltage
V
DS
= 15 V, V
G1S
= 0, I
D
= 20
m
A
V
G2S(OFF)
2.0
V
Electrical AC Characteristics
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward transadmittance
y
21s
15
18.5
mS
Gate 1 input capacitance
C
issg1
2.2
2.6
pF
Gate 2 input capacitance
V
G1S
= 0, V
G2S
= 4 V
C
issg2
1.1
pF
Feedback capacitance
C
rss
25
35
fF
Output capacitance
C
oss
0.8
1.2
pF
Power gain
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
ps
25
dB
g
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
G
ps
18
dB
AGC range
V
G2S
= 4 to 2 V, f = 800 MHz
D
G
ps
40
dB
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
F
1.0
dB
g
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
F
1.8
dB
BF966S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (8)
Document Number 85004
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
T
amb
Ambient Temperature (
C )
96 12159
P
T
otal Power Dissipation ( mW
)
tot
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
4
8
12
16
20
24
28
32
36
0
2
4
6
8
10
12
14
16
V
DS
Drain Source Voltage ( V )
12762
I Drain Current ( mA
)
D
V
G1S
= 2V
1.5V
1V
0V
0.5V
1V
0.5V
V
G2S
= 4V
Figure 2. Drain Current vs. Drain Source Voltage
0
10
20
30
40
50
60
70
80
90
100
1
0
1
2
3
4
5
V
G1S
Gate 1 Source Voltage ( V )
12763
I Drain Current ( mA
)
D
V
G2S
= 6V
5V
4V
0V
2V
1V
3V
V
DS
= 15V
1V
Figure 3. Drain Current vs. Gate 1 Source Voltage
0
10
20
30
40
50
60
70
80
1
0
1
2
3
4
5
V
G2S
Gate 2 Source Voltage ( V )
12764
I Drain Current ( mA
)
D
0V
2V
1V
3V
V
DS
= 15V
1V
V
G1S
= 4V
Figure 4. Drain Current vs. Gate 2 Source Voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
3
6
9
12 15 18 21 24 27 30
I
D
Drain Current ( mA )
12765
C Gate 1 Input Capacitance ( pF )
issg1
V
DS
=15V
V
G2S
=4V
f=1MHz
Figure 5. Gate 1 Input Capacitance vs. Drain Current
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
2
4
6
8
10 12 14 16 18 20
V
DS
Drain Source Voltage ( V )
12766
C Output Capacitance ( pF )
oss
V
G2S
=4V
I
D
=10mA
f=1MHz
Figure 6. Output Capacitance vs. Drain Source Voltage
BF966S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
4 (8)
Document Number 85004
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
3
2
1
0
1
2
3
4
5
6
V
G2S
Gate 2 Source Voltage ( V )
12767
C Gate 2 Input Capacitance ( pF )
issg2
V
DS
=15V
V
G1S
=0
f=1MHz
Figure 7. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
70
60
50
40
30
20
10
0
10
5
4
3
2
1
0
1
2
3
V
G1S
Gate 1 Source Voltage ( V )
12768
S
T
ransducer
Gain
(
dB
)
2
21
4V
0V
2V
1V
3V
f= 200MHz
0.5V
V
G2S
=2...3V
1V
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
0
2
4
6
8
10
12
14
16
18
20
22
24
0
5
10
15
20
25
30
I
D
Drain Current ( mA )
12769
Y
Forward
T
ransadmittance ( mS )
21S
V
DS
=15V
f=1MHz
V
G2S
=4V
2V
3V
1V
0.5V
0V
Figure 9. Forward Transadmittance vs. Drain Current
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10 12 14 16 18 20
Re (y
11
) ( mS )
12770
Im ( y ) ( mS )
11
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
f=1300MHz
700MHz
400MHz
1000MHz
100MHz
I
D
=5mA
I
D
=10mA
I
D
=20mA
Figure 10. Short Circuit Input Admittance
0.1
0.0
0.1
0.2
0.3
0
0.1
0.2
0.3
0.4
0.5
Re (y
12
) ( mS )
12772
Im ( y ) ( mS )
12
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
f=1300MHz
700MHz
I
D
=5mA
10mA
20mA
1000MHz
Figure 11. Short Circuit Reverse Transfer Admittance
40
35
30
25
20
15
10
5
0
5
8
4
0
4
8
12
16
20
24
Re (y
21
) ( mS )
12771
Im ( y ) ( mS )
21
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
f=100MHz
1300MHz
1000MHz
400MHz
700MHz
I
D
=5mA
10mA
20mA
Figure 12. Short Circuit Forward Transfer Admittance
BF966S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
5 (8)
Document Number 85004
0
1
2
3
4
5
6
7
8
0
0.5
1.0
1.5
2.0
2.5
Re (y
22
) ( mS )
12773
Im ( y ) ( mS )
22
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
f=1300MHz
1000MHz
400MHz
100MHz
I
D
=5mA
20mA
700MHz
I
D
=10mA
Figure 13. Short Circuit Output Admittance
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